Antennas in electronic devices
US-2018034134-A1 · Feb 1, 2018 · US
US10276763B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10276763-B2 |
| Application number | US-201715722903-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 2, 2017 |
| Priority date | Oct 4, 2016 |
| Publication date | Apr 30, 2019 |
| Grant date | Apr 30, 2019 |
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Official abstract text for this publication.
Light emitting devices (LEDs) are described herein. An LED includes a light emitting semiconductor structure, a wavelength converting material and an off state white material. The light emitting semiconductor structure includes a light-emitting active layer disposed between an n-layer and a p-layer. The wavelength converting material has a first surface adjacent the light emitting semiconductor structure and a second surface opposite the first surface. The off state white material is in direct contact with the second surface of the wavelength converting material and includes multiple core-shell particles disposed in an optically functional material. Each of the core-shell particles includes a core material encased in a polymer or inorganic shell. The core material includes a phase change material.
Opening claim text (preview).
What is claimed is: 1. A light emitting device (LED) comprising: a light emitting semiconductor structure comprising a light-emitting active layer disposed between an n-layer and a p-layer; a wavelength converting material having a first surface adjacent the light emitting semiconductor structure and a second surface opposite the first surface; and an off state white material in direct contact with the second surface of the wavelength converting material, the off state white material comprising a plurality of core-shell particles disposed in an optically functional material, each of the core shell particles comprising a core material that includes a phase change material encased in a polymer or inorganic shell. 2. The LED of claim 1 , wherein the phase change material is selected from the group consisting of a paraffin and a deuterated paraffin analog. 3. The LED of claim 1 , wherein the off state white material comprises between 5 percent and 40 percent by volume fraction of the core-shell p articles. 4. The LED of claim 1 , wherein the core material further comprises silicone in a ratio of 50% to 90% silicone to the phase change material by weight. 5. The LED of claim 1 , wherein the polymer or inorganic shell is one of melamine formaldehyde based or silica based. 6. The LED of claim 1 , wherein the shell is a polymer shell and is deuterated. 7. The LED of claim 1 , wherein the phase change material has a melting point of between 43° C. and 100° C. 8. The LED of claim 1 , wherein the phase change material is one of deuterated tricosane, deuterated docosane, deuterated hexacosane, and deuterated octacosane. 9. The LED of claim 1 , wherein the light emitting semiconductor structure is a blue light emitting semiconductor structure. 10. The LED of claim 9 , wherein the wavelength converting material comprises one of a yellow-emitting phosphor material or green-emitting and red-emitting phosphor materials. 11. The LED of claim 1 , wherein each of the plurality of particles has a diameter of between 1 μm and 50 μm. 12. The LED of claim 1 , wherein the optically functional material comprises silicone and the plurality of core-shell particles are dispersed in the silicone. 13. The LED of claim 1 , wherein the optically functional material comprises a temperature and light resistant matrix and the plurality of core-shell particles are embedded in the temperature and light resistant matrix. 14. The LED of claim 1 , wherein the off state white material is disposed on the wavelength converting material as a layer or a film. 15. The LED of claim 1 , wherein the optically functional material forms a lens.
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