Electrically pumped photonic crystal nanolaser

Patent metadata

Field	Value
Publication number	US-10256604-B2
Application number	US-201515739339-A
Country	US
Kind code	B2
Filing date	Jun 26, 2015
Priority date	Jun 26, 2015
Publication date	Apr 9, 2019
Grant date	Apr 9, 2019

Abstract

A semiconductor nanolaser includes a rib formed by a stack of layers, in which stack central layers ( 33, 34, 35 ) forming an assembly of quantum wells are placed between a lower layer ( 32 ) of a first conductivity type and an upper layer ( 36 ) of a second conductivity type. Holes ( 42 ) are drilled right through the thickness of the rib, wherein the lower layer includes first extensions ( 38, 40 ) that extend laterally on either side of the rib, and that are coated with first metallizations ( 42, 44 ) that are located a distance away from the rib. The stack includes second extensions ( 45, 46 ) that extend longitudinally beyond said rib, and that are coated with second metallizations ( 47, 48 ).

First claim

What is claimed:

1. A nanolaser with semiconductors, comprising:
a rib having a stack of layers which include central layers forming an assembly of quantum wells arranged between a lower layer of a first conductivity type and an upper layer of a second conductivity type, said rib including a plurality of holes pierced through a thickness of the rib and arranged in a longitudinal direction between a first end of the rib and a second end of the rib;
wherein said lower layer of the rib comprises first extensions which extend in a lateral direction from opposite sides of the rib and which are coated with first metallizations that are spaced apart from central layers of the rib, said lateral direction being perpendicular to the longitudinal direction; and
wherein said upper layer of the rib comprises second extensions which extend in the longitudinal direction beyond the first and second ends of said rib and which are coated with second metallizations.

2. The nanolaser of claim 1 , wherein the first extensions of the lower layer have a thickness which is less than a thickness of a remainder of the lower layer in said rib.

3. The nanolaser of claim 1 , wherein a distance that said first metallizations are spaced apart from the central layers of the rib is in the order of a wavelength divided by a refraction index of a material covering the first metallizations.

4. The nanolaser of claim 1 , wherein the stack of layers of said rib successively comprises:
the lower layer of a P-type doped III-V semiconductor;
the central layers formed by a stack of layers of III-V semiconductors, of different bandgaps; and
the upper layer of an N-type doped III-V semiconductor.

5. The nanolaser of claim 1 , further comprising a silicon substrate supporting the rib and having an optical guide configured to couple in operation with the nanolaser.

6. The nanolaser of claim 1 , wherein the rib has a first width in the lateral direction, wherein each second extension has a second width in the lateral direction, and wherein the second width is greater than the first width.

7. A nanolaser with semiconductors,
a rib having a stack of layers which include central layers forming an assembly of quantum wells arranged between a lower layer of a first conductivity type and an upper layer of a second conductivity type, said rib including a plurality of holes pierced through a thickness of the rib, wherein the stack of layers of said rib successively comprises:
the lower layer of indium gallium arsenide phosphide, InGaAsP, P-type doped, having gallium forming from 0 to 40% of its cations and phosphorus forming from 0 to 60% of its anions, doped by zinc atoms at 10 18 atoms/cm 3 ;
a first intrinsic InGaAsP layer, having gallium forming from 0 to 40% of its cations and phosphorus forming from 0 to 60% of its anions;
the central layers formed by layers of a first composition of InGaAsP separated by InGaAsP layers of a second composition, such that the InGaAsP layers of the first composition form the quantum wells;
a second intrinsic InGaAsP layer, having gallium forming from 0 to 40% of its cations and phosphorus forming from 0 to 60% of its anions; and
the upper layer of indium phosphide N-type doped with silicon atoms at 10 18 atoms/cm 3 ;

wherein said lower layer comprises first extensions which extend laterally on either side of the rib and which are coated with first metallizations that are spaced apart from the central layers of the rib; and
wherein said upper layer comprises second extensions which extend longitudinally beyond either end of said rib and which are coated with second metallizations.

8. The nanolaser of claim 7 , wherein the first composition has gallium from 0 to 40% of the cations and phosphorus from 25 to 75% of the anions.

