Multilayer ceramic capacitor and method for producing the same

US10283272B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10283272-B2
Application numberUS-201615163950-A
CountryUS
Kind codeB2
Filing dateMay 25, 2016
Priority dateJun 5, 2015
Publication dateMay 7, 2019
Grant dateMay 7, 2019

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  1. Title

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  2. Abstract

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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Abstract

Official abstract text for this publication.

A multilayer ceramic capacitor having inner electrodes containing at least one metal selected from Cu, Ag, Pd, Pt, Rh, Ir, Ru, and Os in an amount of 0.1 atom % or more that is dissolved in Ni and Sn to form a solid solution. The percentage of Sn with respect to the total amount of Ni and Sn in near-surface regions each located at a depth of 2 nm from a surface of the inner electrode in contact with an adjacent ceramic dielectric layer is 1.4 or more atom %, and X−Y≥1.0, where X represents the atomic percentage of Sn in the near-surface regions and Y represents the atomic percentage of Sn in mid-thickness regions of the inner electrodes. A method for producing a multilayer ceramic capacitor includes annealing the ceramic multilayer body to increase, in the inner electrodes, the percentage of Sn in the near-surface regions.

First claim

Opening claim text (preview).

What is claimed is: 1. A multilayer ceramic capacitor comprising: a ceramic multilayer body including a stack of a plurality of ceramic dielectric layers and a plurality of inner electrodes arranged opposing each other with a respective ceramic dielectric layer of the plurality of ceramic dielectric layers interposed therebetween; and outer electrodes disposed on an outer surface of the ceramic multilayer body, each outer electrode being in electrical connection with a respective set of inner electrodes of the plurality of inner electrodes, the inner electrodes including a Ni—Sn-Metal A alloy, wherein the Metal A is at least one metal selected from the group consisting of Cu, Ag, Pd, Pt, Rh, Ir, Ru, and Os in an amount of 0.1 atom % or more, a percentage of Sn with respect to a total amount of Ni and Sn in near-surface regions of the plurality of inner electrodes is 1.4 or more atom %, each of the near-surface regions being a region at a depth of within 2 nm from a surface in contact with an adjacent one of the respective ceramic dielectric layers, and X−Y≥ 1.0 where X represents an atomic percentage of Sn in the near-surface regions and Y represents an atomic percentage of Sn in mid-thickness regions of the plurality of inner electrodes. 2. The multilayer ceramic capacitor according to claim 1 , wherein the plurality of inner electrodes have a thickness defined as T, and each of the mid-thickness regions is located 0.2T or more inward from each surface of the plurality of inner electrodes in a thickness direction thereof. 3. The multilayer ceramic capacitor according to claim 1 , wherein the Ni—Sn-Metal A alloy contains a solid solution of Ni, Sn and the Metal A. 4. The multilayer ceramic capacitor according to claim 1 , wherein the plurality of inner electrodes contain a co-material. 5. The multilayer ceramic capacitor according to claim 4 , wherein the co-material contains at least some constituent elements of a ceramic material of the ceramic dielectric layers.

Assignees

Inventors

Classifications

  • characterised by the ceramic dielectric material (H01G4/1272, H01G4/1281 take precedence) · CPC title

  • Fried electrodes · CPC title

  • H01G4/30Primary

    Stacked capacitors (H01G4/33 takes precedence) · CPC title

  • electrically connecting two or more layers of a stacked or rolled capacitor · CPC title

  • H01G4/306Primary

    made by thin film techniques · CPC title

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What does patent US10283272B2 cover?
A multilayer ceramic capacitor having inner electrodes containing at least one metal selected from Cu, Ag, Pd, Pt, Rh, Ir, Ru, and Os in an amount of 0.1 atom % or more that is dissolved in Ni and Sn to form a solid solution. The percentage of Sn with respect to the total amount of Ni and Sn in near-surface regions each located at a depth of 2 nm from a surface of the inner electrode in contact…
Who is the assignee on this patent?
Murata Manufacturing Co
What technology area does this patent fall under?
Primary CPC classification H01G4/30. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue May 07 2019 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).