Power storage device and method for manufacturing the same

Patent metadata

Field	Value
Publication number	US-10236502-B2
Application number	US-201715625476-A
Country	US
Kind code	B2
Filing date	Jun 16, 2017
Priority date	Apr 28, 2010
Publication date	Mar 19, 2019
Grant date	Mar 19, 2019

Abstract

Provided is a method for manufacturing a power storage device in which a crystalline silicon layer including a whisker-like crystalline silicon region is formed as an active material layer over a current collector by a low-pressure CVD method in which heating is performed using a deposition gas containing silicon. The power storage device includes the current collector, a mixed layer formed over the current collector, and the crystalline silicon layer functioning as the active material layer formed over the mixed layer. The crystalline silicon layer includes a crystalline silicon region and a whisker-like crystalline silicon region including a plurality of protrusions which project over the crystalline silicon region. With the protrusions, the surface area of the crystalline silicon layer functioning as the active material layer can be increased.

First claim

What is claimed is:

1. An electrode comprising:
a current collector comprising a metal element which forms silicide by reacting with silicon;
a mixed layer over the current collector, the mixed layer comprising silicon and the metal element;
a continuous silicon region over the mixed layer;
a first protrusion with a columnar shape over the continuous silicon region; and
a second protrusion with a needle shape over the continuous silicon region,
wherein a width of the first protrusion is greater than or equal to 500 nm and less than or equal to 3 μm.

2. The electrode according to claim 1 , wherein the metal element is one selected from zirconium, titanium, hafnium, vanadium, niobium, tantalum, chromium, molybdenum, tungsten, cobalt and nickel.

3. The electrode according to claim 1 , wherein the current collector comprises the metal element on a surface region of the current collector.

4. The electrode according to claim 1 , further comprising a metal oxide layer between the mixed layer and the continuous silicon region,
wherein the metal oxide layer consists essentially of the metal element and oxygen.

5. The electrode according to claim 1 , wherein the second protrusion has a narrower width toward the top.

6. The electrode according to claim 1 , wherein the mixed layer comprises silicide.

7. The electrode according to claim 1 , wherein each of the first protrusion and the second protrusion comprises crystalline silicon.

8. A power storage device comprising the electrode according to claim 1 .

9. An electronic device comprising the power storage device according to claim 8 ,
wherein the electronic device is any one of a digital camera or a video camera, a digital photo frame, a mobile phone, a portable game machine, a portable information terminal, an audio reproducing device and an electric propulsion vehicles.

10. An electrode comprising:
a current collector comprising a metal element which forms silicide by reacting with silicon;
a mixed layer over the current collector, the mixed layer comprising silicon and the metal element;
a continuous silicon region over the mixed layer;
a first protrusion with a columnar shape over the continuous silicon region; and
a second protrusion with a needle shape over the continuous silicon region,
wherein a width of the first protrusion is greater than or equal to 500 nm and less than or equal to 3 μm, and
wherein a long-side direction of the first protrusion is different from a long-side direction of the second protrusion.

11. The electrode according to claim 10 , wherein the metal element is one selected from zirconium, titanium, hafnium, vanadium, niobium, tantalum, chromium, molybdenum, tungsten, cobalt and nickel.

12. The electrode according to claim 10 , wherein the current collector comprises the metal element on a surface region of the current collector.

13. The electrode according to claim 10 , further comprising a metal oxide layer between the mixed layer and the continuous silicon region,
wherein the metal oxide layer consists essentially of the metal element and oxygen.

14. The electrode according to claim 10 , wherein the second protrusion has a narrower width toward the top.

15. The electrode according to claim 10 , wherein the mixed layer comprises silicide.

16. The electrode according to claim 10 , wherein each of the first protrusion and the second protrusion comprises crystalline silicon.

17. A power storage device comprising the electrode according to claim 10 .

18. An electronic device comprising the power storage device according to claim 17 ,
wherein the electronic device is any one of a digital camera or a video camera, a digital photo frame, a mobile phone, a portable game machine, a portable information terminal, an audio reproducing device and an electric propulsion vehicles.

19. The electrode according to claim 1 , wherein a material of the first protrusion, the second protrusion and the continuous silicon region are the same.

Assignees

• Semiconductor Energy Lab

Inventors

• Kuriki Kazutaka
• Yukawa Mikio
• Asano Yuji

Classifications

• H10P14/3451

  Structure · CPC title

• H10P14/3411

  Silicon, silicon germanium or germanium · CPC title

• H10P14/24

  using chemical vapour deposition [CVD] · CPC title

• H01G11/26

  characterised by their structure, e.g. multi-layered, porosity or surface features · CPC title

• H01G11/46

  Metal oxides · CPC title