Bipolar transistor with superjunction structure

Patent metadata

Field	Value
Publication number	US-10249746-B2
Application number	US-201715856426-A
Country	US
Kind code	B2
Filing date	Dec 28, 2017
Priority date	Oct 27, 2015
Publication date	Apr 2, 2019
Grant date	Apr 2, 2019

Abstract

A superjunction bipolar transistor includes an active transistor cell area that includes active transistor cells electrically connected to a first load electrode at a front side of a semiconductor body. A superjunction area overlaps the active transistor cell area and includes a low-resistive region and a reservoir region outside of the low-resistive region. The low-resistive region includes a first superjunction structure with a first vertical extension with respect to a first surface at the front side of the semiconductor body. The reservoir region includes no superjunction structure such that the reservoir region includes the semiconductor body that extends from a region located at the first surface to a drain region.

First claim

What is claimed is:

1. A superjunction bipolar transistor, comprising:
an active transistor cell area comprising active transistor cells electrically connected to a first load electrode at a front side of a semiconductor body;
a superjunction area overlapping the active transistor cell area, the superjunction area comprising a low-resistive region and a reservoir region outside of the low-resistive region, wherein the low-resistive region comprises a first superjunction structure with a first vertical extension with respect to a first surface at the front side of the semiconductor body, and wherein the reservoir region comprises no superjunction structure such that the reservoir region comprises the semiconductor body that extends from a region located at the first surface to a drain region; and
a collector structure directly electrically connected to a second load electrode at a reverse side opposite to the front side and forming a continuous layer directly adjoining a second surface of the semiconductor body opposite to the first surface, wherein the collector structure forms a pn junction with a drift structure that comprises the first superjunction structure.

2. The superjunction bipolar transistor of claim 1 , wherein the region located at the first surface includes at least one active transistor cell.

3. The superjunction bipolar transistor of claim 1 , further comprising:
recombination centers in the semiconductor body, wherein a mean density of the recombination centers in the reservoir region is lower than a mean density of the recombination centers outside of the reservoir region.

4. The superjunction bipolar transistor of claim 1 , wherein:
the reservoir region is completely formed in the active transistor cell area.

5. The superjunction bipolar transistor of claim 1 , wherein:
at least a portion of the reservoir region is in a vertical projection of a gate conductor structure.

6. The superjunction bipolar transistor of claim 1 , wherein:
the reservoir region comprises a set of spatially separated sub-regions.

7. The superjunction bipolar transistor of claim 1 , wherein:
the superjunction bipolar transistor is or includes an insulated gate bipolar transistor.

8. The superjunction bipolar transistor of claim 1 , wherein the low-resistive region encircles the reservoir region.

9. The superjunction bipolar transistor of claim 1 , wherein the region located at the first surface includes an anode zone.

10. The superjunction bipolar transistor of claim 1 , further comprising:
a reservoir zone in the reservoir region, wherein a mean net dopant concentration of the semiconductor body in the reservoir zone is lower than a mean net dopant concentration in first areas of the first superjunction structure, the first areas alternating with oppositely doped second areas of the first superjunction structure along at least one horizontal direction parallel to the first surface.

11. The superjunction bipolar transistor of claim 10 , wherein:
the mean net dopant concentration in the reservoir zone is at most a fifth of the mean net dopant concentration in the first areas of the first superjunction structure.

12. The superjunction bipolar transistor of claim 10 , wherein:
the first superjunction structure and the reservoir zone are formed in a drain structure of the semiconductor body between the transistor cells and a collector structure.

13. The superjunction bipolar transistor of claim 10 , further comprising:
recombination centers in the semiconductor body, wherein a mean density of the recombination centers in the reservoir zone is lower than a mean density of the recombination centers outside of the reservoir zone.

14. A superjunction bipolar transistor, comprising:
an active transistor cell area comprising active transistor cells electrically connected to a first load electrode at a front side of a semiconductor body; and
a superjunction area overlapping the active transistor cell area, the superjunction area comprising a low-resistive region and a reservoir region outside of the low-resistive region, wherein the low-resistive region comprises a first superjunction structure with a first vertical extension with respect to a first surface at the front side of the semiconductor body, and wherein the reservoir region comprises no superjunction structure such that the reservoir region comprises the semiconductor body that extends from the first surface to a drain region; and
a collector structure directly electrically connected to a second load electrode at a reverse side opposite to the front side and comprising insulated gate bipolar transistors (IGBT) zones and oppositely doped diode cathode zones, the IGBT zones and the diode cathode zones directly adjoining a second surface of the semiconductor body opposite to the first surface.

15. The superjunction bipolar transistor of claim 14 , wherein:
the diode cathode zones are exclusively in the reservoir region.

16. The superjunction bipolar transistor of claim 14 , wherein:
the IGBT zones are exclusively outside of the reservoir region.

17. The superjunction bipolar transistor of claim 14 , wherein the low-resistive region encircles the reservoir region.

18. The superjunction bipolar transistor of claim 14 , further comprising:
diode anode zones directly adjoining to the first surface in the reservoir region.

19. The superjunction bipolar transistor of claim 18 , wherein:
the active transistor cells are exclusively outside of the reservoir region.

20. The superjunction bipolar transistor of claim 14 , further comprising:
counter-doped islands of a conductivity type of the collector structure or of the IGBT zones and formed at a distance to the collector structure between the first superjunction structure and the collector structure.

21. The superjunction bipolar transistor of claim 20 , wherein:
a mean density of the counter-doped islands in the reservoir region is lower than a mean density of the counter-doped islands outside of the reservoir region.

Assignees

• Infineon Technologies Ag

Inventors

• Pfirsch Frank Dieter
• Niedernostheide Franz-Josef
• Schulze Hans-Joachim
• Voss Stephan

Classifications

• H01L29/157

  Electricity · mapped topic

• H01L29/1608

  Electricity · mapped topic

• H01L29/0623

  Electricity · mapped topic

• H01L29/0634

  Electricity · mapped topic

• H01L29/7397

  Electricity · mapped topic