Light-emitting device and manufacturing method thereof

Patent metadata

Field	Value
Publication number	US-10236413-B2
Application number	US-201715412759-A
Country	US
Kind code	B2
Filing date	Jan 23, 2017
Priority date	Apr 20, 2015
Publication date	Mar 19, 2019
Grant date	Mar 19, 2019

Abstract

A light-emitting device including a substrate having a top surface, a side surface and a roughed surface between the top surface and the side surface, wherein the top surface includes a first portion and a second portion; a first semiconductor stack including a first upper surface and a first side wall, wherein the first semiconductor stack is on the second portion and exposes the first portion; a second semiconductor stack including a second side wall, wherein the second semiconductor stack is on the first upper surface and exposes an exposing portion of the first upper surface; wherein the first side wall and the first portion of the top surface form an acute angle α between thereof, and the second side wall and the exposing portion of the first upper surface form an obtuse angle β between thereof; and wherein the roughed surface is connected to the top surface.

First claim

What is claimed is:

1. A light-emitting device, comprising:
a substrate having a top surface, a side surface and a roughed surface between the top surface and the side surface, wherein the top surface comprises a first portion and a second portion;
a first semiconductor stack comprising a first upper surface and a first side wall, wherein the first semiconductor stack is on the second portion and exposes the first portion;
a second semiconductor stack comprising a second side wall, wherein the second semiconductor stack is on the first upper surface and exposes an exposing portion of the first upper surface;
wherein the first side wall and the first portion of the top surface form an acute angle α between thereof, and the second side wall and the exposing portion of the first upper surface form an obtuse angle β between thereof, and
wherein the roughed surface is connected to the top surface.

2. The light-emitting device according to claim 1 , wherein 30°≤α≤80°.

3. The light-emitting device according to claim 1 , wherein 100°≤β≤170°.

4. The light-emitting device according to claim 1 , further comprising a buffer layer between the first semiconductor stack and the top surface, wherein the buffer layer comprises AN.

5. The light-emitting device according to claim 1 , wherein the first side wall is rougher than the second side wall.

6. The light-emitting device according to claim 1 , wherein the side surface comprises a damage region, wherein a roughness of the damage region is larger than roughness of the other portion of the side surface.

7. The light-emitting device according to claim 1 , wherein the first side wall comprises an upper side wall connecting the first upper surface and a lower side wall connecting the upper side wall and the top surface, wherein the upper side wall is approximately parallel to the side surface of the substrate.

8. The light-emitting device according to claim 1 , wherein an angle between the roughed surface and the side surface is larger than 90 degrees.

9. The light-emitting device according to claim 1 , wherein the substrate further comprises a border between the roughed surface and the side surface, and the narrowest distance between the border and the top surface is between 0.5 μm and 25 μm.

10. The light-emitting device according to claim 1 , wherein the top surface comprises a plurality of concavo-convex structures.

11. The light-emitting device according to claim 10 , wherein the first portion of the top surface comprises a plurality of first concavo-convex structures and the second portion of the top surface comprises a plurality of second concavo-convex structures; and
wherein the sizes of the plurality of first concavo-convex structures are smaller than the sizes of the plurality of second concavo-convex structures.

12. The light-emitting device according to claim 1 , wherein the top surface further comprises an edge, wherein the first portion surrounds the second portion and is between the edge and the second portion, and wherein a narrowest distance between the second portion and the edge is between 1 μm and 25 μm.

13. The light-emitting device according to claim 1 , wherein a roughness of the roughed surface is larger than that of the side surface.

14. The light-emitting device according to claim 13 , wherein a roughness is a root-mean-square roughness which is between 0.1 μm and 1 μm.

15. The light-emitting device according to claim 1 , wherein the second semiconductor stack comprises a first semiconductor layer, an active layer on the first semiconductor layer and a second semiconductor layer on the active layer, and the first semiconductor stack and the first semiconductor layer have the same conductive type.

16. The light-emitting device according to claim 4 , wherein a thickness of the buffer layer is between 5 nm and 50 nm.

17. The light-emitting device according to claim 1 , further comprising voids between the top surface and the first semiconductor stack.

18. The light-emitting device according to claim 1 , wherein the first side wall comprises multiple pillars formed thereon.

Assignees

• Epistar Corp

Inventors

• Chao Yen-Tai
• Hsu Sen-Jung
• Chang Tao-Chi
• Wen Wei-Chih
• Chen Ou
• Tu Chun-Hsiang

Classifications

• H01L33/22 Primary

  Electricity · mapped topic

• H01L2933/0091

  Electricity · mapped topic

• H01L33/005

  Electricity · mapped topic

• H01L33/10

  Electricity · mapped topic

• H01L33/12

  Electricity · mapped topic