Wavelength-tunable III-V/Si hybrid optical transmitter

Patent metadata

Field	Value
Publication number	US-10281746-B2
Application number	US-201816122571-A
Country	US
Kind code	B2
Filing date	Sep 5, 2018
Priority date	Nov 21, 2016
Publication date	May 7, 2019
Grant date	May 7, 2019

Abstract

An optical transmitter includes a reflective semiconductor optical amplifier (RSOA) coupled to an input end of a first optical waveguide. An end of the first optical waveguide provides a transmitter output for the optical transmitter. Moreover, a section of the first optical waveguide between the input end and the output end is optically coupled to a ring modulator that modulates an optical signal based on an electrical input signal. A passive ring filter (or a 1×N silicon-photonic switch and a bank of band reflectors) is connected to provide a mirror that reflects light received from the second optical waveguide back toward the RSOA to form a lasing cavity. Moreover, the ring modulator and the passive ring filter have different sizes, which causes a Vernier effect that provides a large wavelength tuning range for the lasing cavity in response to tuning the ring modulator and the passive ring filter.

First claim

What is claimed is:

1. An optical transmitter, comprising:
a reflective semiconductor optical amplifier (RSOA);
a ring modulator that modulates an optical signal based on an electrical input signal;
a first optical waveguide with an input end and an output end, wherein the input end is coupled to the RSOA, wherein the output end provides a transmitter output for the optical transmitter, and wherein a section of the first optical waveguide between the input end and the output end is optically coupled to the ring modulator;
an array of N narrow-band reflectors, wherein each narrow-band reflector has a different center wavelength;
a 1×N silicon-photonic switch, having an input port and N output ports, wherein each output port is coupled to a different narrow-band reflector in the array of N narrow-band reflectors;
a second optical waveguide with a first end optically coupled to the ring modulator and a second end coupled to the input port of the 1×N silicon-photonic switch; and
an adjustment mechanism that facilitates adjusting a frequency of the optical transmitter in discrete increments by selectively coupling the input port of the 1×N silicon-photonic switch to one of the N output ports, thereby causing the RSOA, the first optical waveguide, the ring modulator, the second optical waveguide and the 1×N silicon-photonic switch to form a lasing cavity with a narrow-band reflector coupled to the selected output port of the 1×N silicon-photonic switch, wherein the lasing cavity has a wavelength that is determined by the center wavelength of the selected narrow-band reflector.

2. The optical transmitter of claim 1 , wherein each narrow-band reflector in the array of N narrow-band reflectors comprises a distributed Bragg reflector (DBR), wherein each DBR in the array has a different pitch to achieve a different center wavelength.

3. The optical transmitter of claim 1 ,
wherein the lasing cavity includes a thermo-optic coefficient (TOC) compensator comprising a section of compensation material;
wherein the lasing cavity includes a length l Si through silicon, a length l C through the compensation material, and a length l OGM through the optical gain material;
wherein the effective refractive index of silicon is n Si , the effective refractive index of the compensation material is n C , and the effective refractive index of the optical gain material is n OGM ;
wherein the effective TOC of silicon is dn Si /dT, the effective TOC of the compensation material is dn C /dT, and the effective TOC of the optical gain material is dn OGM /dT; and
wherein l C ≈l OGM *(dn OGM /dT−dn Si /dT)/(dn Si /dT−dn C /dT), whereby the effective TOC of a portion of the lasing cavity that passes through the optical gain material and the compensation material is substantially the same as the TOC of silicon.

4. The optical transmitter of claim 1 , wherein the RSOA is located on a III-V gain chip, which is separate from a silicon-on-insulator (SOI) chip that includes the RSOA, the first and second optical waveguides, the ring modulator, the 1×N silicon-photonic switch, the array of N narrow-band reflectors and other components of the tunable laser.

5. The optical transmitter of claim 1 , wherein the ring modulator has a resonance aligned with a Fabry-Pérot cavity mode within a gain bandwidth of the RSOA.

6. The optical transmitter of claim 1 , wherein the ring modulator includes a thermal tuning mechanism.

Assignees

• Oracle Int Corp

Inventors

• Zheng Xuezhe
• Luo Ying
• Yao Jin
• Krishnamoorthy Ashok V

Classifications

• G02F2203/15

  involving resonance effects, e.g. resonantly enhanced interaction · CPC title

• H01S5/50

  Amplifier structures not provided for in groups H01S5/02 - H01S5/30 · CPC title

• H01S5/1071

  Ring-lasers · CPC title

• G02F1/011 Primary

  in optical waveguides, not otherwise provided for in this subclass · CPC title

• G02B6/2808

  using a mixing element which evenly distributes an input signal over a number of outputs · CPC title