Garnet material, method for its manufacturing and radiation-emitting component comprising the garnet material

Patent metadata

Field	Value
Publication number	US-10240086-B2
Application number	US-201514829118-A
Country	US
Kind code	B2
Filing date	Aug 18, 2015
Priority date	Jul 22, 2010
Publication date	Mar 26, 2019
Grant date	Mar 26, 2019

Abstract

A radiation-emitting component comprising a ceramic material, comprising a garnet having the composition represented by the formula A3-xB5O12:Dx and a barium-containing oxide. In the garnet A3-xB5O12:Dx, A is selected from lutetium, yttrium, gadolinium, terbium, scandium, another rare earth metal or mixtures thereof. B is selected from aluminum, scandium, gallium, indium, boron or mixtures thereof. D is at least one dopant selected from chromium, manganese and rare earth metals, particularly cerium, praseodymium or gadolinium. The dopant is present with x is 0≤x≤2.

First claim

We claim:

1. A radiation-emitting component comprising a converter chip that consists of a ceramic material, which comprises a garnet having the structure A 3-x B 5 O 12 :D x and a barium-containing oxide of the formula Ba z Al 2y O z+3y ,
wherein in the garnet A 3-x B 5 O 12 :D x :
A is selected from the group consisting of lutetium, yttrium, gadolinium, terbium, scandium, another rare earth metal, and mixtures thereof,
B is selected from the group consisting of aluminum, scandium, gallium, indium, boron, and mixtures thereof,
D is at least one dopant selected from chromium, manganese and rare earth metals, and 0≤x≤2,
wherein in the barium aluminum oxide Ba z Al 2y O z+3y , z and y are integers >0, and
wherein in the converter chip which consists of the ceramic material, the amount of barium is 0.01 to 2.5 wt %, and the garnet material shows a porosity of 0.001 to 2 vol % of the entire volume of the material,
wherein the barium aluminium oxide is present as separate phases different from the phase of the A3-xB5O12:Dx, at least 99 wt % of the total amount of barium is present in the separate phases, over 95% of the barium containing phases have a diameter smaller than 5 μm and the grain size of the garnet is 10 to 20 μm, the converter chip which consists of the ceramic material is highly transparent and the total forward transmittance at a wavelength of 2000 nm is at least 66%, and the converter chip which consists of the ceramic material converts at least partially a primary radiation of a first wavelength in a secondary radiation of a second wavelength that is longer than the first wavelength, and
wherein the radiation-emitting component has a luminous efficacy of better than 290 lm/W.

2. The radiation-emitting component according to claim 1 , wherein in the garnet A 3 -xB 5 O 12 :D x
A is selected from the group consisting of lutetium, yttrium, gadolinium, terbium, scandium, and mixtures thereof,
B is aluminum or a mixture of aluminum and gallium, or a mixture of aluminum and scandium,
D is selected from the group consisting of cerium, praseodymium, and a mixture thereof, and
x is 0<x≤0.15.

3. The radiation-emitting component according to claim 1 , wherein in the ceramic material at least a part of the barium-containing oxides forms a separate phase of BaAl 2 O 4 or BaAl 12 O 19 .

4. The radiation-emitting component according to claim 1 , wherein the ceramic material comprises an amount of at least one additional metal oxide, wherein the at least one additional metal oxide is selected from the group consisting of oxides of calcium, magnesium, strontium, boron, silicon, zirconium, aluminum, scandium, and mixtures thereof.

5. The radiation-emitting component according to claim 1 , wherein the ceramic material is free of fluoride impurities.

6. The radiation-emitting component according to claim 1 , wherein the maximum of the primary radiation is between 420 to 470 nm, and wherein the maximum of the secondary 5 radiation is between 500 to 580 nm.

7. A converter chip consisting of a ceramic material for converting at least partially a primary radiation of a first wavelength in a secondary radiation of a second wavelength that is longer than the first wavelength, the ceramic material comprising a garnet having the structure A 3-x B 5 O 12 :D x and a barium-containing oxide of the formula Ba z Al 2y O z+3y ,
wherein in the garnet A 3-x B 5 O 12 :D x :
A is selected from the group consisting of lutetium, yttrium, gadolinium, terbium, scandium, another rare earth metal, and mixtures thereof,
B is selected from the group consisting of aluminum, scandium, gallium, indium, boron, and mixtures thereof,
D is at least one dopant selected from chromium, manganese and rare earth metals, and 0≤x≤2,
wherein in the barium aluminum oxide Ba z Al 2y O z+3y , z and y are integers >0,
wherein in the ceramic material, the amount of barium is 0.01 to 2.5 wt % and the garnet material shows a porosity of 0.001 to 2 vol % of the entire volume of the material, and
wherein the barium aluminium oxide is present as separate phases different from the phase of the A3-xB5O12:Dx, at least 99 wt % of the total amount of barium is present in the separate phases, over 95% of the barium containing phases have a diameter smaller than 5 μm and the grain size of the garnet is 10 to 20 μm, the ceramic material is transparent, and the total forward transmittance at a wavelength of 2000 nm is at least 66%.

8. The converter chip according to claim 7 , wherein the converter chip consists of the ceramic material.

9. The converter chip according to claim 7 , wherein the converter chip has an approximate size of 1 mm*1 mm.

10. The converter chip according to claim 7 , wherein the converter chip has a thickness of about 90 μm to 130 μm.

11. The radiation-emitting component according to claim 1 , wherein the rare earth metals are cerium, praseodymium, and gadolinium.

12. The converter chip according to claim 7 , wherein the rare earth metals are cerium, praseodymium and gadolinium.

Assignees

• Osram Opto Semiconductors Gmbh

Inventors

• Raukas Madis
• Bergenek Krister
• Wei George C
• Zink Nathan M
• Lange Stefan

Classifications

• H10W90/756

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title

• C04B2235/764

  Garnet structure A3B2(CO4)3 · CPC title

• C04B2235/6582

  Hydrogen containing atmosphere · CPC title

• C04B2235/3215

  Barium oxides or oxide-forming salts thereof · CPC title

• C09K11/7774 Primary

  Aluminates · CPC title