Thermal insulation layer and pressure transfer medium for high-pressure high-temperature cell

US10239273B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10239273-B2
Application numberUS-201815899735-A
CountryUS
Kind codeB2
Filing dateFeb 20, 2018
Priority dateApr 9, 2012
Publication dateMar 26, 2019
Grant dateMar 26, 2019

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

HPHT press system includes a thermal insulation layer. The thermal insulation layer includes CsCl, CsBr, CsI, or a combination thereof, and the thermal insulation layer is electrically insulating. The thermal insulation layer may include a thermal insulation sleeve and/or a thermal insulation button for an HPHT cell.

First claim

Opening claim text (preview).

What is claimed is: 1. A high-pressure high-temperature press system, the high-pressure high-temperature press system comprising: at least one anvil; a heating element; a current path for electrically connecting the at least one anvil and the heating element; and an insulation layer at least partly surrounding the heating element, the insulation layer being thermally insulating and electrically insulating, and the insulation layer comprising a material selected from the group consisting of cesium chloride (CsCl), cesium bromide (CsBr), cesium iodide (CsI) and combinations thereof. 2. The high-pressure high-temperature press system of claim 1 , wherein the insulation layer is separated from the anvil by a material that is different from the material of the insulation layer. 3. The high-pressure high-temperature press system of claim 1 , wherein the insulation layer is separate from the current path. 4. The high-pressure high-temperature press system of claim 1 , wherein the insulation layer has an electrical resistivity of greater than about 0.1 ohm·cm. 5. The high-pressure high-temperature press system of claim 1 , wherein the insulation layer further comprises an additive comprising electrically conductive or semiconductive particles, wherein the insulation layer is an electrically insulating layer having an electrical resistivity of greater than 0.1 ohm·cm. 6. The high-pressure high-temperature press system of claim 5 , wherein the additive comprises a material selected from the group consisting of chromites, ferrites, metals, semiconductors, superconductive oxides and combinations thereof. 7. The high-pressure high-temperature press system of claim 6 , wherein the additive comprises chromite according to the formulas LCrO 3 or M I Cr 2 O 4 , wherein L is yttrium or a rare earth element, and M I is a transition metal, Mg or Li. 8. The high-pressure high-temperature press system of claim 6 , wherein chromite is selected from the group consisting of LaCrO 3 , FeCr 2 O 4 , CoCr 2 O 4 , MgCr 2 O 4 and combinations thereof. 9. The high-pressure high-temperature press system of claim 8 , wherein the chromite is doped with Mg, Ca, Sr, or a combination thereof. 10. The insulation layer of claim 6 , wherein the additive comprises ferrite according to the formula M II Fe 2 O 4 or M III Fe 12 O 19 , wherein M II is a transition metal, Mg, or Li, and M III is Ba, Sr, or a combination thereof. 11. The insulation layer of claim 6 , wherein ferrite is selected from the group consisting of Fe 3 O 4 , CoFe 2 O 4 , ZnFe 2 O 4 , BaFe 12 O 19 , SrFe 12 O 19 , Mn a Zn (1-a) Fe 2 O 4 , Ni a Zn (1a) Fe 2 O 4 , and combinations thereof, wherein a is in a range of 0.01 to 0.99. 12. The insulation layer of claim 6 , wherein the metal is a refractory metal selected from the group consisting of Ti, V, Cr, Zr, Nb, Mo, Ru, Rh, Hf, Ta, W, Re, Os, Ir, Pt, and combinations thereof. 13. The insulation layer of claim 6 , wherein the metal is selected from the group consisting of Al, Fe, Mn, Ni, Co, Cu, B, Si, Be, Mg, Ca, Sr, Ba, Ga, In, Sn, Pb, Bi and combinations thereof. 14. The high-pressure high-temperature press system of claim 5 , wherein the additive is present in the insulation layer in an amount in a range of about 0.1 to about 50 volume percent based on the total volume of the insulation layer. 15. The high-pressure high-temperature press system of claim 5 , wherein the additive is present in the insulation layer in an amount of less than 5 volume percent based on the total volume of the insulation layer. 16. The high-pressure high-temperature press system of claim 5 , wherein the insulation layer forms a sleeve surrounding the heating element. 17. The high-pressure high-temperature press system of claim 5 , wherein the insulation layer comprises a thermal insulation button. 18. The high-pressure high-temperature press system of claim 5 , wherein the insulation layer at least partially surrounds a working volume of a high-pressure high-temperature press cell. 19. The high-pressure high-temperature press system of claim 1 , wherein the insulation layer forms a sleeve surrounding the heating element.

Assignees

Inventors

Classifications

  • Presses using a plurality of pressing members working in different directions · CPC title

  • B30B11/004Primary

    involving the use of very high pressures, (for the formation of artificial diamonds or boronitrides B01J3/065) · CPC title

  • Presses for the formation of diamonds or boronitrides · CPC title

  • Details of, or accessories for, presses; Auxiliary measures in connection with pressing (safety devices F16P) · CPC title

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What does patent US10239273B2 cover?
HPHT press system includes a thermal insulation layer. The thermal insulation layer includes CsCl, CsBr, CsI, or a combination thereof, and the thermal insulation layer is electrically insulating. The thermal insulation layer may include a thermal insulation sleeve and/or a thermal insulation button for an HPHT cell.
Who is the assignee on this patent?
Smith International
What technology area does this patent fall under?
Primary CPC classification B30B11/004. Mapped technology areas include Operations & Transport.
When was this patent published?
Publication date Tue Mar 26 2019 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).