Solid-state imaging device, manufacturing method thereof, and electronic apparatus

Patent metadata

Field	Value
Publication number	US-10256267-B2
Application number	US-201715719824-A
Country	US
Kind code	B2
Filing date	Sep 29, 2017
Priority date	Feb 24, 2011
Publication date	Apr 9, 2019
Grant date	Apr 9, 2019

Abstract

A solid-state imaging device includes a plurality of photoelectric conversion portions each provided to correspond to each of a plurality of pixels in a semiconductor substrate and receiving incident light through a light sensing surface, and a pixel separation portion that is embedded into a trench provided on a side portion of the photoelectric conversion portion and electrically separates the plurality of pixels in a side of an incident surface of the semiconductor substrate into which the incident light enters. The pixel separation portion is formed by an insulation material which absorbs the incident light entering the light sensing surface.

First claim

What is claimed is:

1. An imaging device comprising:
a semiconductor substrate having a first side as a light-incident side and a second side opposite to the first side;
a plurality of photoelectric conversion portions disposed in the semiconductor substrate;
a trench disposed between photoelectric conversion portions of the plurality of photoelectric conversion portions;
a wiring layer disposed adjacent to the second side of the semiconductor substrate;
a first material disposed in the trench;
a second material disposed in the trench;
a silicon oxide layer disposed above the first material, the second material, and the first side of the semiconductor substrate;
a light-shielding portion disposed above the silicon oxide layer,
wherein the first material is selected from the group consisting of SiN, SiO2, SiCN, and SiOC, and

wherein the second material is selected from the group consisting of oxides of elemental hafnium, zirconium, aluminum, tantalum, titanium, magnesium, yttrium, and lanthanoids.

2. The imaging device of claim 1 , wherein the light-shielding portion is disposed at locations corresponding to the trench.

3. The imaging device of claim 2 , further comprising a color filter, wherein the light-shielding portion is disposed between the trench and the color filter.

4. The imaging device of claim 1 , further comprising a color filter, wherein the light-shielding portion is disposed between the silicon oxide layer and the color filter.

5. The imaging device of claim 1 , wherein portions of the first material and the second material are substantially planar with a surface of the first side of the semiconductor substrate.

6. The imaging device of claim 1 , wherein the light-shielding portion is disposed adjacent to the trench and includes a first portion having a material including titanium nitride and a second portion having a material including tungsten.

7. The imaging device of claim 1 , wherein a pixel separation portion including the first material is disposed within the trench, wherein the pixel separation portion has a lattice shape in a plan view, wherein the light-shielding portion has a lattice shape in the plan view, wherein the lattice shape of the light-shielding portion corresponds to the lattice shape of the pixel separation portion, and wherein the lattice shape of the light-shielding portion includes openings corresponding to the photoelectric conversion portions.

8. The imaging device of claim 1 , wherein the second material includes hafnium oxide.

9. The imaging device of claim 8 , wherein the first material includes silicon oxide.

10. The imaging device of claim 1 , wherein the trench extends from the first side to the second side of the semiconductor substrate.

11. The imaging device of claim 1 , wherein the thickness of the second material is 1-18 nm.

12. The imaging device of claim 1 , further comprising:
a microlens; and
a color filter,
wherein the color filter is disposed between the microlens and the semiconductor substrate in a cross-section view.

13. The imaging device of claim 1 , further comprising:
a selection transistor,
wherein the photoelectric conversion portions share the selection transistor.

14. An apparatus comprising:
an imaging device including:
a semiconductor substrate having a first side as a light-incident side and a second side opposite to the first side;
a plurality of photoelectric conversion portions disposed in the semiconductor substrate;
a trench disposed between photoelectric conversion portions of the plurality of photoelectric conversion portions;
a wiring layer disposed adjacent to the second side of the semiconductor substrate;
a first material disposed in the trench;
a second material disposed in the trench;
a silicon oxide layer disposed above the first material, the second material, and the first side of the semiconductor substrate;
a light-shielding portion disposed above the silicon oxide layer,
wherein the first material is selected from the group consisting of SiN, SiO2, SiCN, and SiOC, and
wherein the second material is selected from the group consisting of oxides of elemental hafnium, zirconium, aluminum, tantalum, titanium, magnesium, yttrium, and lanthanoids; and

at least one lens configured to guide light toward the light-incident side of the semiconductor substrate.

15. The imaging device of claim 1 , wherein the second material covers an inner portion of the trench in a cross-section view.

16. The imaging device of claim 1 , wherein a width of the trench is larger than a thickness of the silicon oxide layer in a cross-section view.

17. The apparatus of claim 14 , wherein the light-shielding portion is disposed at locations corresponding to the trench.

18. The apparatus of claim 17 , further comprising a color filter, wherein the light-shielding portion is disposed between the trench and the color filter.

19. The apparatus of claim 14 , further comprising a color filter, wherein the light-shielding portion is disposed between the silicon oxide layer and the color filter.

20. The apparatus of claim 14 , wherein portions of the first material and the second material are substantially planar with a surface of the first side of the semiconductor substrate.

Assignees

• Sony Corp

Inventors

• Miyanami Yuki

Classifications

• H04N9/03

  Circuitry for demodulating colour component signals modulated spatially by colour striped filters by frequency separation · CPC title

• H04N25/778

  comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself · CPC title

• H01L27/14636

  Electricity · mapped topic

• H01L27/14623

  Electricity · mapped topic

• H01L27/14612

  Electricity · mapped topic