Method and apparatus for forming silicon film and storage medium
US-2017287778-A1 · Oct 5, 2017 · US
Method for forming amorphous thin film
US10246773B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10246773-B2 |
| Application number | US-201615568536-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 9, 2016 |
| Priority date | May 8, 2015 |
| Publication date | Apr 2, 2019 |
| Grant date | Apr 2, 2019 |
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Abstract
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A method for forming an amorphous thin film comprises: forming a seed layer on a surface of a base by supplying aminosilane-based gas on the base; forming the first boron-doped amorphous thin film by supplying the first source gas including boron-based gas on the seed layer; and forming the second boron-doped amorphous thin film by supplying the second source gas including boron-based gas on the first amorphous thin film.
First claim
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What is claimed is: 1. A method for forming an amorphous thin film, the method comprising: forming a seed layer on a surface of a base by supplying aminosilane-based gas on the base; and forming the amorphous thin film having a predetermined thickness on the seed layer, wherein said forming the amorphous thin film comprises: forming a first boron-doped amorphous thin film having a first thickness on the seed layer; and forming a second boron-doped amorphous thin film having a second thickness on the first boron-doped amorphous thin film, and wherein a first source gas used in said forming the first boron-doped amorphous thin film includes boron-based gas and silane-based gas and be supplied to the seed layer, and a second source gas used in said forming the second boron-doped amorphous thin film includes the boron-based gas, the second source gas being different from the first source gas and being supplied to the first boron-doped amorphous thin film. 2. The method of claim 1 , wherein the boron-based gas is B2H6. 3. The method of claim 2 , wherein the silane-based gas included in the first source gas is SiH4. 4. The method of claim 3 , wherein silane-based gas further included in the second source gas is Si2H6 and the second amorphous thin film is a silicon thin film, the forming the first amorphous thin film is performed at 300° C., and the forming the second amorphous thin film is performed at 400° C. 5. The method of claim 3 , wherein silane-based gas further included in the second source gas is a mixed gas of SiH4 and Si2H6 at a ratio of 4:1, and the second amorphous thin film is a silicon thin film. 6. The method of claim 3 , wherein the second source gas further includes silane-based gas and germanium-based gas, and the silane-based gas and germanium-based gas included in the second source gas are mixed at a ratio of 1:2. 7. The method of claim 3 , wherein silane-based gas further included in the second source gas is SiH4 and the second amorphous thin film is a silicon thin film, the first source gas includes N2 15000 sccm, and the second source gas includes N2 5000 sccm and H2 3000 sccm. 8. The method of claim 3 , wherein the second source gas further includes germanium-based gas, and the second amorphous thin film is a germanium thin film. 9. The method of claim 1 , wherein the silane-based gas included in the first source gas is SiH4. 10. The method of claim 9 , wherein silane-based gas further included in the second source gas is Si2H6 and the second amorphous thin film is a silicon thin film, the forming the first amorphous thin film is performed at 300° C., and the forming the second amorphous thin film is performed at 400° C. 11. The method of claim 9 , wherein silane-based gas further included in the second source gas is a mixed gas of SiH4 and Si2H6 at a ratio of 4:1, and the second amorphous thin film is a silicon thin film. 12. The method of claim 9 , wherein the second source gas further includes silane-based gas and germanium-based gas, and the silane-based gas and germanium-based gas included in the second source gas are mixed at a ratio of 1:2. 13. The method of claim 9 , wherein silane-based gas further included in the second source gas is SiH4 and the second amorphous thin film is a silicon thin film, the first source gas includes N2 15000 sccm, and the second source gas includes N2 5000 sccm and H2 3000 sccm. 14. The method of claim 9 , wherein the second source gas further includes germanium-based gas, and the second amorphous thin film is a germanium thin film. 15. The method of claim 1 , wherein the first thickness is 20 to 50 Å, the second thickness is 100 Å or more. 16. The method of claim 1 , wherein the predetermined thickness is 200 Å or more.
Assignees
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Classifications
Amorphous · CPC title
- H10P14/3444Primary
P-type · CPC title
Silicon, silicon germanium or germanium · CPC title
Silicon, silicon germanium or germanium · CPC title
of highly doped semiconductor materials, e.g. polysilicon layers or amorphous silicon layers · CPC title
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- What does patent US10246773B2 cover?
- A method for forming an amorphous thin film comprises: forming a seed layer on a surface of a base by supplying aminosilane-based gas on the base; forming the first boron-doped amorphous thin film by supplying the first source gas including boron-based gas on the seed layer; and forming the second boron-doped amorphous thin film by supplying the second source gas including boron-based gas on th…
- Who is the assignee on this patent?
- Eugene Technology Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification H10P14/3444. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Apr 02 2019 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).