Polymer, making method, resist composition, and patterning process

Patent metadata

Field	Value
Publication number	US-10234757-B2
Application number	US-201313768545-A
Country	US
Kind code	B2
Filing date	Feb 15, 2013
Priority date	Feb 27, 2012
Publication date	Mar 19, 2019
Grant date	Mar 19, 2019

Abstract

A sulfonic acid anion-containing polymer having an alkylsulfonium cation not in covalent bond thereto can be readily prepared by reacting a sulfonic acid anion-containing polymer having an ammonium or metal cation with an alkylsulfonium salt under mild conditions. A resist composition comprising the inventive polymer is effective for suppressing acid diffusion since the sulfonium salt is bound to the polymer backbone. When processed by the ArF lithography, the polymer exhibits a lower absorption at the exposure wavelength than the triarylsulfonium salt form PAGs, resulting in improved resolution, mask fidelity, and LWR.

First claim

The invention claimed is:

1. A sulfonic acid anion-containing polymer comprising a recurring unit which is one selected from the group consisting of the following formulae:

2. The polymer of claim 1 , comprising recurring units having the general formula (2):

wherein R 1′ is hydrogen, fluorine, methyl or trifluoromethyl, Z is a single bond, phenylene, naphthylene or (backbone)-C(═O)—O—Z′—, Z′ is a straight, branched or cyclic C 1 -C 10 alkylene group which may contain a hydroxyl radical, ether bond, ester bond, or lactone ring, or a phenylene or naphthylene group, and XA is an acid labile group.

3. The polymer of claim 1 , comprising recurring units having the general formula (3):

wherein R 1″ is hydrogen, fluorine, methyl or trifluoromethyl, and YL is a polar group having one or more structures selected from the group consisting of hydroxyl, cyano, carbonyl, ether bond, ester bond, sulfonic acid ester bond, carbonate, lactone ring, sultone ring, and carboxylic anhydride.

4. A resist composition comprising the polymer of claim 1 .

5. The resist composition of claim 4 , further comprising a photoacid generator.

6. The resist composition of claim 4 , further comprising a quencher.

7. The resist composition of claim 4 , further comprising a solvent.

8. The resist composition of claim 4 , further comprising a surfactant.

9. A pattern forming process comprising the steps of coating the resist composition of claim 4 onto a substrate, baking to form a resist film, exposing the resist film to high-energy radiation, and developing it in a developer.

10. The pattern forming process of claim 9 wherein the high-energy radiation has a wavelength in the range of 180 to 250 nm.

11. The pattern forming process of claim 9 wherein the step of exposing to high-energy radiation includes immersion lithography of exposing the resist film to radiation via a liquid.

12. The pattern forming process of claim 11 , further comprising the step of forming a protective film on the resist film, so that the protective film intervenes between the resist film and the liquid during the immersion lithography.

13. The pattern forming process of claim 9 wherein the high-energy radiation is EUV or EB.

Assignees

• Shinetsu Chemical Co

Inventors

• Ohashi Masaki
• Kobayashi Tomohiro

Classifications

• C08F220/283

  and containing one or more carboxylic moiety in the chain, e.g. acetoacetoxyethyl(meth)acrylate · CPC title

• C08L81/08

  Polysulfonates · CPC title

• C08G75/24

  Polysulfonates · CPC title

• C08F220/24

  containing perhaloalkyl radicals · CPC title

• G03F7/0046

  with perfluoro compounds, e.g. for dry lithography (G03F7/0048 takes precedence) · CPC title