Methods and apparatus for preparing power transmission cables

Patent metadata

Field	Value
Publication number	US-10276284-B2
Application number	US-201815899415-A
Country	US
Kind code	B2
Filing date	Feb 20, 2018
Priority date	Aug 30, 2011
Publication date	Apr 30, 2019
Grant date	Apr 30, 2019

Abstract

A method for preparing a polymer insulated cable including a semiconductive layer surrounding a polymeric insulation layer includes: cutting the semiconductive layer by grinding a circumferential dividing groove in the semiconductive layer using a rotating grinding surface, wherein the dividing groove defines first and second semiconductive sections of the semiconductive layer on opposed sides of the dividing groove; and thereafter removing the second semiconductive section from the polymeric insulation layer while retaining the first semiconductive section on the polymeric insulation layer.

First claim

That which is claimed is:

1. A method for preparing a polymer insulated cable including a semiconductive layer surrounding a polymeric insulation layer, and a cable jacket surrounding the semiconductive layer, the method comprising:
cutting away an end section of the cable jacket to expose the semiconductive layer; thereafter
cutting the semiconductive layer by grinding a circumferential dividing groove in the semiconductive layer using a rotating grinding surface, wherein the dividing groove defines first and second semiconductive sections of the semiconductive layer on opposed sides of the dividing groove; and thereafter
removing the second semiconductive section from the polymeric insulation layer while retaining the first semiconductive section on the polymeric insulation layer.

2. The method of claim 1 wherein the insulation layer is formed of ethylene propylene rubber (EPR).

3. The method of claim 1 including rotating the grinding surface circumferentially around the cable while rotating the grinding surface in contact with the semiconductive layer.

4. The method of claim 1 wherein the grinding surface is formed of tungsten carbide.

5. The method of claim 1 including rotating the grinding surface using a power driver.

6. The method of claim 5 including releasably coupling the power driver and the grinding surface to the cable using a mounting tool.

7. The method of claim 1 including:
cutting a circumferential preliminary groove in the semiconductive layer using the rotating grinding surface at an axial position along the cable, the preliminary groove having a first depth; and thereafter
cutting the dividing groove into the semiconductive layer within the preliminary groove at the axial position.

8. The method of claim 1 wherein the dividing groove extends fully through the semiconductive layer so that a segment of the polymeric insulation layer is exposed between the first and second semiconductive sections and through the dividing groove.

9. A method for preparing a polymer insulated cable including a semiconductive layer surrounding a polymeric insulation layer, the method comprising:
cutting a circumferential preliminary groove in the semiconductive layer using a rotating grinding surface at an axial position along the cable, the preliminary groove having a first depth; thereafter
cutting the semiconductive layer by grinding a circumferential dividing groove in the semiconductive layer within the preliminary groove at the axial position using the rotating grinding surface, wherein the dividing groove defines first and second semiconductive sections of the semiconductive layer on opposed sides of the dividing groove; and thereafter
removing the second semiconductive section from the polymeric insulation layer while retaining the first semiconductive section on the polymeric insulation layer.

10. A method for preparing a polymer insulated cable including a semiconductive layer surrounding a polymeric insulation layer, the method comprising:
cutting the semiconductive layer by grinding a circumferential dividing groove in the semiconductive layer using a rotating grinding surface, wherein the dividing groove defines first and second semiconductive sections of the semiconductive layer on opposed sides of the dividing groove; and thereafter
removing the second semiconductive section from the polymeric insulation layer while retaining the first semiconductive section on the polymeric insulation layer;
wherein the dividing groove extends fully through the semiconductive layer so that a segment of the polymeric insulation layer is exposed between the first and second semiconductive sections and through the dividing groove.

Assignees

• Tyco Electronics Raychem Gmbh
• Te Connectivity Corp

Inventors

• Kehl Ladislaus
• Frye Terry Edward

Classifications

• H01B1/24

  the conductive material comprising carbon-silicon compounds, carbon or silicon · CPC title

• B24B19/02

  for grinding grooves, e.g. on shafts, in casings, in tubes, homokinetic joint elements · CPC title

• H01B13/016 Primary

  for manufacturing co-axial cables (applying discontinuous insulation H01B13/20) · CPC title

• C09D5/24

  Electrically-conducting paints {(conductive materials H01B1/00)} · CPC title

• Y10T83/0385

  Rotary scoring blade · CPC title