Magnetoresistive random access memory devices and methods of manufacturing the same

Patent metadata

Field	Value
Publication number	US-10263035-B2
Application number	US-201615213706-A
Country	US
Kind code	B2
Filing date	Jul 19, 2016
Priority date	Nov 24, 2015
Publication date	Apr 16, 2019
Grant date	Apr 16, 2019

Abstract

An MRAM device includes a lower electrode on a substrate, an MTJ structure on the lower electrode, a metal oxide pattern on the MTJ structure, a conductive pattern on at least a portion of a sidewall of the metal oxide pattern, and an upper electrode on the metal oxide pattern and the conductive pattern. The conductive pattern has a thickness varying along the sidewall of the metal oxide pattern in a plan view.

First claim

What is claimed is:

1. An MRAM device, comprising:
a lower electrode on a substrate;
an MTJ structure on the lower electrode;
a metal oxide pattern directly on an uppermost surface of the MTJ structure relative to the substrate;
a conductive pattern on at least a portion of an exterior sidewall of the metal oxide pattern, the conductive pattern having a thickness varying along the exterior sidewall of the metal oxide pattern in a plan view; and
an upper electrode on uppermost surfaces of the metal oxide pattern and the conductive pattern relative to the substrate.

2. The MRAM device of claim 1 , wherein the conductive pattern includes a metal that is included in the metal oxide pattern.

3. The MRAM device of claim 2 , wherein the conductive pattern includes a heavy metal.

4. The MRAM device of claim 2 , wherein the conductive pattern further includes a conductive material that is included in the upper electrode.

5. The MRAM device of claim 1 , wherein the metal oxide pattern includes an oxide of a heavy metal.

6. The MRAM device of claim 1 , wherein the metal oxide pattern has a periphery of a circle or an ellipse in a plan view,
wherein the conductive pattern comprises an interior surface adjacent the metal oxide pattern and an exterior surface opposite the metal oxide pattern, and
wherein the thickness between the interior surface and the exterior surface of the conductive pattern gradually decreases from a first point of the periphery of the circle or the ellipse of the metal oxide pattern toward a second point of the periphery of the circle or the ellipse opposite to the first point with respect to a center of the circle or the ellipse.

7. The MRAM device of claim 1 , further comprising a metal pattern between the MTJ structure and the metal oxide pattern.

8. The MRAM device of claim 7 , wherein the metal pattern includes a material having a high spin orbit coupling.

9. The MRAM device of claim 7 , wherein the metal pattern includes a metal that is substantially the same as that of the metal oxide pattern.

10. The MRAM device of claim 8 , wherein the metal pattern includes a heavy metal.

11. The MRAM device of claim 1 ,
wherein the metal oxide pattern has a shape of a solid circular cylinder or a solid elliptical cylinder, and
wherein the conductive pattern has a shape of a hollow circular cylinder or a hollow elliptical cylinder at least partially surrounding the solid circular cylinder or the solid elliptical cylinder of the metal oxide pattern.

12. The MRAM device of claim 1 , wherein a center of the conductive pattern is offset from a center of the metal oxide pattern.

13. The MRAM device of claim 1 , wherein the conductive pattern extends onto at least a portion of a sidewall of the upper electrode.

14. An MRAM device, comprising:
a lower electrode on a substrate;
an MTJ structure including:
a fixed pattern structure on the lower electrode, the fixed pattern structure having a perpendicular magnetization direction relative to an upper surface thereof;
a tunnel barrier pattern on the fixed pattern structure; and
a free layer pattern on the tunnel barrier pattern, the free layer pattern having a perpendicular magnetization direction relative to an upper surface thereof;

a metal oxide pattern directly on an uppermost surface of the MTJ structure relative to the substrate;
a conductive pattern on at least at a portion of an exterior periphery of the metal oxide pattern, the conductive pattern having a thickness asymmetrically varying along the exterior periphery of the metal oxide pattern; and
an upper electrode on an uppermost surface of the metal oxide pattern relative to the substrate.

15. The MRAM device of claim 14 , wherein the metal oxide pattern includes an oxide of a heavy metal.

16. The MRAM device of claim 14 , wherein the metal oxide pattern has a shape of a circular cylinder or an elliptical cylinder, and the exterior periphery comprises an exterior periphery of the circular cylinder or the elliptical cylinder.

17. An MRAM device, comprising:
a lower electrode on a substrate;
an MTJ structure that includes a fixed pattern structure that is on the lower electrode and that has a perpendicular magnetization direction relative to an upper surface of the fixed pattern structure;
a metal oxide pattern directly on an uppermost surface of the MTJ structure relative to the substrate;
a conductive pattern on at least a portion of an exterior sidewall of the metal oxide pattern, the conductive pattern having a thickness varying along the exterior sidewall of the metal oxide pattern in a plan view; and
an upper electrode on uppermost surfaces of the metal oxide pattern and the conductive pattern relative to the substrate.

18. The MRAM device of claim 17 , wherein the metal oxide pattern has a periphery of a circle or an ellipse in a plan view,
wherein the conductive pattern comprises an interior surface adjacent the metal oxide pattern and an exterior surface opposite the metal oxide pattern, and
wherein the thickness between the interior surface and the exterior surface of the conductive pattern gradually decreases from a first point of the periphery of the circle or the ellipse of the metal oxide pattern toward a second point of the periphery of the circle or the ellipse opposite to the first point with respect to a center of the circle or the ellipse.

19. The MRAM device of claim 17 , further comprising a metal pattern between the MTJ structure and the metal oxide pattern and that includes a material having a high spin orbit coupling.

20. The MRAM device of claim 17 , wherein a vertical current flows in the conductive pattern when a vertical current is applied between the upper and lower electrodes, and
wherein a horizontal current flows in the metal oxide pattern when a vertical current is applied between the upper and lower electrodes.

Assignees

• Ahn Sung Min
• Ryu Ji Su
• Lee Seung Min
• Samsung Electronics Co Ltd

Inventors

• Ahn Sung-Min
• Ryu Ji-Su
• Lee Seung-Min

Classifications

• H01L43/02

  Electricity · mapped topic

• H01L43/10

  Electricity · mapped topic

• H01L27/222 Primary

  Electricity · mapped topic

• H10N50/85

  Materials of the active region · CPC title

• H10N50/10 Primary

  Magnetoresistive devices · CPC title