Electrical device
US-2016336593-A1 · Nov 17, 2016 · US
US10276866B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10276866-B2 |
| Application number | US-201415537270-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 17, 2014 |
| Priority date | Dec 17, 2014 |
| Publication date | Apr 30, 2019 |
| Grant date | Apr 30, 2019 |
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In an electric device the negative electrode active material layer includes a silicide phase containing a silicide of a transition metal is dispersed in a parent phase containing amorphous or low crystalline silicon as a main component, a predetermined composition, and a ratio value (B/A) of a diffraction peak intensity B of a silicide of a transition metal in a range of 2θ=37 to 45° to a diffraction peak intensity A of a ( 111 ) plane of Si in a range of 2θ=24 to 33° in a predetermined range in an X-ray diffraction measurement using a CuKα1 ray is used as a Si-containing alloy. A solid solution or an oxide-coated solid solution in which a coating layer containing an oxide in a predetermined amount is formed on the particle surface of the solid solution and is used in the positive electrode active material layer.
Opening claim text (preview).
The invention claimed is: 1. An electric device which comprises a power generating element including: a positive electrode in which a positive electrode active material layer containing a positive electrode active material is formed on the surface of a positive electrode current collector; a negative electrode in which a negative electrode active material layer containing a negative electrode active material is formed on the surface of a negative electrode current collector; and a separator, wherein the negative electrode active material layer contains a negative electrode active material represented by the following Formula (1): α(Si-containing alloy) (1) wherein α represents a percent by weight of each component in the negative electrode active material layer and 40<α≤98, the positive electrode active material layer contains a positive electrode active material represented by the following Formula (2): e (Solid-solution positive electrode active material) (2) wherein e represents a percent by weight of each component in the positive electrode active material layer and 80≤e≤98, and wherein the Si-containing alloy has a structure including a silicide phase which contains a silicide of a transition metal and is dispersed in a parent phase containing amorphous silicon as a main component and a composition represented by the following Chemical Formula (I): Si x Sn y M z A a (I) wherein A is unavoidable impurities, M is Ti, x, y, z, and a represent values of percent by mass, and 0<x<100, 0<y<100, 0<z<100, and 0≤a<0.5 and x+y+z+a=100, a ratio value (B/A) of a diffraction peak intensity B of a silicide of a transition metal in a range of 2θ=37 to 45° to a diffraction peak intensity A of a ( 111 ) plane of Si in a range of 2θ=24 to 33° is 0.41 or more in an X-ray diffraction measurement of the Si-containing alloy using a CuKαl ray, and the solid-solution positive electrode active material contains an oxide-coated solid solution including a coating layer which contains an oxide or composite oxide of a metal selected from the group consisting of Al, Zr, and Ti and is formed on a particle surface of a solid solution having a composition represented by the following Formula (3): Li 1.5 [Ni a Mn b Co c [Li] d ]O z (3) wherein z represents the number of oxygen satisfying the valence, a+b+c+d=1.5, 0.1≤d≤0.4, and 1.1≤[a+b+c]≤1.4, and wherein a content of the oxide or composite oxide in the solid-solution positive electrode active material is from 0.1 to 3.0% by weight in terms of oxide. 2. The electric device according to claim 1 , wherein B/A is 0.89 or more. 3. The electric device according to claim 2 , wherein B/A is 2.55 or more. 4. The electric device according to claim 3 , wherein B/A is 7.07 or more. 5. The electric device according to claim 1 , wherein the diffraction peak intensity A (cps) of the ( 111 ) plane of Si is from 6000 to 25000 and the diffraction peak intensity B (cps) of a silicide of a transition metal is from 9000 to 46000. 6. The electric device according to claim 1 , wherein the diffraction peak intensity A (cps) of the ( 111 ) plane of Si is from 6000 to 15000 and the diffraction peak intensity B (cps) of a silicide of a transition metal is from 25000 to 46000. 7. The electric device according to claim 1 , wherein the parent phase is more amorphized than the silicide phase. 8. The electric device according to claim 1 , wherein a size of the silicide phase is 50 nm or less. 9. The electric device according to claim 1 , wherein 7<z <100 in Chemical Formula (I) above. 10. The electric device according to claim 1 , wherein a thickness of the coating layer is from 2 to 20 nm. 11. The electric device according to claim 1 , which is a lithium ion secondary battery.
Silicon or alloys based on silicon · CPC title
as layered products · CPC title
of mixed oxides or hydroxides containing iron, cobalt or nickel for inserting or intercalating light metals, e.g. LiNiO2, LiCoO2 or LiCoOxFy · CPC title
of mixed oxides or hydroxides containing manganese for inserting or intercalating light metals, e.g. LiMn2O4 or LiMn2OxFy · CPC title
of mixed oxides or hydroxides for inserting or intercalating light metals, e.g. LiTi2O4 or LiTi2OxFy (H01M4/505, H01M4/525 take precedence) · CPC title
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