Optical detector based on an antireflective structured dielectric surface and a metal absorber

Patent metadata

Field	Value
Publication number	US-10254169-B2
Application number	US-201515508951-A
Country	US
Kind code	B2
Filing date	Aug 6, 2015
Priority date	Sep 9, 2014
Publication date	Apr 9, 2019
Grant date	Apr 9, 2019

Abstract

The present invention provides an optical detector device, including: a metal absorber layer; and a dielectric cover layer coupled to the metal absorber layer, wherein the dielectric cover layer includes one or more antireflective structured surfaces. The optical detector device further includes one or more of a passive substrate layer and an active thermoelectric element layer coupled to the metal absorber layer opposite the dielectric cover layer. The one or more antireflective structured surfaces each utilize a random pattern.

First claim

What is claimed is:

1. An optical detector device, comprising:
a metal absorber layer; and
a dielectric cover layer coupled to the metal absorber layer, wherein the dielectric cover layer comprises one or more antireflective structured surfaces, wherein the one or more antireflective structured surfaces comprise a plurality of randomly distributed needle-like structures each having a random height and a width between 1/10 and ⅓ of a wavelength of incident radiation, wherein a roughness of the randomly distributed needle-like structures has a Gaussian distribution function histogram with a maximum-to-minimum value (R z ) extent of a wavelength in size and a root-mean-square (R q ) value between ⅓ and ½ of a wavelength.

2. The optical detector device of claim 1 , further comprising one or more of a passive substrate layer and an active thermoelectric element layer coupled to the metal absorber layer opposite the dielectric cover layer.

3. The optical detector device of claim 2 , wherein the passive substrate layer comprises one or more of Fused Silica (FS), an optical glass, and Borosilicate glass.

4. The optical detector device of claim 2 , wherein the active thermoelectric element layer comprises one or more of Indium Antimonide (InSb), Lead Selenide (Pb Se), Lead Sulfide (PbS), and Mercury-Cadmium Telluride (HgCdTe).

5. The optical detector device of claim 1 , further comprising a dielectric insulator layer disposed adjacent to the metal absorber layer opposite the dielectric cover layer.

6. The optical detector device of claim 1 , further comprising a metal reflector layer disposed adjacent to the metal absorber layer opposite the dielectric cover layer.

7. The optical detector device of claim 1 , wherein the metal absorber layer comprises one or more of Nickel (Ni), Chrome (Cr), Silver (Ag), and Gold (Au).

8. The optical detector device of claim 1 , wherein the dielectric cover layer comprises one or more of Fused Silica (FS), an optical glass, and Borosilicate glass.

9. The optical detector device of claim 1 , further comprising one or more electrical contacts coupled to the metal absorber layer.

10. The optical detector device of claim 1 , wherein the dielectric cover layer comprises a pair of antireflective structured surfaces located on opposed surfaces of the dielectric cover layer.

11. An optical detector fabrication method, comprising:
forming one or more antireflective structured surfaces on one or more surfaces of a dielectric cover layer, wherein the one or more antireflective structured surfaces comprise a plurality of randomly distributed needle-like structures each having a random height and a width between 1/10 and ⅓ of a wavelength of incident radiation, wherein a roughness of the randomly distributed needle-like structures has a Gaussian distribution function histogram with a maximum-to-minimum value (R z ) extent of a wavelength in size and a root-mean-square (R q ) value between ⅓ and ½ of a wavelength; and
disposing a metal absorber layer on one surface of the dielectric cover layer.

12. The optical detector fabrication method of claim 11 , further comprising coupling one or more of a passive substrate layer and an active thermoelectric element layer to the metal absorber layer opposite the dielectric cover layer.

13. The optical detector fabrication method of claim 12 , wherein the passive substrate layer comprises one or more of Fused Silica (FS), an optical glass, and Borosilicate glass.

14. The optical detector fabrication method of claim 12 , wherein the active thermoelectric element layer comprises one or more of Indium Antimonide (InSb), Lead Selenide (Pb Se), Lead Sulfide (PbS), and Mercury-Cadmium Telluride (HgCdTe).

15. The optical detector fabrication method of claim 11 , further comprising disposing a dielectric insulator layer adjacent to the metal absorber layer opposite the dielectric cover layer.

16. The optical detector fabrication method of claim 11 , further comprising disposing a metal reflector layer adjacent to the metal absorber layer opposite the dielectric cover layer.

17. The optical detector fabrication method of claim 11 , wherein the metal absorber layer comprises one or more of Nickel (Ni), Chrome (Cr), Silver (Ag), and Gold (Au).

18. The optical detector fabrication method of claim 11 , wherein the dielectric cover layer comprises one or more of Fused Silica (FS), an optical glass, and Borosilicate glass.

19. The optical detector fabrication method of claim 11 , further comprising coupling one or more electrical contacts to the metal absorber layer.

20. The optical detector fabrication method of claim 11 , wherein forming the one or more antireflective structured surfaces on the one or more surfaces of the dielectric cover layer comprises forming a pair of antireflective structured surfaces on opposed surfaces of the dielectric cover layer.

Assignees

• Univ North Carolina Charlotte
• Us Gov Sec Navy

Inventors

• Poutous Menelaos K
• Aggarwal Ishwar D
• Sanghera Jasbinder S
• Busse Lynda E
• Shaw Brandon L

Classifications

• H01L35/10

  Electricity · mapped topic

• G01J2005/068

  Physics · mapped topic

• G01J5/12

  using thermoelectric elements, e.g. thermocouples · CPC title

• G01J5/0803

  Arrangements for time-dependent attenuation of radiation signals · CPC title

• G01J5/10

  using electric radiation detectors · CPC title