Transfer substrate for forming metal wiring and method for forming metal wiring with the transfer substrate

Patent metadata

Field	Value
Publication number	US-10256113-B2
Application number	US-201214354134-A
Country	US
Kind code	B2
Filing date	Nov 8, 2012
Priority date	Nov 18, 2011
Publication date	Apr 9, 2019
Grant date	Apr 9, 2019

Abstract

A transfer substrate for transferring a metal wiring material to a transfer target including a substrate, at least one metal wiring material formed on the substrate, at least one coating layer formed on a surface of the metal wiring material, and an underlying metal film formed between the substrate and the metal wiring material, in which the metal wiring material is a compact formed by sintering metal powder such as gold powder having a purity of 99.9 wt % or more and an average particle size of 0.01 μm to 1.0 μm, and the coating layer is a predetermined metal such as gold or an alloy having a different composition from that of the metal wiring material and has a total thickness of 1 μm or less, and the metal underlying film is made of a predetermined metal such as gold or an alloy. The transfer substrate can lower heating temperature on the transfer target side.

First claim

What is claimed is:

1. A metal wiring formation method comprising:
(a) providing a transfer substrate for transferring a metal wiring material to a transfer target, said transfer substrate comprising:
a substrate;
at least one metal wiring material formed on the substrate;
at least one coating layer formed on a surface of the metal wiring material; and
an underlying metal film formed between the substrate and the metal wiring material, wherein the metal wiring material comprises a composition formed by sintering one or more kinds of metal powder having a purity of 99.9 wt % or more and an average particle size of 0.01 μm to 1.0 μm selected from gold powder, silver powder, platinum powder, palladium powder and copper powder;
the coating layer comprises one or more of any metal of gold, silver, platinum, palladium, ruthenium, rhodium, iridium, chromium, titanium, tungsten, tantalum, nickel, copper and zirconium or an alloy thereof;
the coating layer comprises a metal or an alloy having a different composition from the composition of the metal wiring material and has a total thickness of 1 μm or less; and
the underlying metal film comprises one or more of any metal of gold, silver, platinum, palladium, ruthenium, rhodium, iridium, chromium, titanium, tungsten, tantalum, nickel, copper and zirconium or an alloy thereof;
(b) stacking the transfer substrate so as to be opposite to a transfer target;
(c) heating the transfer substrate and the transfer target; and
(d) pressing the transfer substrate to join and transfer the metal wiring material to the transfer target, wherein a heating temperature of the transfer substrate is set to 80 to 200° C.; and a heating temperature of the transfer target is set to 80 to 300° C.,
wherein a pressure at the time of pressing the transfer substrate is set to 0.1 to 1.5 times the yield strength of the metal wiring material.

2. The metal wiring formation method according to claim 1 , comprising: forming an electrode film made of a metal containing a metal constituting the metal wiring material of the transfer substrate on the transfer target; and then transferring the metal wiring material.

3. The metal wiring formation method according to claim 1 , wherein the metal wiring material of the transfer substrate is manufactured by applying and sintering a metal paste composed of an organic solvent and one or more kinds of metal powder having a purity of 99.9 wt % or more and an average particle size of 0.01 μm to 1.0 μm selected from gold powder, silver powder, platinum powder, palladium powder and copper powder.

4. The metal wiring formation method according to claim 1 wherein the underlying metal film comprises a metal or an alloy having a different composition from that of the metal wiring material.

5. The metal wiring formation method according to claim 4 , comprising: forming an electrode film made of a metal containing a metal constituting the metal wiring material of the transfer substrate on the transfer target; and then transferring the metal wiring material.

6. The metal wiring formation method according to claim 1 wherein the underlying metal film has a thickness of 1 to 100 nm.

7. The metal wiring formation method according to claim 6 , comprising: forming an electrode film made of a metal containing a metal constituting the metal wiring material of the transfer substrate on the transfer target; and then transferring the metal wiring material.

8. The metal wiring formation method according to claim 4 wherein the underlying metal film has a thickness of 1 to 100 nm.

9. The metal wiring formation method according to claim 8 , comprising: forming an electrode film made of a metal containing a metal constituting the metal wiring material of the transfer substrate on the transfer target; and then transferring the metal wiring material.

Assignees

• Tanaka Precious Metal Ind

Inventors

• Ogashiwa Toshinori
• Kurita Masaaki
• Nishimori Takashi
• Kanehira Yukio

Classifications

• H10W74/00

  Encapsulations, e.g. protective coatings · CPC title

• H10W72/01925

  in solid form · CPC title

• H10W72/01904

  using temporary auxiliary members, e.g. using sacrificial coatings or handle substrates · CPC title

• H10W72/01261

  Chemical or physical modification, e.g. by sintering or anodisation (patterning H10W72/01251) · CPC title

• H10W72/01225

  in solid form, e.g. by using a powder or by stud bumping · CPC title