Method for Treating a Semiconductor Wafer
US-2015371858-A1 · Dec 24, 2015 · US
US10283783B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10283783-B2 |
| Application number | US-201515521644-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 21, 2015 |
| Priority date | Oct 30, 2014 |
| Publication date | May 7, 2019 |
| Grant date | May 7, 2019 |
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
What the patent document calls the invention.
A short plain-language summary of the technical disclosure.
Who owns or filed the patent and who is credited as inventor.
Filing, priority, publication, and grant dates set the timeline.
The legal scope of protection — read this for what is actually claimed.
Technology tags used to group this patent with similar filings.
Prior art links and similar publications in this corpus.
Official abstract text for this publication.
A method including a deposition step comprising depositing a layer of graphene oxide; a deposition step including selectively exposing a region of the deposited graphene oxide layer to electromagnetic radiation to form a region of reduced graphene oxide adjacent to a neighboring region of unexposed graphene oxide, the graphene oxide and adjacent reduced graphene oxide regions forming a junction therebetween to produce a graphene oxide-reduced graphene oxide junction layer; and repeating the deposition and exposure steps for one or more further respective layers of graphene oxide, over an underlying graphene oxide-reduced graphene oxide junction layer, to produce an apparatus in which the respective junctions of the graphene oxide-reduced graphene oxide layers, when considered together, extend in the third dimension.
Opening claim text (preview).
The invention claimed is: 1. A method comprising: a deposition step comprising depositing a layer of graphene oxide; an exposure step comprising selectively exposing a region of the deposited graphene oxide layer to electromagnetic radiation to form a region of reduced graphene oxide adjacent to a neighbouring region of unexposed graphene oxide, the graphene oxide and adjacent reduced graphene oxide regions forming a junction therebetween to produce a graphene oxide-reduced graphene oxide junction layer; and repeating the deposition and exposure steps for one or more further respective layers of graphene oxide, over an underlying graphene oxide-reduced graphene oxide junction layer, to produce an apparatus in which the respective junctions of the graphene oxide-reduced graphene oxide layers, when considered together, extend in the third dimension. 2. The method of claim 1 , wherein the deposition and exposure steps are repeated to provide one or more junctions in the respective layers which overlie a junction in the underlying graphene oxide-reduced graphene oxide junction layer. 3. The method of claim 1 , wherein the deposition and exposure steps are repeated to provide one or more junctions in the respective layers which are interconnected with a junction in the underlying graphene oxide-reduced graphene oxide junction layer to produce a continuous junction in three dimensions. 4. The method of claim 1 , wherein selectively exposing the region of the deposited graphene oxide layer to electromagnetic radiation comprises: forming a mask layer comprising a transmission-allowing region and an adjacent transmission-preventing region, the transmission-allowing region configured to allow transmission of the electromagnetic radiation therethrough, the adjacent transmission-preventing region configured to prevent transmission of the electromagnetic radiation therethrough; and exposing the layer of graphene oxide to the electromagnetic radiation through the transmission-allowing region of the mask layer to form a corresponding region of reduced graphene oxide and a neighbouring region of unexposed graphene oxide. 5. The method of claim 4 , wherein forming the mask layer comprises depositing one or more discrete transmission-preventing regions to leave adjacent regions clear to form the adjacent transmission-allowing region. 6. The method of claim 4 , wherein forming the mask layer comprises depositing a continuous sheet comprising one or more transmission-allowing regions and one or more adjoining transmission-preventing regions. 7. The method of claim 4 , wherein forming the mask layer comprises depositing an electromagnetic radiation-blocking material above or below a region of the graphene oxide layer which is not to be exposed to the electromagnetic radiation. 8. The method of claim 7 , wherein the electromagnetic radiation-blocking material is deposited on a transparent substrate below the graphene oxide layer, and wherein the graphene oxide layer is exposed to the electromagnetic radiation transmitted through the transparent substrate in the transmission-allowing region of the mask layer. 9. The method of claim 7 , wherein the electromagnetic radiation-blocking material comprises an electrically conducting material which doubles as a charge collector for one or both of the graphene oxide and reduced graphene oxide regions. 10. The method of claim 9 , wherein the electromagnetic radiation-blocking material further comprises an electrically insulating material configured to prevent electrical contact between the electrically conducting material and the reduced graphene oxide region of the same layer or a subsequent layer. 11. The method of claim 1 , wherein selectively exposing the region of the deposited graphene oxide layer to the electromagnetic radiation comprises directing a beam of electromagnetic radiation onto a predetermined region of the layer of graphene oxide such that only the predetermined region is exposed to the electromagnetic radiation. 12. The method of claim 1 , wherein selectively exposing the region of the deposited graphene oxide layer to the electromagnetic radiation comprises controlling the intensity of the electromagnetic radiation to control the thickness of the region of reduced graphene oxide and the junction between the graphene oxide and reduced graphene oxide regions. 13. The method of claim 1 , wherein selectively exposing the region of the deposited graphene oxide layer to the electromagnetic radiation comprises exposing the region to a laser beam. 14. The method of claim 1 , wherein selectively exposing the region of the deposited graphene oxide layer to the electromagnetic radiation comprises exposing the region to a xenon flash light. 15. An apparatus comprising a plurality of overlying graphene oxide-reduced graphene oxide junction layers, each graphene oxide-reduced graphene oxide junction layer comprising a region of reduced graphene oxide adjacent to a neighbouring region of graphene oxide, wherein the graphene oxide and adjacent reduced graphene oxide regions of each layer form a junction therebetween, and wherein the plurality of graphene oxide-reduced graphene oxide junction layers overlie one another such that the respective junctions of the layers, when considered together, extend in the third dimension. 16. A computer program comprising computer code configured to perform the method of claim 1 .
with high-energy radiation · CPC title
Carbonaceous material, e.g. graphite-intercalation compounds or CFx · CPC title
activated through external addition of electrolyte or of electrolyte components · CPC title
by screen printing · CPC title
Electricity · mapped topic
Related publications grouped by family.
Answers are generated from the same data shown on this page.