Acid generator compounds and photoresists comprising same

US10274825B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10274825-B2
Application numberUS-201314027375-A
CountryUS
Kind codeB2
Filing dateSep 16, 2013
Priority dateSep 15, 2012
Publication dateApr 30, 2019
Grant dateApr 30, 2019

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  1. Title

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  2. Abstract

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  5. First independent claim

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Abstract

Official abstract text for this publication.

Acid generator compounds are provided that are particularly useful as a photoresist composition component. In one preferred aspect, cyclic sulfonium salt and photoresist compositions that comprise such compounds are provided. In another preferred aspect, acid generator compounds are provided that comprise one or more covalently linked acid-labile moieties, particularly ester-containing acid-labile moieties.

First claim

Opening claim text (preview).

What is claimed is: 1. A photoresist composition, comprising: (i) a polymer; and (ii) an acid generator that corresponds to the following Formula (I): wherein R 1 corresponds to the formula —(CH 2 ) n′ (C═O)O—ALG, n′ is a positive integer and ALG is a group that results in an acid labile moiety; A is a hydrogen or non-hydrogen substituent; e is an integer from 0 to 4; R 2 and R 3 are the same or different non-hydrogen substitutents, and R 2 and R 3 may be taken together to form an aromatic or non-aromatic ring; and Z is a counter anion. 2. The photoresist composition of claim 1 wherein the acid generator is covalently bonded to the polymer. 3. A method for providing a photoresist relief image, comprising: a) applying a coating layer of a photoresist composition of claim 1 on a substrate; and b) exposing the photoresist composition layer to activating radiation and developing the exposed photoresist composition coating layer. 4. The method of claim 3 wherein the photoresist composition layer is exposed to EUV or e-beam radiation. 5. The photoresist composition of claim 1 wherein the acid generator is not covalently linked to a polymer. 6. The photoresist composition of claim 1 wherein the cleavage product of the acid-labile moiety comprises a carboalicyclic or a heteroalicyclic group. 7. The photoresist composition of claim 6 wherein the cleavage product of the acid-labile moiety comprises an optionally substituted adamantyl group. 8. The photoresist composition of claim 6 wherein the cleavage product of the acid-labile moiety comprises an optionally substituted cyclopentyl, cyclohexyl, cycloheptyl or cyclooctyl group. 9. The photoresist composition of claim 1 wherein the cleavage product of the acid-labile moiety comprises an aromatic group. 10. A photoresist composition, comprising: (i) a polymer; and (ii) an acid generator that corresponds to the following Formula (II): wherein in Formula II R 1 corresponds to the formula —(CH 2 ) n′ (C═O)O—ALG, n′ is a positive integer and ALG is a group that results in an acid labile moiety; A, B and C are each independently a hydrogen or non-hydrogen substituent; D is a single bond; >C═O; >S(O); >S(O) 2 ; —C(═O)O—; —C(═O)NH—; —C(═O)—C(═O)—; —O—; CHOH; CH 2 ; or S; e, f and g are each independently an integer from 0 to 4; and Z − is a counter anion. 11. The photoresist composition of claim 10 , wherein D is a single bond. 12. The photoresist composition of claim 10 wherein the acid generator is not covalently linked to a polymer. 13. The photoresist composition of claim 10 wherein the cleavage product of the acid-labile moiety comprises an adamantyl group or aromatic group. 14. The photoresist of claim 10 wherein D is >C═O or —CH 2 —. 15. A photoresist composition, comprising: (i) a polymer; and (ii) an acid generator that corresponds to the following Formula (III): wherein R 1 1) provides an acid-labile moiety and 2) comprises an ester linkage; X and Y are independently hydrogen or a non-hydrogen substituent; A is a hydrogen or non-hydrogen substituent; R 2 and R 3 are the same or different non-hydrogen substitutents, and R 2 and R 3 may be taken together to form an aromatic or non-aromatic ring; n is a positive integer; e is an integer from 0 to 4; and Z − is a counter anion. 16. The photoresist composition of claim 15 wherein the acid generator is not covalently linked to a polymer. 17. The photoresist composition of claim 15 wherein the cleavage product of the acid-labile moiety comprises a carboalicyclic or a heteroalicyclic group. 18. The photoresist composition of claim 17 wherein the cleavage product of the acid-labile moiety comprises an optionally substituted adamantyl group. 19. The photoresist composition of claim 17 wherein the cleavage product of the acid-labile moiety comprises an optionally substituted cyclopentyl, cyclohexyl, cycloheptyl or cyclooctyl group. 20. The photoresist composition of claim 15 wherein R 1 corresponds to the formula —(CH 2 ) n′ (C═O)O—ALG, n′ is a whole number and ALG is a group that results in an acid labile moiety. 21. A photoresist composition, comprising: (i) a polymer; and (ii) an acid generator that corresponds to the following Formula (IV): wherein in Formula (IV) R 1 is a non-hydrogen substituent that provides an acid-labile moiety; X and Y are independently hydrogen or a non-hydrogen substituent; A, B and C are each independently a hydrogen or non-hydrogen substituent; D is a single bond; >C═O; >S(O); >S(O) 2 ; —C(═O)O—; —C(═O)NH—; —C(═O)—C(═O)—; —O—; —CH(OH)—; —CH 2 —; or —S—; n is a positive integer, e, f and g are the same or different integer from 0 to 4; and Z − is a counter anion. 22. The photoresist composition of claim 21 wherein the acid generator is not covalently linked to a polymer. 23. The photoresist composition of claim 21 wherein D is a single bond. 24. An acid generator that corresponds to the following Formula (I): wherein R 1 corresponds to the formula —(CH 2 ) n′ (C═O)O—ALG, n′ is a positive integer and ALG is a group that results in an acid labile moiety; A is a hydrogen or non-hydrogen substituent; e is an integer from 0 to 4; R 2 and R 3 are the same or different non-hydrogen substitutents, and R 2 and R 3 may be taken together to form an aromatic or non-aromatic ring; and Z is a counter anion. 25. A photoresist composition, comprising: (i) a polymer; and (ii) an acid generator that comprises a group selected from the following:

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Classifications

  • the macromolecular compound having an alicyclic moiety in a side chain · CPC title

  • the macromolecular compound being present in a chemically amplified positive photoresist composition · CPC title

  • Exposure; Apparatus therefor (photographic printing apparatus for making copies G03B27/00) · CPC title

  • with perfluoro compounds, e.g. for dry lithography (G03F7/0048 takes precedence) · CPC title

  • G03F7/0382Primary

    the macromolecular compound being present in a chemically amplified negative photoresist composition · CPC title

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What does patent US10274825B2 cover?
Acid generator compounds are provided that are particularly useful as a photoresist composition component. In one preferred aspect, cyclic sulfonium salt and photoresist compositions that comprise such compounds are provided. In another preferred aspect, acid generator compounds are provided that comprise one or more covalently linked acid-labile moieties, particularly ester-containing acid-lab…
Who is the assignee on this patent?
Rohm & Haas Elect Mat
What technology area does this patent fall under?
Primary CPC classification G03F7/0382. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Apr 30 2019 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).