C12A7 electride thin film fabrication method and C12A7 electride thin film

Patent metadata

Field	Value
Publication number	US-10249402-B2
Application number	US-201414567047-A
Country	US
Kind code	B2
Filing date	Dec 11, 2014
Priority date	Jun 20, 2012
Publication date	Apr 2, 2019
Grant date	Apr 2, 2019

Abstract

A C12A7 electride thin film fabrication method includes a step of forming an amorphous C12A7 electride thin film on a substrate by vapor deposition under an atmosphere with an oxygen partial pressure of less than 0.1 Pa using a target made of a crystalline C12A7 electride having an electron density within a range of 2.0×10 18 cm −3 to 2.3×10 21 cm −3 .

First claim

What is claimed is:

1. A C12A7 electride thin film fabrication method, comprising:
forming an amorphous C12A7 electride thin film on a substrate by vapor deposition under an atmosphere including oxygen, hydrogen, and a sputtering gas using a target made of a crystalline C12A7 electride having an electron density within a range of 2.0×10 18 cm −3 to 2.3×10 21 cm −3 ,
wherein;
an oxygen partial pressure of the oxygen in the atmosphere is less than or equal to 0.0001 Pa, and a hydrogen partial pressure of the hydrogen in the atmosphere of less than 0.004 Pa; and
when t (m) denotes a distance between the substrate and the target, and d(m) denotes a diameter of a gas molecule of a sputtering gas, a sputtering gas pressure P (Pa) of the sputtering gas in the atmosphere is adjusted to satisfy:
8.9×10 −22 /( td 2 )< P< 4.5×10 −20 /( td 2 ).

2. The fabrication method as claimed in claim 1 , wherein a surface polishing process is performed on the target.

3. The fabrication method as claimed in claim 1 , wherein the vapor deposition corresponds to sputtering.

4. The fabrication method as claimed in claim 3 , wherein the sputtering is performed using at least one type of gas selected from a group consisting of He (helium), Ne (neon), N 2 (nitrogen), Ar (argon), NO (nitric oxide), Kr (krypton), and Xe (xenon).

5. The fabrication method as claimed in claim 1 , wherein a pre-sputtering process is performed on the target.

6. The fabrication method as claimed in claim 5 , wherein the pre-sputtering process is performed using at least one type of gas selected from a group consisting of He (helium), Ne (neon), N 2 (nitrogen), Ar (argon), and NO (nitric oxide).

7. The fabrication method as claimed in claim 1 , wherein the amorphous C12A7 electride thin film has a thickness less than or equal to 10 μm.

8. The fabrication method as claimed in claim 1 , wherein the substrate is used in a non-heated state.

9. The fabrication method as claimed in claim 1 , wherein the substrate corresponds to a glass substrate.

10. A fabrication method, comprising:
forming an amorphous thin film by vapor deposition under an atmosphere including oxygen, hydrogen, and a sputtering gas using a target made of a crystalline C12A7 electride having an electron density within a range of 2.0×10 18 cm −3 to 2.3×10 21 cm −3 ,
wherein;
an oxygen partial pressure of the oxygen in the atmosphere is less than or equal to 0.0001 Pa, and a hydrogen partial pressure of the hydrogen in the atmosphere of less than 0.004 Pa; and
when t (m) denotes a distance between the substrate and the target, and d(m) denotes a diameter of a gas molecule of a sputtering gas, a sputtering gas pressure P (Pa) of the sputtering gas in the atmosphere is adjusted to satisfy:
8.9×10 −22 /( td 2 )< P< 4.5×10 −20 /( td 2 ).

11. The fabrication method as claimed in claim 1 , wherein, when the sputtering gas comprises at least two gases, a sum of partial pressures of the at least two gases is adjusted to satisfy the sputtering gas pressure P.

12. The fabrication method as claimed in claim 10 , wherein, when the sputtering gas comprises at least two gases, a sum of partial pressures of the at least two gases is adjusted to satisfy the sputtering gas pressure P.

Assignees

• Tokyo Inst Tech
• Asahi Glass Co Ltd
• Japan Science & Tech Agency
• Agc Inc

Inventors

• Hosono Hideo
• Toda Yoshitake
• Hayashi Katsuro
• Ito Setsuro
• Watanabe Satoru
• Miyakawa Naomichi
• Watanabe Toshinari
• Ito Kazuhiro

Classifications

• C04B2235/664

  Reductive annealing · CPC title

• C04B2235/3208

  Calcium oxide or oxide-forming salts thereof, e.g. lime · CPC title

• H01L51/5221

  Electricity · mapped topic

• C04B35/44

  based on aluminates · CPC title

• H01B1/08 Primary

  oxides · CPC title