Plasma processing device

Patent metadata

Field	Value
Publication number	US-10276349-B2
Application number	US-201514699443-A
Country	US
Kind code	B2
Filing date	Apr 29, 2015
Priority date	Oct 13, 2014
Publication date	Apr 30, 2019
Grant date	Apr 30, 2019

Abstract

A plasma processing device is provided. The plasma processing device includes a plate formed between a window covering a top portion of a chamber where plasma processing is performed and an antenna generating a magnetic field, and a fluid supply unit supplying a fluid for controlling temperatures of the window and the antenna, wherein the plate includes first and second regions supplied with the fluid, and the fluid supply unit independently controls the first and second regions.

First claim

What is claimed is:

1. A plasma processing device comprising:
a plate between a window covering a top portion of a chamber where plasma processing is performed and an antenna generating a magnetic field, wherein the plate comprises a coupling groove that extends from an edge of the plate to a central portion of the plate and that exposes a top portion of the window, wherein the plate comprises first and second regions configured to receive a fluid, and wherein the edge of the plate contains a material having a thermal conductivity of less than 20 [W/m−k];
a gas feed configured to supply a processing gas different from the fluid to an inside of the chamber, wherein the as feed extends from the edge of the plate to the central portion of the plate, and the gas feed is engaged with the coupling groove, and
a fluid supply unit configured to supply the fluid to the first and second regions of the plate that controls a temperature of the window and the antenna, wherein the fluid supply unit is configured to independently control flow of the fluid in the first and second regions, and wherein a temperature of an edge of the window is controlled by the edge of the plate and a temperature of a center of the window is controlled by the fluid flowing through the first and second regions,
wherein the gas feed and the plate include the same material.

2. The plasma processing device of claim 1 , wherein the first region includes an inlet port through which the fluid flows in and an outlet port through which the fluid flows out.

3. The plasma processing device of claim 2 , wherein the first region comprises a fluid conduit having one end connected to the inlet port, and an opposite end connected to the outlet port.

4. The plasma processing device of claim 2 , further comprising:
an inlet pipe connecting the inlet port and the fluid supply unit; and
an outlet pipe connecting the outlet port and the fluid supply unit.

5. The plasma processing device of claim 1 , further comprising a clamp connecting the plate and the window.

6. The plasma processing device of claim 1 , wherein the fluid supply unit is configured to supply a first fluid that lowers temperatures of the window and the antenna and a second fluid that raises the temperature of the window.

7. The plasma processing device of claim 6 , further comprising a temperature sensor unit configured to sense the temperature of the window, wherein the fluid supply unit receives the temperature of the window from the temperature sensor unit.

8. The plasma processing device of claim 7 , wherein the fluid supply unit supplies one of the first and second fluids to the plate according to the temperature of the window.

9. The plasma processing device of claim 1 , wherein the coupling groove crosses a portion of the plate between the first and second regions.

10. A plasma processing device comprising:
a plate between a window covering a top portion of a chamber where plasma processing is performed and an antenna generating a magnetic field, wherein the plate comprises a coupling groove that extends from an edge of the plate to a central portion of the plate and that exposes a top portion of the window, wherein the edge of the plate contains a material having a thermal conductivity of less than 20 [W/m−k];
a gas feed configured to supply a processing gas different from a first fluid and a second fluid to an inside of the chamber, wherein the gas feed extends from the edge of the plate to the central portion of the plate, and the gas feed is engaged with the coupling groove;
a temperature sensor unit sensing a temperature of the window; and
a fluid supply unit configured to supply the first fluid that lowers the temperature of the window and the antenna and the second fluid that raises the temperature of the window and configured to receive the temperature of the window from the temperature sensor unit,
wherein the fluid supply unit supplies one of the first and second fluids to the plate according to the temperature of the window, and wherein a temperature of an edge of the window is controlled by the edge of the plate and a temperature of a center of the window is controlled by the fluid flowing through the plate, and
wherein the gas feed and the plate include the same material.

11. The plasma processing device of claim 10 , further comprising:
a clamp connecting the plate and the window and mounted at a lower portion of an edge of the plate; and
inlet and outlet pipes connecting the plate and the fluid supply unit.

12. The plasma processing device of claim 11 , wherein the window includes a slide groove, the clamp includes a slide protrusion engaged with the slide groove, and one end of each of the inlet and outlet pipes is fixed to a top surface of the plate.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Kim Hak-Young
• Lee Ji-Myoung
• Kim Ji-Hee
• Sung Doug-Yong
• Jeong Kyeong-Seok
• Choi Seong-Chul

Classifications

• H01J37/32119 Primary

  Windows · CPC title

• H01J37/3299

  Feedback systems · CPC title

• H01J37/32522

  Temperature · CPC title

• H01J37/321

  the radio frequency energy being inductively coupled to the plasma · CPC title

• H05H1/4652

  using inductive coupling means, e.g. coils · CPC title