Sensor and fabrication method thereof
US-2024353525-A1 · Oct 24, 2024 · US
Semiconductor film and field effect transistor having semiconductor and polymer portions stacked adjacent each other
US10256164B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10256164-B2 |
| Application number | US-201515506271-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 28, 2015 |
| Priority date | Aug 29, 2014 |
| Publication date | Apr 9, 2019 |
| Grant date | Apr 9, 2019 |
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- Title
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Abstract
Official abstract text for this publication.
The present invention provides a semiconductor film, a field effect transistor, and a method of fabricating the semiconductor film that has one or two or more semiconductor portions, which are formed from a semiconductor material, and one or two or more polymer portions, which are formed from a polymer material. The semiconductor portion and the polymer portion are adjacent to each other and are integrated.
First claim
Opening claim text (preview).
The invention claimed is: 1. A semiconductor film comprising: a semiconductor portion that is formed from an organic semiconductor material and comprises crystals and has a width of 1 mm or more; and a polymer portion that is formed from a polymer material, wherein: each of the semiconductor portion and the polymer portion has a layer shape, and the semiconductor portion and the polymer portion are stacked adjacent to each other in a stacking direction, an angle between orientation axes of the crystals is 10 degrees or less, and each crystal has a length of 200 μm or more. 2. The semiconductor film according to claim 1 , wherein the semiconductor portion is a single crystal. 3. A field effect transistor comprising the semiconductor film according to claim 1 .
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Package configurations · CPC title
Shapes or dispositions thereof · CPC title
- H10W70/69Primary
Insulating materials thereof · CPC title
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US10256164B2 cover?
- The present invention provides a semiconductor film, a field effect transistor, and a method of fabricating the semiconductor film that has one or two or more semiconductor portions, which are formed from a semiconductor material, and one or two or more polymer portions, which are formed from a polymer material. The semiconductor portion and the polymer portion are adjacent to each other and ar…
- Who is the assignee on this patent?
- Univ Tokyo
- What technology area does this patent fall under?
- Primary CPC classification H10W70/69. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Apr 09 2019 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).