Glass substrate and glass substrate for high frequency device

Patent metadata

Field	Value
Publication number	US-10264672-B2
Application number	US-201815962076-A
Country	US
Kind code	B2
Filing date	Apr 25, 2018
Priority date	Apr 28, 2017
Publication date	Apr 16, 2019
Grant date	Apr 16, 2019

Abstract

A glass substrate includes a plurality of through holes that penetrate from a first surface to a second surface of the glass substrate. Each through hole has an upper aperture with a first diameter on the first surface and a lower aperture with a second diameter on the second surface. For each of ten through holes selected from the plurality of through holes, a side wall length is obtained from the first and second diameters and the thickness of the glass substrate, and an R value is obtained by dividing the side wall length by the thickness of the glass substrate. The R values fall within a range of 1 to 1.1. A B value, obtained from dividing a difference between the greatest R value and the smallest R value by an average of the R values followed by multiplication with 100, is 5% or less.

First claim

What is claimed is:

1. A glass substrate comprising:
a first surface;
a second surface; and
a plurality of through holes that penetrate from the first surface to the second surface,
wherein each of the through holes has an upper aperture with a diameter ϕ 1 on the first surface, and a lower aperture with a diameter ϕ 2 on the second surface,
wherein selected through holes are ten through holes randomly selected from the plurality of through holes,
wherein a straight type through hole is a selected through hole, in which a constricted part with a diameter being less than a smaller diameter from among the diameter ϕ 1 and the diameter ϕ 2 is absent, and
an X-type through hole is a selected through hole, in which a constricted part with a diameter ϕ 3 being less than a smaller diameter from among the diameter ϕ 1 and the diameter ϕ 2 is present,
wherein, for each of the selected through holes, in a cross section of the selected through hole cut along an axis of expansion of the selected through hole, an approximated length L of a side wall is

[

Math
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⁢
1

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⁢

L
=

t
2

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(

ϕ
1

-

ϕ
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formula
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(
1
)

when the selected through hole is a straight type through hole, and

[

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⁢

⁢
2

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L
=

(

t
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ϕ
1

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ϕ
3

2

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2

+

(

t
2

)

2

+

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ϕ
2

-

ϕ
3

2

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2

formula
⁢

⁢

(
2
)

when the selected through hole is an X-type through hole, where t is a thickness of the glass substrate,
wherein R values each expressed by a ratio of the approximate length of the side wall to the thickness of the glass substrate, L/t, fall within a range of 1 to 1.1, and
wherein a B value obtained by

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Math
⁢

⁢
3

]

⁢

B
=

R
max

-

R
min

R
ave

×
100

Assignees

• Agc Inc

Inventors

• Mori Shigetoshi
• Ono Motoshi
• Isobe Mamoru
• Horiuchi Kohei

Classifications

• H05K1/0306 Primary

  Inorganic insulating substrates, e.g. ceramic, glass · CPC title

• H05K1/115

  Via connections; Lands around holes or via connections (H05K1/112 takes precedence) · CPC title

• H05K3/002 Primary

  by liquid chemical etching · CPC title

• H05K3/0029

  of inorganic insulating material · CPC title

• H05K2201/09854

  Hole or via having special cross-section, e.g. elliptical · CPC title