Solid-state imaging element and electronic device to improve quality of an image

Patent metadata

Field	Value
Publication number	US-10236311-B2
Application number	US-201515518483-A
Country	US
Kind code	B2
Filing date	Oct 7, 2015
Priority date	Oct 20, 2014
Publication date	Mar 19, 2019
Grant date	Mar 19, 2019

Abstract

The present technology relates to a solid-state imaging element and an electronic device capable of improving image quality of the solid-state imaging element. The solid-state imaging element includes a photoelectric conversion unit adapted to photoelectrically convert incident light incident from a predetermined incident surface. Also, the solid-state imaging element includes a wire arranged on a bottom surface side that is an opposite surface of the incident surface of the photoelectric conversion unit, and formed with a protruding pattern on a surface facing the photoelectric conversion unit. The present technology can be applied to, for example, a solid-state imaging element such as a CMOS image sensor, and an electronic device including the solid-state imaging element.

First claim

The invention claimed is:

1. A solid-state imaging element, comprising:
a wiring layer, and
a photoelectric conversion unit configured to photoelectrically convert incident light incident from incident surface of the photoelectric conversion unit, wherein the photoelectric conversion unit includes a plurality of patterns, wherein positions of the plurality of patterns with respect to the wiring layer are misaligned from each other along a straight line in an extending direction of the wiring layer,
wherein the wiring layer is on a bottom surface side of the photoelectric conversion unit, wherein the bottom surface side is opposite to the incident surface, and wherein the wiring layer includes a protruding pattern on a surface that faces the photoelectric conversion unit.

2. The solid-state imaging element according to claim 1 , wherein the plurality of patterns are at different intervals in the extending direction of the wiring layer.

3. The solid-state imaging element according to claim 1 , wherein a pixel in a proximity to an outer periphery of the solid-state imaging element has a lower density of patterns in a direction vertical to a side of the outer periphery.

4. The solid-state imaging element according to claim 1 , wherein each of the positions of the plurality of patterns is different than a position of a first wire of the wiring layer, wherein the position of the first wire is closer to the photoelectric conversion unit than a position of a second wire, and wherein the second wire includes a set of patterns of the plurality of patterns.

5. The solid-state imaging element according to claim 1 , wherein a width of each of the plurality of patterns is based on a width of the wiring layer.

6. The solid-state imaging element according to claim 1 , wherein a pixel in proximity to a side of an outer periphery of the solid-state imaging element includes a set of patterns of the plurality of patterns, and wherein a length corresponding to the set of patterns in the extending direction of the wiring layer is greater than a threshold length.

7. The solid-state imaging element according to claim 1 ,
wherein the wiring layer comprises a plurality of wires,
wherein the plurality of patterns are not formed in a specific wire of the plurality of wires of the wiring layer, and
wherein the specific wire is closest to a bottom surface of the photoelectric conversion unit among the plurality of wires.

8. The solid-state imaging element according to claim 1 , wherein the plurality of patterns are in the photoelectric conversion unit of a pixel that receives light of a specific wavelength or more.

9. The solid-state imaging element according to claim 1 , wherein an arrangement of the plurality of patterns is based on at least one of a connection of wires of adjacent wiring layers or a connection of a wire of the wiring layer to a semiconductor substrate of the photoelectric conversion unit.

10. An electronic device, comprising:
a solid-state imaging element that comprises:
a wiring layer; and
a photoelectric conversion unit configured to photoelectrically convert incident light incident from incident surface of the photoelectric conversion unit, wherein the photoelectric conversion unit includes a plurality of patterns, and wherein positions of the plurality of patterns with respect to the wiring layer are misaligned from each other along a straight line in an extending direction of the wiring layer,
wherein the wiring layer is on a bottom surface side of the photoelectric conversion unit, wherein the bottom surface side is opposite to the incident surface, and wherein the wiring layer includes a protruding pattern on a surface that faces the photoelectric conversion unit.

Assignees

• Sony Semiconductor Solutions Corp

Inventors

• Suzuki Ryoji
• Moriya Hitoshi
• Ando Atsuhiro
• Masagaki Atsushi

Classifications

• H04N23/672

  based on the phase difference signals · CPC title

• H04N25/704

  Pixels specially adapted for focusing, e.g. phase difference pixel sets · CPC title

• H04N25/76

  Addressed sensors, e.g. MOS or CMOS sensors · CPC title

• H01L27/146

  Electricity · mapped topic

• H01L31/022441

  Electricity · mapped topic