Manufacturing method of micro-nano structure antireflective coating layer and display apparatus thereof

US10274645B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10274645-B2
Application numberUS-201615325448-A
CountryUS
Kind codeB2
Filing dateDec 28, 2016
Priority dateNov 22, 2016
Publication dateApr 30, 2019
Grant dateApr 30, 2019

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  1. Title

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  5. First independent claim

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Abstract

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A manufacturing method of micro-nano structure antireflective coating layer and a display apparatus thereof are described. The method includes providing a substrate, forming a silicon oxide layer on the substrate, forming a graphene layer with a hexagonal honeycomb lattice on the silicon oxide layer, and forming a bottom surface of the antireflective coating layer in the nucleation points by serving the graphene layer as a growing base layer, wherein a diffusion length and an atomic mass of diffusion atoms of the antireflective coating layer are decreased with time by a gradient growing manner to form a upper surface of the antireflective coating layer.

First claim

Opening claim text (preview).

What is claimed is: 1. A method of manufacturing a micro-nano structure antireflective coating layer, comprising: providing a substrate; forming a silicon oxide layer on the substrate, wherein the silicon oxide layer comprises a plurality of holes which provide a plurality of nucleation points of an antireflective coating layer; forming a graphene layer with a hexagonal honeycomb lattice on the silicon oxide layer; and forming a bottom surface of the antireflective coating layer in the nucleation points whereby the graphene layer serves as a growing base layer so that the bottom surface is a hexagonal shape, wherein a diffusion length and an atomic mass of diffusion atoms of the antireflective coating layer are decreased with time by a gradient growing manner to form a upper surface of the antireflective coating layer; wherein the gradient growing manner comprises a growth temperature adjustment and a control concentration of a growth source, and wherein a material of the antireflective coating layer is either zinc oxide or silicon. 2. The method of manufacturing the micro-nano structure antireflective coating layer of claim 1 , wherein a formation the graphene layer is selected from one group consisting of a chemical vapor deposition method, an epitaxially silicon carbide extension in a temperature annealing manner, and an epitaxially single crystal metal surface extension manner. 3. The method of manufacturing the micro-nano structure antireflective coating layer of claim 1 , wherein a shape of the upper surface is either a hexagonal or circular shape. 4. The method of manufacturing the micro-nano structure antireflective coating layer of claim 3 , wherein an area of the bottom surface is greater than an area of the upper surface. 5. The method of manufacturing the micro-nano structure antireflective coating layer of claim 1 , wherein a diameter of the bottom surface has a range from 100 to 900 nanometers. 6. The method of manufacturing the micro-nano structure antireflective coating layer of claim 1 , wherein a distance between the bottom surface and the upper surface has a range from 100 to 1000 nanometers. 7. A method of manufacturing a micro-nano structure antireflective coating layer, comprising: providing a substrate; forming a silicon oxide layer on the substrate, wherein the silicon oxide layer comprises a plurality of holes which provide a plurality of nucleation points of an antireflective coating layer; forming a graphene layer with a hexagonal honeycomb lattice on the silicon oxide layer; and forming a bottom surface of the antireflective coating layer in the nucleation points whereby the graphene layer serves as a growing base layer so that the bottom surface is a hexagonal shape, wherein a diffusion length and an atomic mass of diffusion atoms of the antireflective coating layer are decreased with time by a gradient growing manner to form a upper surface of the antireflective coating layer. 8. The method of manufacturing the micro-nano structure antireflective coating layer of claim 7 , wherein the gradient growing manner comprises a growth temperature adjustment and a control concentration of a growth source. 9. The method of manufacturing the micro-nano structure antireflective coating layer of claim 7 , wherein a material of the antireflective coating layer is either zinc oxide or silicon. 10. The method of manufacturing the micro-nano structure antireflective coating layer of claim 7 , wherein a formation the graphene layer is selected from one group consisting of a chemical vapor deposition method, an epitaxially silicon carbide extension in a temperature annealing manner, and an epitaxially single crystal metal surface extension manner. 11. The method of manufacturing the micro-nano structure antireflective coating layer of claim 7 , wherein a shape of the upper surface is either a hexagonal or circular shape. 12. The method of manufacturing the micro-nano structure antireflective coating layer of claim 11 , wherein an area of the bottom surface is greater than an area of the upper surface. 13. The method of manufacturing the micro-nano structure antireflective coating layer of claim 11 , wherein a distance between the bottom surface and the upper surface has a range from 100 to 1000 nanometers. 14. The method of manufacturing the micro-nano structure antireflective coating layer of claim 7 , wherein a diameter of the bottom surface has a range from 100 to 900 nanometers.

Assignees

Inventors

Classifications

  • Oxides (C03C17/02 takes precedence) · CPC title

  • comprising carbon, a carbide or oxycarbide · CPC title

  • having sub-optical wavelength surface structures designed to provide an enhanced transmittance, e.g. moth-eye structures · CPC title

  • comprising an alternation of high and low refractive indexes · CPC title

  • Graphene characterized by its properties · CPC title

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What does patent US10274645B2 cover?
A manufacturing method of micro-nano structure antireflective coating layer and a display apparatus thereof are described. The method includes providing a substrate, forming a silicon oxide layer on the substrate, forming a graphene layer with a hexagonal honeycomb lattice on the silicon oxide layer, and forming a bottom surface of the antireflective coating layer in the nucleation points by se…
Who is the assignee on this patent?
Wuhan China Star Optoelectronics Technology Co Ltd
What technology area does this patent fall under?
Primary CPC classification G02B1/113. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Apr 30 2019 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).