Silicon-on-insulator substrate including trap-rich layer and methods for making thereof
US-2024297070-A1 · Sep 5, 2024 · US
US10283350B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10283350-B2 |
| Application number | US-201815976028-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 10, 2018 |
| Priority date | Jun 1, 2012 |
| Publication date | May 7, 2019 |
| Grant date | May 7, 2019 |
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Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided a precursor of Formula I: wherein R 1 is selected from linear or branched C 3 to C 10 alkyl group, linear or branched C 3 to C 10 alkenyl group, linear or branched C 3 to C 10 alkynyl group, C 1 to C 6 dialkylamino group, electron withdrawing group, and C 6 to C 10 aryl group; R 2 is selected from hydrogen, linear or branched C 1 to C 10 alkyl group, linear or branched C 3 to C 6 alkenyl group, linear or branched C 3 to C 6 alkynyl group, C 1 to C 6 dialkylamino group, C 6 to C 10 aryl group, linear or branched C 1 to C 6 fluorinated alkyl group, electron withdrawing group, and C 4 to C 10 aryl group; optionally wherein R 1 and R 2 are linked together to form ring selected from substituted or unsubstituted aromatic ring or substituted or unsubstituted aliphatic ring; and n=1 or 2.
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The invention claimed is: 1. A composition comprising greater than 99.5% by weight pure organoaminodisilane wherein the organoaminodisilane is made by a process comprising reacting disilane with a secondary amine with Formula II: in the presence of a catalyst, wherein R 1 and R 2 are each independently selected from the group consisting of isopropyl, isobutyl, sec-butyl, tert-butyl, pentyl, iso-pentyl, tert-pentyl, hexyl, iso-hexyl, and neo-hexyl, provided that both R 1 and R 2 are not di-iso-propyl, or R 1 and R 2 may be linked to form a ring. 2. The composition of claim 1 wherein R 1 and R 2 are linked to form a ring selected from the group consisting of a. pyrrolidino wherein R 1 =propyl and R 2 =Me, b. piperidino wherein R 1 =propyl and R 2 =Et, c. 2,6-dimethylpiperidino wherein R 1 =iso-propyl and R 2 =sec-butyl, and d. 2,5-dimethylpyrrolidino wherein R 1 =R 2 =iso-propyl. 3. The composition of claim 2 wherein R 1 and R 2 are linked to form a pyrrolidino moiety. 4. The composition of claim 2 wherein R 1 and R 2 are linked to form a piperidino moiety. 5. The composition of claim 2 wherein R 1 and R 2 are linked to form a 2, 6-dimethylpiperidino moiety. 6. The composition of claim 2 wherein R 1 and R 2 are linked to form a 2, 5-dimethylpyrrolidino moiety. 7. The composition of claim 1 wherein at least one of R 1 and R 2 is isobutyl. 8. The composition of claim 1 wherein at least one of R 1 and R 2 is sec-butyl. 9. The composition of claim 1 wherein at least one of R 1 and R 2 is tert-butyl. 10. The composition of claim 1 wherein at least one of R 1 and R 2 is pentyl. 11. The composition of claim 1 wherein at least one of R 1 and R 2 is iso-pentyl. 12. The composition of claim 1 wherein at least one of R 1 and R 2 is tert-pentyl. 13. The composition of claim 1 wherein at least one of R 1 and R 2 is hexyl. 14. The composition of claim 1 wherein at least one of R 1 and R 2 is neo-pentyl.
the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz · CPC title
the material being a silicon oxide, e.g. SiO2 · CPC title
the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC · CPC title
being a silicon carbide or silicon carbonitride and not containing oxygen, e.g. SiC or SiC:H · CPC title
the compound comprising silicon and nitrogen · CPC title
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