Solar cell with reduced absorber thickness and reduced back surface recombination

Patent metadata

Field	Value
Publication number	US-10283653-B2
Application number	US-201715448705-A
Country	US
Kind code	B2
Filing date	Mar 3, 2017
Priority date	Oct 12, 2012
Publication date	May 7, 2019
Grant date	May 7, 2019

Abstract

A stacked-layered thin film solar cell. The solar cell has reduced absorber thickness and an improved back contact for Copper Indium Gallium Selenide solar cells. The back contact provides improved reflectance particularly for infrared wavelengths while still maintaining ohmic contact to the semiconductor absorber. This reflectance is achieved by producing a back contact having a highly reflecting metal separated from an absorbing layer with a dielectric layer.

First claim

We claim:

1. A thin-film solar cell comprising:
a stacked-layered light-absorbing structure, the structure comprising:
a conducting material deposited on a substrate and in direct physical contact with the substrate;
a reflecting element deposited on the conducting material and in direct physical contact with the conducting material;
a dielectric deposited on the reflecting element and in direct physical contact with the reflecting element;
a semiconducting material deposited on the dielectric and in direct physical contact with the dielectric, wherein the semiconducting material fills at least one aperture formed within the reflecting element and the dielectric, and wherein a second surface of the conducting material extends across a bottom surface of the aperture;
a first transparent material deposited on the semiconducting material and in direct physical contact with the semiconducting material; and
a second transparent material deposited on the first transparent material and in direct physical contact with the first transparent material, wherein the second transparent material is a conducting material.

2. The solar cell of claim 1 , wherein the aperture establishes electrical contact between the conducting material and the semiconducting material.

3. The solar cell of claim 2 , wherein the aperture establishes ohmic contact between the conducting material and the semiconducting material.

4. The solar cell of claim 1 , wherein the second transparent material is comprised of Zinc Oxide doped with Aluminum.

5. The solar cell of claim 1 , wherein the second transparent material collects current from absorbed radiation.

6. The solar cell of claim 1 , further comprising placement of the stacked-layered light-absorbing structure in communication with a contact grid to collect electrical current.

Assignees

• IBM

Inventors

• Eickelmann Hans-Juergen
• Haag Michael
• Kellmann Ruediger
• Schmidt Markus
• Windeln Johannes

Classifications

• H01L31/0749

  Electricity · mapped topic

• H01L31/02168 Primary

  Electricity · mapped topic

• H01L31/022425

  Electricity · mapped topic

• H01L31/186

  Electricity · mapped topic

• H01L31/022483

  Electricity · mapped topic