9. The nanolaser of claim 8 , wherein the first composition comprises In 0,84 Ga 0,16 As 0,76 P 0,24 .

10. The nanolaser of claim 7 , wherein the second composition has gallium from 5 to 40% of the cations and phosphorus from 0 to 60% of the anions.

11. The nanolaser of claim 10 , wherein the second composition comprises In 0,84 Ga 0,16 As 0,48 P 0,52 .

12. The nanolaser of claim 7 , wherein the lower layer of indium gallium arsenide phosphide comprises In 0,8 Ga 0,2 As 0,45 P 0,55 .

13. The nanolaser of claim 7 , wherein the first intrinsic InGaAsP layer comprises In 0,84 Ga 0,16 As 0,48 P 0,52 .

14. The nanolaser of claim 5 , wherein the second intrinsic InGaAsP layer comprises In 0,84 Ga 0,16 As 0,48 P 0,52 .

15. A nanolaser with semiconductors,
a rib having a stack of layers which include central layers forming an assembly of quantum wells arranged between a lower layer of a first conductivity type and an upper layer of a second conductivity type, said rib including a plurality of holes pierced through a thickness of the rib, wherein the stack of layers in the rib successively comprises:
the lower layer of indium gallium arsenide phosphide, InGaAsP, P-type doped, having a thickness in a range from 50 to 250 nm;
a first intrinsic InGaAsP layer having a thickness in the range from 15 to 100 nm;
the central layer comprise InGaAsP layers of a first composition separated by InGaAsP layers of a second composition, the layers of the first composition having a thickness in the range from 4 to 12 nm and the layers of the second composition having thicknesses in a range from 10 to 50 nm;
a second intrinsic InGaAsP layer having a thickness in a range from 15 to 100 nm; and
the upper layer of N-type doped indium phosphide having a thickness in the range from 50 to 250 nm;

wherein said lower layer comprises first extensions which extend laterally on either side of the rib and which are coated with first metallizations that are spaced apart from the central layers of the rib; and
wherein said upper layer comprises second extensions which extend longitudinally beyond either end of said rib and which are coated with second metallizations.

16. The nanolaser of claim 15 , wherein the thickness of the lower layer of indium gallium arsenide phosphide is in a range of 100 to 150 nm.

17. The nanolaser of claim 15 , wherein the thickness of each of the first and second intrinsic InGaAsP layers is in a range from 15 to 60 nm.

18. The nanolaser of claim 15 , wherein the layers of the second composition have thicknesses in a range from 10 to 20 nm.

19. The nanolaser of claim 15 , wherein the upper layer has a thickness in a range from 100 to 150 nm.

20. A nanolaser with semiconductors,
a rib having a stack of layers, said rib including a plurality of holes pierced through a thickness of the rib, wherein the stack of layers of said rib successively comprises:
a lower layer of indium gallium arsenide phosphide (InGaAsP), P-type doped;
a first intrinsic InGaAsP layer;
a plurality of central layers forming an assembly of quantum wells;
a second intrinsic InGaAsP layer; and
an upper layer of indium phosphide (InP), N-type doped;

wherein said lower layer comprises a first extension which extends laterally from a side of the rib and which is coated with a first metallization; and
wherein said upper layer comprises a second extension which extends longitudinally beyond an end of said rib and which is coated with a second metallization.

21. The nanolaser of claim 20 , wherein the plurality of central layers comprise layers of a first composition of InGaAsP separated by InGaAsP layers of a second composition, such that the InGaAsP layers of the first composition form the quantum wells.

Assignees

• St Microelectronics Crolles 2 Sas
• Centre Nat Rech Scient
• Univ Paris Diderot

Inventors

• Crosnier Guillaume
• Raineri Fabrice
• Raj Rama
• Monnier Paul

Classifications

• H01S5/026 Primary

  Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers (stabilisation of output H01S5/06) · CPC title

• H01S5/04257

  having positive and negative electrodes on the same side of the substrate · CPC title

• H01S5/1032

  Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region · CPC title

• H01S5/22

  having a ridge or stripe structure · CPC title

• G02F2201/063

  ridge; rib; strip loaded · CPC title