Thin film transistor, method for manufacturing the same, and display device including the same

Patent metadata

Field	Value
Publication number	US-10283531-B2
Application number	US-201715660803-A
Country	US
Kind code	B2
Filing date	Jul 26, 2017
Priority date	Jul 29, 2016
Publication date	May 7, 2019
Grant date	May 7, 2019

Abstract

Disclosed is a thin film transistor including both an N-type semiconductor layer and a P-type semiconductor layer, a method for manufacturing the same, and a display device including the same, wherein the thin film transistor may include a first gate electrode on a substrate; a first gate insulating film covering the first gate electrode; a semiconductor layer on the first gate insulating film; a second gate insulating film covering the semiconductor layer; and a second gate electrode on the second gate insulating film, wherein the semiconductor layer includes the N-type semiconductor layer and the P-type semiconductor layer.

First claim

What is claimed is:

1. A thin film transistor comprising:
a first gate electrode disposed on a substrate;
a first gate insulating film covering the first gate electrode;
a semiconductor layer disposed on the first gate insulating film;
a second gate insulating film covering the semiconductor layer;
a second gate electrode disposed on the second gate insulating film, the second gate electrode non-overlapping with the first gate electrode,
a drain electrode on the semiconductor layer, the drain electrode including a first drain electrode portion at a first end of the drain electrode and a second drain electrode portion at a second end of the drain electrode that is opposite the first end;
wherein the semiconductor layer includes an N-type semiconductor portion and a P-type semiconductor portion on the N-type semiconductor portion, and the P-type semiconductor portion is in contact with the N-type semiconductor portion,
wherein a first overlapping area is between the first gate electrode and the first drain electrode portion and the N-type semiconductor portion such that the first gate electrode overlaps and is below the N-type semiconductor portion and the P-type semiconductor portion, wherein the N-type semiconductor portion in the first overlapping area is a first channel area, and
wherein a second overlapping area is between the second gate electrode and the second drain electrode portion and the P-type semiconductor portion where the second gate electrode overlaps and is above the P-type semiconductor portion and the N-type semiconductor portion, wherein the P-type semiconductor portion in the second overlapping area is a second channel area.

2. The thin film transistor according to claim 1 , wherein a thickness of the P-type semiconductor portion is less than half of a thickness of the N-type semiconductor portion.

3. The thin film transistor according to claim 1 , wherein a first portion of the semiconductor layer is overlapped with the first gate electrode, and wherein a second portion of the semiconductor layer is overlapped with the second gate electrode.

4. The thin film transistor according to claim 1 , further comprising:
a light shielding layer formed of a same material as the first gate electrode, the light shielding layer overlapping the second channel area and in a same layer of the thin film transistor as the first gate electrode.

5. The thin film transistor according to claim 1 , further comprising:
a plurality of source electrodes on the semiconductor layer, the plurality of source electrodes including a first source electrode and a second source electrode; and
wherein the first drain electrode portion and the second drain electrode portion are between the first source electrode and the second source electrode.

6. The thin film transistor according to claim 5 , wherein the first source electrode and the first drain electrode portion are overlapped with the first gate electrode, and wherein the second source electrode and the second drain electrode portion are overlapped with the second gate electrode.

7. The thin film transistor according to claim 6 , wherein at least one of the first drain electrode portion and the second drain electrode portion and the plurality of source electrodes includes a metal material having a work function of 5.0 eV.

8. The thin film transistor according to claim 5 , further comprising:
a connection electrode on the semiconductor layer, the connection electrode connecting together the first drain electrode portion and the second drain electrode portion.

9. The thin film transistor according to claim 1 , further comprising:
an insulating interlayer covering the second gate electrode; and
a plurality of source electrodes on the insulating interlayer, the plurality of source electrodes including a first source electrode and a second source electrode; and
wherein the first drain electrode portion and the second drain electrode portion are on the insulating interlayer,
wherein each of the first drain electrode portion, the second drain electrode portion, and the plurality of source electrodes is connected to the semiconductor layer through a corresponding contact hole that penetrates through the insulating interlayer and the second gate insulating film.

10. The thin film transistor according to claim 9 , wherein at least one of the first drain electrode portion, the second drain electrode portion, and the plurality of source electrodes includes a metal material having a work function of 5.0 eV.

11. The thin film transistor according to claim 9 , wherein the first source electrode and the first drain electrode portion are overlapped with the first gate electrode, and wherein the second gate electrode is horizontally between the second source electrode and the second drain electrode portion.

12. The thin film transistor according to claim 9 , further comprising: a connection electrode on the insulating interlayer, the connection electrode connecting together the first drain electrode portion and the second drain electrode portion.

13. The thin film transistor according to claim 1 , wherein the N-type semiconductor portion is an N-type oxide semiconductor portion, and the P-type semiconductor portion is a P-type oxide semiconductor portion.

14. The thin film transistor according to claim 13 , wherein the P-type semiconductor portion is formed of copper oxide (Cu 2 O).

15. A method for manufacturing a thin film transistor comprising:
providing a first gate electrode on a substrate;
providing a first gate insulating film that covers the first gate electrode;
providing a semiconductor layer including an N-type semiconductor portion and a P-type semiconductor portion on the N-type semiconductor portion on the first gate insulating film, the P-type semiconductor portion is in contact with the N-type semiconductor portion;
providing a drain electrode on the semiconductor layer, the drain electrode including a first drain electrode portion at a first end of the drain electrode and a second drain electrode portion at a second end of the drain electrode that is opposite the first end;
providing a second gate insulating film that covers the semiconductor layer and the drain electrode; and
providing a second gate electrode on the second gate insulating film, the second gate electrode non-overlapping with the first gate electrode,
wherein a first overlapping area is between the first gate electrode and the first drain electrode portion and the N-type semiconductor portion such that the first gate electrode overlaps and is below the N-type semiconductor portion and the P-type semiconductor portion, wherein the N-type semiconductor portion in the first overlapping area is a first channel area, and
wherein a second overlapping area is between the second gate electrode and the second drain electrode portion and the P-type semiconductor portion where the second gate electrode overlaps and is above the P-type semiconductor portion and the N-type semiconductor portion, wherein the P-type semiconductor portion in the second overlapping area is a second channel area.

16. The method according to claim 15 , wherein a first portion of the semiconductor layer is overlapped with the first gate electrode and wherein a second portion of the semiconductor layer is overlapped with the second gate electrode.

17. The method according to claim 15 , wherein providing the semiconductor layer includes:
providing the N-type semiconductor portion on the first gate insulating film; and
providing the P-type semiconductor portion on the N-type semicondu

Assignees

• Lg Display Co Ltd

Inventors

• Bae Junhyeon
• Bae Jonguk

Classifications

• H01L29/7869

  Electricity · mapped topic

• H01L29/78696

  Electricity · mapped topic

• H01L29/41733

  Electricity · mapped topic

• H01L29/1054

  Electricity · mapped topic

• H01L29/78633

  Electricity · mapped topic