Carbon-silicon composite, method of preparing the same, and anode active material including the carbon-silicon composite

Patent metadata

Field	Value
Publication number	US-10263249-B2
Application number	US-201314096695-A
Country	US
Kind code	B2
Filing date	Dec 4, 2013
Priority date	Jul 20, 2012
Publication date	Apr 16, 2019
Grant date	Apr 16, 2019

Abstract

Provided are a carbon-silicon composite having improved capacity and cycle stability, and a method of preparing the same. More particularly, the present invention relates to a carbon-silicon composite, in which surfaces of silicon particles are coated with a carbon-based material that is doped with at least one type of doping atoms selected from the group consisting of nitrogen (N), phosphorous (P), boron (B), sodium (Na), and aluminum (Al), and a method of preparing the same.

First claim

The invention claimed is:

1. A carbon-silicon composite, comprising silicon particles and a carbon-based material on surfaces of the silicon particles,
wherein the carbon-based material comprises defects that are doped with at least one type of doping atoms,
wherein the at least one type of doping atoms are selected from the group consisting of nitrogen (N), phosphorous (P), boron (B), sodium (Na), and aluminum (Al),
wherein a thickness of the carbon-based material coated on the surfaces of the silicon particles is in a range of 1 nm to 5 nm, and
wherein the carbon-based material is included in an amount ranging from 5 wt % to 10 wt % of the silicon particles.

2. The carbon-silicon composite of claim 1 , wherein the doping atoms are included in an amount ranging from 3% to 8% based on carbon atoms of the carbon-based material.

3. The carbon-silicon composite of claim 1 , wherein the carbon-based material is any one selected from the group consisting of graphene nanoribbons, carbon nanotubes, and reduced graphene oxide, or a mixture of two or more thereof.

4. A method of preparing the carbon-silicon composite of claim 1 , the method comprising:
adding a carbon-based material, silicon particles, and a reducing agent to a solution; and
heat treating a mixture obtained by the addition.

5. The method of claim 4 , wherein the carbon-based material is positively charged and the silicon particles are negatively charged to be bound by mutual electrostatic attraction.

6. The method of claim 4 , wherein the carbon-based material is any one selected from the group consisting of graphene nanoribbons, carbon nanotubes, and reduced graphene oxide, or a mixture of two or more thereof.

7. The method of claim 4 , wherein a diameter of the silicon particle is in a range of 1 nm to 100 nm.

8. The method of claim 4 , wherein the reducing agent is any one selected from the group consisting of hydrazine, ammonia, sodium borohydride, sodium naphthalenide, sodium anthracenide, sodium benzophenone, sodium acenaphthylenide, ferrocene, lithium aluminium hydride, lithium tris(terbutoxy)aluminium hydride borane, 9-borabicyclo[3.3.1]nonane, and diisobutylaluminium hydride, or a mixture of two or more thereof.

9. The method of claim 4 , wherein the solution is any one selected from the group consisting of water, distilled water, N-methyl-2-pyrrolidone (NMP), dimethyl sulfoxide (DMSO), acetonitrile, acetone, tetrahydrofuran (THF), diethyl ether, toluene, and 1,2-dichlorobenzene, or a mixture of two or more thereof.

10. The method of claim 4 , wherein the solution is alkalescent with a pH value ranging from 7 to 9.

11. The method of claim 4 , wherein the heat treatment is performed at a temperature ranging from 350° C. to 750° C.

12. The method of claim 4 , further comprising filtering the mixture between the adding to the solution and the heat treating.

13. An anode active material comprising the carbon-silicon composite of claim 1 .

14. An anode comprising the anode active material of claim 13 .

15. A secondary battery comprising the anode of claim 14 .

Assignees

• Lg Chemical Ltd
• Korea Advanced Inst Sci & Tech

Inventors

• Kim Hyun Wook
• Kim Ki Tae
• Kim Sang Ouk
• Lee Won Jun

Classifications

• C01B33/02

  Silicon (forming single crystals or homogeneous polycrystalline material with defined structure C30B) · CPC title

• H01M4/366 Primary

  as layered products · CPC title

• H01M4/625

  Carbon or graphite · CPC title

• H01M4/134

  Electrodes based on metals, Si or alloys · CPC title

• H01M4/386

  Silicon or alloys based on silicon · CPC title