Display having narrow bezel

Patent metadata

Field	Value
Publication number	US-10274796-B2
Application number	US-201715659898-A
Country	US
Kind code	B2
Filing date	Jul 26, 2017
Priority date	Jul 29, 2016
Publication date	Apr 30, 2019
Grant date	Apr 30, 2019

Abstract

The present disclosure relates to a display having a narrow bezel structure. A flat panel display includes a substrate including a display area and a non-display area; a pull-up thin film transistor including a first gate electrode, a first source electrode and a first drain electrode, disposed in the non-display area; and a boosting capacitor disposed between the first gate electrode and the first source electrode; wherein the boosting capacitor includes a light shielding layer connected to the first gate electrode and overlapping with the first source electrode, but not overlapping with the first drain electrode.

First claim

What is claimed is:

1. A flat panel display, comprising:
a substrate including a display area and a non-display area;
a pull-up thin film transistor including a first gate electrode, a first source electrode and a first drain electrode, disposed in the non-display area; and
a boosting capacitor disposed between the first gate electrode and the first source electrode;
wherein the boosting capacitor includes a light shielding layer connected to the first gate electrode and overlapping with the first source electrode, but not overlapping with the first drain electrode.

2. The device according to the claim 1 , further comprising:
a buffer layer covering the light shielding layer; and
a semiconductor layer including a channel area, a source area and a drain area,
wherein the channel area overlaps with the light shielding layer,
wherein the source area is extended from one side of the channel area and overlapped the light shielding layer,
wherein the drain area is not overlapped the light shielding layer,
wherein the first gate electrode is overlapped the channel layer with a gate insulating layer between the first gate electrode and the channel layer, and
wherein the boosting capacitor is formed at some portions of the buffer layer between the light shielding layer as a first capacitance electrode and the source area as a second capacitance electrode.

3. The device according to the claim 2 , further comprising:
an intermediate insulating layer covering the first gate electrode,
wherein the first drain electrode is connected to the drain area on the intermediate insulating layer, and
wherein the first source electrode is connected to the source area on the intermediate insulating layer.

4. The device according to the claim 1 , wherein the first gate electrode is connected to the light shielding layer via a gate contact hole penetrating the gate insulating layer and the buffer layer.

5. The device according to the claim 1 , further comprising:
a pull-down thin film transistor including a second gate electrode, a second source electrode and a second drain electrode, in the non-display area,
wherein the second drain electrode is connected to the first source electrode.

6. A display apparatus, comprising:
a substrate including a display area and a non-display area;
a light shielding layer on the substrate in the non-display area; and
a pull-up thin film transistor in the non-display area and including a semiconductor layer with a channel area, a source area, and a drain area, the source area overlapping with the light shielding layer without the drain area overlapping with the light shielding layer in plan view,
wherein the light shielding layer forms a first electrode of a boosting capacitor, and the source area of the semiconductor layer forms a second electrode of the boosting capacitor.

7. The display apparatus of claim 6 , wherein the pull-up thin film transistor further includes:
a first gate electrode overlapping with the channel area in plan view, a first source electrode electrically connected to the source area, and a first drain electrode electrically connected to the drain area.

8. The display apparatus of claim 7 , wherein the first source electrode overlaps with the light shielding layer without the first drain electrode overlapping with the light shielding layer in plan view.

9. The display apparatus of claim 7 , further comprising:
an intermediate insulating layer over the first gate electrode,
wherein the first drain electrode is over the intermediate insulating layer and is electrically connected to the drain area via a drain contact hole through the intermediate insulating layer, and
wherein the first source electrode is over the intermediate insulating layer and is electrically connected to the source area via a source contact hole through the intermediate insulating layer.

10. The device according to the claim 7 , further comprising:
a buffer layer between the light shielding layer and the semiconductor layer; and
a gate insulating layer between the semiconductor layer and the first gate electrode,
wherein the first gate electrode is electrically connected to the light shielding layer via a gate contact hole through the gate insulating layer and the buffer layer.

11. The display apparatus of claim 6 , wherein the channel area overlaps with the light shielding layer in plan view.

12. The display apparatus of claim 6 , further comprising:
a buffer layer between the light shielding layer and the semiconductor layer,
wherein the boosting capacitor is formed at a portion of the buffer layer between the light shielding layer as the first electrode of the boosting capacitor and the source area of the semiconductor layer as the second electrode of the boosting capacitor.

13. The display apparatus of claim 6 , further comprising:
a pull-down thin film transistor in the non-display area and including a second gate electrode, a second source electrode, and a second drain electrode,
wherein the second drain electrode is electrically connected to the first source electrode.

14. A display apparatus, comprising:
a substrate;
a light shielding layer over the substrate;
a semiconductor layer having a channel area, a source area, and a drain area, the source area covering the light shielding layer without the drain area covering the light shielding layer in plan view;
a first gate electrode over the channel area;
a first drain electrode electrically connected with the drain area; and
a first source electrode electrically connected with the source area,
wherein the first gate electrode, first drain electrode, the first source electrode, and the semiconductor layer form a pull-up transistor, and
wherein the light shielding layer and the source area of the semiconductor layer respectively form a first electrode and a second electrode of a boosting capacitor.

15. The display apparatus of claim 14 , further comprising:
a buffer layer on the light shielding layer and under the semiconductor layer,
wherein the boosting capacitor is formed at a portion of the buffer layer between the light shielding layer as the first electrode of the boosting capacitor and the source area of the semiconductor layer as the second electrode of the boosting capacitor.

16. The display apparatus of claim 15 , further comprising:
a gate insulating layer between the semiconductor layer and the first gate electrode,
wherein the first gate electrode is electrically connected to the light shielding layer via a gate contact hole through the gate insulating layer and the buffer layer.

17. The display apparatus of claim 16 , further comprising:
an intermediate insulating layer over the first gate electrode,
wherein the first drain electrode is over the intermediate insulating layer and is electrically connected to the drain area via a drain contact hole through the intermediate insulating layer, and
wherein the first source electrode is over the intermediate insulating layer and is electrically connected to the source area via a source contact hole through the intermediate insulating layer.

18. The display apparatus of claim 14 , wherein the channel area covers the light shielding layer in plan view.

19. The display apparatus of claim 14 , wherein the pull-up thin film transistor and the boost capacitor are in a non-display area of the substrate.

20. The display apparatus of claim 14 , further comprising:
a pull-down thin film transistor in a non-display area of the substrate, and in

Assignees

• Lg Display Co Ltd

Inventors

• Kim Dosung
• Tani Ryosuke

Classifications

• G02F1/1368

  in which the switching element is a three-electrode device {(G02F1/136277 takes precedence)} · CPC title

• G02F1/136209 Primary

  Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element · CPC title

• G09G3/20 Primary

  for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix {no fixed position being assigned to or needed to be assigned to the individual characters or partial characters} · CPC title

• G02F1/133308

  Support structures for LCD panels, e.g. frames or bezels · CPC title

• G02F1/13454 Primary

  Drivers integrated on the active matrix substrate (G02F1/136277 takes precedence) · CPC title