Near field metrology

Patent metadata

Field	Value
Publication number	US-10261014-B2
Application number	US-201414583447-A
Country	US
Kind code	B2
Filing date	Dec 26, 2014
Priority date	Jun 26, 2012
Publication date	Apr 16, 2019
Grant date	Apr 16, 2019

Abstract

Metrology systems and methods are provided herein, which comprise an optical element that is positioned between an objective lens of the system and a target. The optical element is arranged to enhance evanescent modes of radiation reflected by the target. Various configurations are disclosed: the optical element may comprise a solid immersion lens, a combination of Moiré-elements and solid immersion optics, dielectric-metal-dielectric stacks of different designs, and resonating elements to amplify the evanescent modes of illuminating radiation. The metrology systems and methods are configurable to various metrology types, including imaging and scatterometry methods.

First claim

What is claimed is:

1. A metrology system, comprising:
an illumination sub-system configured to illuminate an overlay metrology target with a first evanescent mode of radiation along an illumination optical path;
a collection sub-system configured to measure a second evanescent mode of radiation scattered by the overlay metrology target along a collection optical path, the second evanescent mode of radiation including at least a first diffraction order of radiation;
an objective lens configured to at least one of transmit the first evanescent mode of radiation from the illumination sub-system or transmit the second evanescent mode of radiation scattered by the overlay metrology target to the collection sub-system; and
one or more optical elements including at least a dielectric-metal-dielectric stack,
wherein the dielectric-metal-dielectric stack includes a first dielectric layer, a metal layer disposed on the first dielectric layer, and a second dielectric layer disposed on the metal layer,
wherein the first dielectric layer includes a sinusoidal-shaped top surface, wherein the metal layer includes a sinusoidal-shaped bottom surface that substantially conforms to the sinusoidal-shaped top surface of the first dielectric layer, wherein the metal layer includes a sinusoidal-shaped top surface that substantially conforms to a sinusoidal-shaped bottom surface of the second dielectric layer,
wherein the dielectric-metal-dielectric stack is positioned between the objective lens and the overlay metrology target, wherein the dielectric-metal-dielectric stack is configured to amplify at least one of at least the first evanescent mode of radiation or the second evanescent mode of radiation interacting with the overlay metrology target and configured to inhibit a zeroth-order mode of radiation from contaminating the second evanescent mode of radiation.

2. The metrology system of claim 1 , wherein the one or more optical elements are configured to convert at least one of the first evanescent mode of radiation or the second evanescent mode of radiation to a propagating mode of radiation.

3. The metrology system of claim 1 , wherein the one or more optical elements include a solid immersion lens configured to amplify a resolution of the metrology system.

4. The metrology system of claim 3 , wherein the solid immersion lens illuminates the overlay metrology target with the first evanescent mode of radiation from the illumination sub-system to generate an image of the overlay metrology target.

5. The metrology system of claim 1 , wherein the one or more optical elements include a solid immersion lens configured to increase a range of incident angles of radiation on the overlay metrology target, and further configured to amplify the second evanescent mode of radiation including the at least the first diffraction order of radiation.

6. The metrology system of claim 1 , wherein the dielectric-metal-dielectric stack is inclined at an angle relative to at least one of the top surface of the overlay metrology target or the bottom surface of the objective lens, wherein the dielectric-metal-dielectric stack is configured to amplify the second evanescent mode of radiation scattered by the overlay metrology target.

7. The metrology system of claim 1 , wherein a sinusoidal-shaped bottom surface of the first dielectric layer and a sinusoidal-shaped top surface of the second dielectric layer do not substantially conform to a top surface of the overlay metrology target or a bottom surface of the objective lens, wherein the dielectric-metal-dielectric stack is configured to amplify the second evanescent mode of radiation scattered by the overlay metrology target.

8. A metrology method, comprising:
positioning one or more optical elements including at least a dielectric-metal-dielectric stack between an objective lens and an overlay metrology target, wherein the objective lens is configured to at least one of transmit a first evanescent mode of radiation from an illumination sub-system of a metrology system or transmit a second evanescent mode of radiation scattered by the overlay metrology target to a collection sub-system of the metrology system;
amplifying at least one of at least the first evanescent mode of radiation or the second evanescent mode of radiation interacting with the target via the one or more optical elements including at least the dielectric-metal-dielectric stack;
inhibiting a zeroth-order mode of radiation contaminating a second evanescent mode of radiation scattered by the overlay metrology target via the one or more optical elements including at least the dielectric-metal-dielectric stack; and
measuring at least a first diffraction order of radiation in the second evanescent mode of radiation scattered by the overlay metrology target with the collection sub-system,
wherein the dielectric-metal-dielectric stack includes a first dielectric layer, a metal layer disposed on the first dielectric layer, and a second dielectric layer disposed on the metal layer,
wherein the first dielectric layer includes a sinusoidal-shaped top surface, wherein the metal layer includes a sinusoidal-shaped bottom surface that substantially conforms to the sinusoidal-shaped top surface of the first dielectric layer, wherein the metal layer includes a sinusoidal-shaped top surface that substantially conforms to a sinusoidal-shaped bottom surface of the second dielectric layer,
wherein the dielectric-metal-dielectric stack is positioned a selected distance from a top surface of the overlay metrology target and a bottom surface of the objective lens.

9. The method of claim 8 , further comprising:
converting at least one of the first evanescent mode of radiation or the second evanescent mode of radiation interacting with the overlay metrology target into a propagating mode of radiation.

10. The metrology method of claim 8 , further comprising:
generating an image of the overlay metrology target by using a solid immersion lens as an optical element of the one or more optical elements to illuminate the overlay metrology target with the first evanescent mode of radiation from the illumination sub-system.

11. The metrology method of claim 10 , wherein the solid immersion lens is configured to increase a spatial resolution of the metrology system.

12. The metrology method of claim 8 , further comprising:
amplifying the second evanescent mode of radiation including the at least the first diffraction order of radiation scattered by the overlay metrology target by using a solid immersion lens as an optical element of the one or more optical elements to increase a range of incident angles of the radiation on the overlay metrology target.

13. The metrology method of claim 8 , wherein the dielectric-metal-dielectric stack is inclined at an angle relative at least one of the top surface of the overlay metrology target or the bottom surface of the objective lens.

14. The metrology method of claim 8 , wherein a sinusoidal-shaped bottom surface of the first dielectric layer and a sinusoidal-shaped top surface of the second dielectric layer do not substantially conform to a top surface of the overlay metrology target or a bottom surface of the objective lens.

15. A metrology system, comprising:
an illumination sub-system configured to illuminate an overlay metrology target with a first evanescent mode of radiation along an illumination optical path;
a collection sub-system configured to measure a second evanescent mode of radiation scattered by the overlay metrology target along a collection optical path, the second evanescent mode of radiation including at

Assignees

• Kla Tencor Corp

Inventors

• Sapiens Noam
• Seligson Joel
• Levinski Vladimir
• Kandel Daniel
• Feler Yoel
• Bringoltz Barak
• Manassen Amnon
• Benisty Eliav

Classifications

• G02B27/56 Primary

  Optics using evanescent waves, i.e. inhomogeneous waves · CPC title

• G02B1/00 Primary

  Optical elements characterised by the material of which they are made; Optical coatings for optical elements · CPC title

• G01R31/2601

  Apparatus or methods therefor (G01R31/2607, G01R31/2642 take precedence) · CPC title

• G02B27/58

  Optics for apodization or superresolution; Optical synthetic aperture systems · CPC title

• G01N2201/06113

  Coherent sources; lasers · CPC title