Semiconductor device and projection-type display unit

Patent metadata

Field	Value
Publication number	US-10241370-B2
Application number	US-201615774147-A
Country	US
Kind code	B2
Filing date	Oct 27, 2016
Priority date	Nov 18, 2015
Publication date	Mar 26, 2019
Grant date	Mar 26, 2019

Abstract

A semiconductor device according to an embodiment of the disclosure includes: a first substrate; a TFT element provided on the first substrate with a first interlayer insulating layer interposed therebetween, and including a semiconductor layer and a gate electrode that is provided on the semiconductor layer with a gate insulating layer interposed therebetween; and a second substrate disposed to face the first substrate. The gate electrode includes a first electroconductive film and a second electroconductive film that has a light-shielding property in order from side of the semiconductor layer. The second electroconductive film extends from a side face to a bottom face of each of a pair of openings that are provided to interpose the semiconductor layer.

First claim

The invention claimed is:

1. A semiconductor device comprising:
a first substrate;
a TFT element provided on the first substrate with a first interlayer insulating layer interposed therebetween, the TFT element including a semiconductor layer and a gate electrode that is provided on the semiconductor layer with a gate insulating layer interposed therebetween; and
a second substrate disposed to face the first substrate, wherein
the gate electrode includes a first electroconductive film and a second electroconductive film that has a light-shielding property in order from side of the semiconductor layer, and
the second electroconductive film extends from a side face to a bottom face of each of a pair of openings that are provided to interpose the semiconductor layer.

2. The semiconductor device according to claim 1 , further comprising a scanning line between the first substrate and the first interlayer insulating layer, wherein
the pair of openings each penetrate the first interlayer insulating layer and the gate insulating layer, and
the second electroconductive film is electrically coupled to the scanning line at the bottom face of each of the pair of openings.

3. The semiconductor device according to claim 1 , wherein the second electroconductive film comprises a laminated film that includes a plurality of layers.

4. The semiconductor device according to claim 1 , wherein the second electroconductive film is formed using a low refractive index material.

5. The semiconductor device according to claim 1 , further comprising a light-shielding film that is provided on the TFT element with a second interlayer insulating layer interposed therebetween.

6. The semiconductor device according to claim 5 , wherein the light-shielding film is provided in the LDD region.

7. The semiconductor device according to claim 3 , wherein the light-shielding film extends from a side face to a bottom face of a concave part formed by each of the pair of openings.

8. The semiconductor device according to claim 5 , wherein a total film thickness of the second electroconductive film, the second interlayer insulating layer, and the light-shielding film is smaller than a minor axis of each of the pair of openings.

9. The semiconductor device according to claim 1 , wherein the semiconductor layer includes a LDD region.

10. The semiconductor device according to claim 9 , wherein the pair of openings are provided to interpose the LDD region of the semiconductor layer.

11. A projection-type display unit comprising:
a first substrate;
a TFT element provided on the first substrate with a first interlayer insulating layer interposed therebetween, the TFT element including a semiconductor layer and a gate electrode that is provided on the semiconductor layer with a gate insulating layer interposed therebetween;
a second substrate disposed to face the first substrate; and
a display layer provided between the first substrate and the second substrate, wherein
the gate electrode includes a first electroconductive film and a second electroconductive film that has a light-shielding property in order from side of the semiconductor layer, and
the second electroconductive film extends from a side face to a bottom face of each of a pair of openings that are provided to interpose the semiconductor layer.

Assignees

• Sony Corp

Inventors

• Abe Kazuki
• Inage Shinya
• Oda Nobuhiko
• Kaida Masahiro
• Nagura Moriyasu

Classifications

• G02F1/136209 Primary

  Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element · CPC title

• H01L29/78621

  Electricity · mapped topic

• G02F1/1368

  in which the switching element is a three-electrode device {(G02F1/136277 takes precedence)} · CPC title

• H10D86/441

  Interconnections, e.g. scanning lines · CPC title

• H10D86/60

  wherein the TFTs are in active matrices · CPC title