Device having at least two wafers for detecting electromagnetic radiation and method for producing said device

Patent metadata

Field	Value
Publication number	US-10270001-B2
Application number	US-201314428736-A
Country	US
Kind code	B2
Filing date	Aug 8, 2013
Priority date	Sep 18, 2012
Publication date	Apr 23, 2019
Grant date	Apr 23, 2019

Abstract

An arrangement of at least two wafers for detecting electromagnetic radiation, in particular far infrared radiation, comprises a first wafer and a second wafer. The first wafer includes a microsystem formed as a sensor array. The microsystem is configured to register electromagnetic radiation and provide a corresponding sensor signal. The second wafer includes an integrated circuit formed as an evaluation circuit that is coupled to the sensor array. The integrated circuit is configured to detect the electromagnetic radiation with the aid of the sensor signal provided.

First claim

The invention claimed is:

1. An arrangement of at least two wafers for detecting electromagnetic radiation, comprising:
a first wafer including a microsystem formed as a sensor array including a plurality of sensor elements positioned at a first side of the first wafer, each of the plurality of sensor elements associated with a respective one of a plurality of cavities in the first side of the first wafer, the microsystem configured to register electromagnetic radiation and provide a corresponding sensor signal;
a second wafer bonded to a second side of the first wafer with at least one wafer bonding material and including an integrated circuit formed as an evaluation circuit that is coupled to the sensor array, the integrated circuit configured to detect the electromagnetic radiation with the aid of the sensor signal provided; and
a third wafer including a cavity, the cavity positioned directly above the sensor array and open to the sensor array.

2. The arrangement as claimed in claim 1 , wherein the evaluation circuit is configured as a circuit array.

3. The arrangement as claimed in claim 1 , wherein each of the plurality of sensor elements comprises at least one diode element.

4. The arrangement as claimed in claim 3 , wherein:
the evaluation circuit includes at least one evaluation unit; and
each of the at least one diode elements is coupled to the at least one evaluation unit.

5. The arrangement as claimed in claim 3 , wherein the at least one diode elements are connected in series.

6. The arrangement as claimed in claim 1 , wherein the integrated circuit is configured as an application-specific integrated circuit.

7. The arrangement as claimed in claim 1 , wherein the sensor array is configured as a microbolometer array for registering the electromagnetic radiation.

8. The arrangement as claimed in claim 1 , wherein the integrated circuit has a heat shield.

9. The arrangement as claimed in claim 1 , wherein the microsystem has a getter device.

10. The arrangement as claimed in claim 1 , wherein the first wafer has a through-contact.

11. The arrangement as claimed in claim 1 , wherein the second wafer has a through-contact.

12. The arrangement as claimed in claim 1 , wherein the electromagnetic radiation is far infrared radiation.

13. The device of claim 1 , wherein:
the sensor array defines a plane; and
the second wafer is configured such that a line orthogonal to the plane extends through the sensor array and the integrated circuit.

14. A method for producing an arrangement of at least two wafers for detecting electromagnetic radiation, comprising:
providing a first wafer having a microsystem formed as a sensor array, the sensor array including a plurality of sensor elements positioned at a first side of the first wafer, each of the plurality of sensor elements associated with a respective one of a plurality of cavities in the first side of the first wafer, the microsystem configured to register electromagnetic radiation and provide a corresponding sensor signal and a second wafer having an integrated circuit formed as an evaluation circuit that is coupled to the sensor array, the integrated circuit configured to detect the electromagnetic radiation with the aid of the sensor signal provided;
applying bonding material onto the first wafer and onto the second wafer;
bonding the first wafer provided with bonding material and the second wafer provided with bonding material in order to produce the arrangement;
positioning a third wafer including a cavity directly above the sensor array such that the cavity opens to the sensor array; and
bonding the third wafer to the first side of the first wafer.

15. The method as claimed in claim 14 , wherein the electromagnetic radiation is far infrared radiation.

16. The method of claim 14 , wherein:
the sensor array defines a plane; and
bonding the first wafer includes bonding the first wafer and the second wafer such that a line orthogonal to the plane extends through the sensor array and the integrated circuit in order to produce the arrangement.

Assignees

• Bosch Gmbh Robert

Inventors

• Herrmann Ingo
• Reinhart Karl-Franz
• Pirk Tjalf

Classifications

• H10W72/0198

  batch processes · CPC title

• H10W72/952

  comprising metals or metalloids, e.g. PbSn, Ag or Cu · CPC title

• H10W72/352

  comprising metals or metalloids, e.g. solders · CPC title

• H10W72/01338

  in gaseous form, e.g. by CVD or PVD · CPC title

• H10W90/732

  between stacked chips · CPC title