RAMO4 substrate

Patent metadata

Field	Value
Publication number	US-10246796-B2
Application number	US-201715429164-A
Country	US
Kind code	B2
Filing date	Feb 10, 2017
Priority date	Mar 25, 2016
Publication date	Apr 2, 2019
Grant date	Apr 2, 2019

Abstract

A RAMO 4 substrate containing an RAMO 4 base material part containing a single crystal represented by the general formula RAMO 4 (wherein R represents one or a plurality of trivalent elements selected from a group of elements including: Sc, In, Y, and a lanthanoid element, A represents one or a plurality of trivalent elements selected from a group of elements including: Fe(III), Ga, and Al, and M represents one or a plurality of divalent elements selected from a group of elements including: Mg, Mn, Fe(II), Co, Cu, Zn, and Cd), the RAMO 4 base material part having a beveled portion at an edge portion thereof.

First claim

What is claimed is:

1. A RAMO 4 substrate comprising a RAMO 4 base material part containing a single crystal represented by the general formula RAMO 4 , where R represents one or a plurality of trivalent elements selected from a group of elements including: Sc, In, Y, and a lanthanoid element, A represents one or a plurality of trivalent elements selected from a group of elements including: Fe(III), Ga, and Al, and M represents one or a plurality of divalent elements selected from a group of elements including: Mg, Mn, Fe(II), Co, Cu, Zn, and Cd, wherein:
the RAMO 4 base material part has a beveled portion at an edge portion of the RAMO 4 base material part,
the RAMO 4 base material part has a principal surface having an off angle θ with respect to a cleavage surface of the single crystal,
the beveled portion contains a first region having an angle θ 1 with respect to the principal surface, and a second region formed outside the first region, having an angle θ 2 with respect to the principal surface, and
the angles θ, θ 1 , and θ 2 satisfy the relationship θ 1 <θ<θ 2 .

2. The RAMO 4 substrate according to claim 1 , wherein
the off angle θ satisfies 0.09 deg≤θ≤45 deg, and
the angles θ and θ 2 satisfy θ 2 <θ+45 deg.

3. The RAMO 4 substrate according to claim 1 , wherein
assuming that w 1 shows a length of the first region in a direction in parallel to the principal surface, and
w 2 shows a length of the second region in a direction in parallel to the principal surface,
w 1 is at least 0.1 mm and no greater than 5 mm, and w 2 is at least 0.1 mm and no greater than 5 mm.

4. The RAMO 4 substrate according to claim 1 , wherein
the principal surface does not have irregularities of 500 nm or more.

5. The RAMO 4 substrate according to claim 1 , wherein
the single crystal contains ScAlMgO 4 .

Assignees

• Panasonic Ip Man Co Ltd

Inventors

• Tashiro Isao
• Kataoka Hidenao
• Okayama Yoshio
• Yokoyama Nobuyuki
• Takasu Yoshifumi

Classifications

• H10W70/68

  Shapes or dispositions thereof · CPC title

• H10W70/698 Primary

  Semiconductor materials that are electrically insulating, e.g. undoped silicon · CPC title

• C30B29/22 Primary

  Complex oxides · CPC title

• C01F17/34

  Aluminates, e.g. YAlO3 or Y3-xGdxAl5O12 · CPC title

• C01F17/0025

  Chemistry & Metallurgy · mapped topic