Semiconductor device and method for manufacturing same

Patent metadata

Field	Value
Publication number	US-10276502-B2
Application number	US-201515555381-A
Country	US
Kind code	B2
Filing date	Nov 27, 2015
Priority date	Mar 27, 2015
Publication date	Apr 30, 2019
Grant date	Apr 30, 2019

Abstract

A method for manufacturing a semiconductor device includes: a process of forming a Cu wiring electrode by a plating method above a semiconductor element using a wide bandgap semiconductor as a base material; a reducing process of reducing the Cu wiring electrode under a NH 3 atmosphere; a heating process of heating the Cu wiring electrode at the same time as the reducing process; a process of forming a diffusion prevention film covering the Cu wiring electrode after the heating process; and a sealing process of covering the diffusion prevention film with an organic resin film.

First claim

The invention claimed is:

1. A method for manufacturing a semiconductor device comprising:
a process of forming a Cu wiring electrode having a thickness of 6 μm or more and 100 μm or less by a plating method above a semiconductor element using a wide bandgap semiconductor as a base material, said semiconductor element being operated at a temperature exceeding 200° C.;
a reducing process of reducing said Cu wiring electrode under a NH 3 atmosphere not containing oxygen;
a heating process of heating said Cu wiring electrode at the same time as said reducing process;
a process of forming a diffusion prevention film covering said Cu wiring electrode continuously after said heating process; and
a sealing process of covering said diffusion prevention film with an organic resin film.

2. A method for manufacturing a semiconductor device comprising:
a process of forming a Cu wiring electrode having a thickness of 6 μm or more and 100 μm or less by a plating method above a semiconductor element using a wide bandgap semiconductor as a base material, said semiconductor element being operated at a temperature exceeding 200° C.;
a reducing process of reducing said Cu wiring electrode under a NH 3 atmosphere not containing oxygen;
a heating process of heating said Cu wiring electrode under a vacuum atmosphere after said reducing process;
a process of forming a diffusion prevention film covering said Cu wiring electrode continuously after said heating process; and
a sealing process of covering said diffusion prevention film with an organic resin film.

3. A method for manufacturing a semiconductor device comprising:
a process of forming a Cu wiring electrode having a thickness of 6 μm or more and 100 μm or less by a plating method above a semiconductor element using a wide bandgap semiconductor as a base material, said semiconductor element being operated at a temperature exceeding 200° C.;
a reducing process of reducing said Cu wiring electrode under a H 2 atmosphere not containing oxygen;
a heating process of heating said Cu wiring electrode under a vacuum atmosphere after said reducing process;
a process of forming a diffusion prevention film covering said Cu wiring electrode continuously after said heating process; and
a sealing process of covering said diffusion prevention film with an organic resin film.

4. The method for manufacturing the semiconductor device according to claim 3 , wherein said Cu wiring electrode is heated to a temperature of 150° C. or more in said heating process.

5. The method for manufacturing the semiconductor device according to claim 3 , wherein said Cu wiring electrode is heated to a temperature of 300° C. or more in said heating process.

6. The method for manufacturing the semiconductor device according to claim 3 , wherein said Cu wiring electrode is exposed under said H 2 atmosphere for time of 15 seconds or more and 120 seconds or less in said reducing process.

7. The method for manufacturing the semiconductor device according to claim 3 , wherein said Cu wiring electrode is exposed under said H 2 atmosphere for time of 15 seconds or more and 45 seconds or less in said reducing process.

8. The method for manufacturing the semiconductor device according to claim 3 , further comprising:
a process of joining an insulating substrate below said semiconductor element;
a process of joining a cooler below said insulating substrate;
a process of joining a lead above said Cu wiring electrode; and
a process of sealing said semiconductor element, said Cu wiring electrode, said insulating substrate, and said lead with a sealing resin.

9. A semiconductor device comprising:
a Cu wiring electrode electrically connected to a semiconductor element using a wide bandgap semiconductor as a base material, said Cu wiring electrode formed above said semiconductor element and having a thickness of 6 μm or more and 100 μm or less, said semiconductor element being operated at a temperature exceeding 200° C.;
a diffusion prevention film covering said Cu wiring electrode; and
an organic resin film covering said diffusion prevention film; wherein
said Cu wiring electrode has more nitrogen atoms than oxygen atoms at an interface with said diffusion prevention film.

10. The semiconductor device according to claim 9 , wherein said diffusion prevention film is a nitride.

11. The semiconductor device according to claim 9 , wherein said diffusion prevention film is a silicon nitride.

12. The semiconductor device according to claim 9 , wherein said Cu wiring electrode has oxygen atoms having a surface density of 1×10 14 cm −2 or less.

13. The semiconductor device according to claim 9 , wherein said Cu wiring electrode has hydrogen atoms having a surface density of 1×10 15 cm −2 or less.

14. The method for manufacturing the semiconductor device according to claim 1 , wherein said Cu wiring electrode is heated to a temperature of 150° C. or more in said heating process.

15. The method for manufacturing the semiconductor device according to claim 1 , wherein said Cu wiring electrode is heated to a temperature of 300° C. or more in said heating process.

16. The method for manufacturing the semiconductor device according to claim 1 , wherein said Cu wiring electrode is exposed under said NH 3 atmosphere for time of 15 seconds or more and 120 seconds or less in said reducing process.

17. The method of manufacturing the semiconductor device according to claim 1 , wherein said Cu wiring electrode is exposed under said NH 3 atmosphere for time of 15 seconds or more and 45 seconds or less in said reducing process.

18. The method for manufacturing the semiconductor device according to claim 1 , further comprising:
a process of joining an insulating substrate below said semiconductor element;
a process of joining a cooler below said insulating substrate;
a process of joining a lead above said Cu wiring electrode; and
a process of sealing said semiconductor element, said Cu wiring electrode, said insulating substrate, and said lead with a sealing resin.

19. The method for manufacturing the semiconductor device according to claim 2 , wherein said Cu wiring electrode is heated to a temperature of 150° C. or more in said heating process.

20. The method for manufacturing the semiconductor device according to claim 2 , wherein said Cu wiring electrode is heated to a temperature of 300° C. or more in said heating process.

21. The method for manufacturing the semiconductor device according to claim 2 , wherein said Cu wiring electrode is exposed under said NH 3 atmosphere for time of 15 seconds or more and 120 second or less in said reducing process.

22. The method for manufacturing the semiconductor device according to claim 2 , wherein said Cu wiring electrode is exposed under said NH 3 atmosphere for time of 15 seconds or more and 45 seconds or less in said reducing process.

23. The method for manufacturing the semiconductor device according to claim 2 , further comprising:
a process of joining an insulating substrate below said semiconductor element;
a process of joining a cooler below said insulating substrate;
a process of joining a lead above said Cu wiring electrode; and
a process of sealing said semiconductor element, said Cu wiring electrode, said insulating substrate, and said lead with a sealing resin.

Assignees

• Mitsubishi Electric Corp

Inventors

• YOSHIDA Motoru
• Okabe Hiroaki
• Sugahara Kazuyuki

Classifications

• H10P50/71

  using masks for conductive or resistive materials · CPC title

• H10P14/40

  of conductive or resistive materials · CPC title

• H10D64/0123

  to silicon carbide · CPC title

• H10D64/011

  of electrodes ohmically coupled to a semiconductor · CPC title

• H10W90/734

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title