Solar cell and method for manufacturing the same

Patent metadata

Field	Value
Publication number	US-10230009-B2
Application number	US-201815995701-A
Country	US
Kind code	B2
Filing date	Jun 1, 2018
Priority date	Nov 28, 2014
Publication date	Mar 12, 2019
Grant date	Mar 12, 2019

Abstract

A solar cell can include a silicon semiconductor substrate having a first conductive type; a oxide layer on a first surface of the silicon semiconductor substrate; a polysilicon layer on the oxide layer and having the first conductive type; an emitter region at a second surface of the silicon semiconductor substrate opposite to the first surface and having a second conductive type opposite to the first conductive type; a first passivation film on the polysilicon layer; a first electrode connected to the polysilicon layer through an opening formed in the first passivation film; a second passivation film on the emitter region; and a second electrode connected to the emitter region through an opening formed in the second passivation film.

First claim

What is claimed is:

1. A solar cell, comprising:
a silicon semiconductor substrate having a first conductive type;
an oxide layer on a first surface of the silicon semiconductor substrate;
a polysilicon layer on the oxide layer and having the first conductive type;
an emitter region at a second surface of the silicon semiconductor substrate opposite to the first surface and having a second conductive type opposite to the first conductive type;
a first passivation film on the polysilicon layer;
a first electrode connected to the polysilicon layer through an opening formed in the first passivation film;
a second passivation film on the emitter region;
a second electrode connected to the emitter region through an opening formed in the second passivation film; and
an isolation portion for preventing a contact between the polysilicon layer and the emitter region,
wherein the isolation portion excludes the oxide layer and the polysilicon layer, and is in an edge portion of the first surface of the silicon semiconductor substrate, and
the first passivation film covers the first surface of the silicon semiconductor substrate and the isolation portion together.

2. The solar cell of claim 1 , wherein the first electrode comprises a plurality of first finger electrodes spaced apart from each other and extended in parallel in a first direction, and
the second electrode comprises a plurality of second finger electrodes spaced apart from each other and extended in parallel in the first direction.

3. The solar cell of claim 2 , wherein the first electrode further comprises a first bus bar connected to the plurality of first finger electrodes, and
the second electrode further comprises a second bus bar connected to the plurality of second finger electrodes.

4. The solar cell of claim 1 , wherein the silicon semiconductor substrate is single-crystal silicon semiconductor substrate.

5. The solar cell of claim 1 , wherein the emitter region is formed by diffusing the impurities of the second conductive type into the second surface of the semiconductor substrate.

6. The solar cell of claim 1 ,
wherein the isolation portion is formed on at least one of the first surface, a side surface, or the second surface of the silicon semiconductor substrate.

7. The solar cell of claim 6 , wherein a width of the isolation portion is 1 nm to 1 mm.

8. The solar cell of claim 1 , wherein a thickness of the edge portion in the polysilicon layer progressively decreases toward the isolation portion.

9. The solar cell of claim 1 , wherein the first passivation film comprises a side portion extending up a side surface of the silicon semiconductor substrate.

10. The solar cell of claim 9 , wherein the second passivation film comprises a side portion formed on the side surface of the silicon semiconductor substrate, and
the side portion of the first passivation film on the side surface of the silicon semiconductor substrate is on the side portion of the second passivation film.

11. The solar cell of claim 1 , wherein the second surface of the silicon semiconductor substrate is a light incident surface, the first surface of the silicon semiconductor substrate is a back surface of the silicon semiconductor substrate, and the polysilicon layer forms a back surface field region.

12. The solar cell of claim 3 , wherein all of the plurality of first finger electrodes and the first bus bar are connected to the polysilicon layer through the first passivation film.

13. The solar cell of claim 12 , wherein all of the plurality of first finger electrodes and the first bus bar have a single layer or double layer structure.

14. The solar cell of claim 12 , wherein:
the plurality of first finger electrodes have a single layer structure, and
the first bus bar has a double layer structure.

15. The solar cell of claim 1 , wherein the first and second passivation film are formed of a plurality of layers.

16. The solar cell of claim 1 , wherein a thickness of the polysilicon layer is more than a thickness of the first passivation film.

17. The solar cell of claim 1 , wherein a contact area in which the first electrode is connected to the polysilicon layer includes a plurality of metal crystals.

Assignees

• Lg Electronics Inc

Inventors

• Ha Jungmin
• Kim Sungjin
• Cheong Juhwa
• Ahn Junyong
• Choi Hyungwook
• Chang Wonjae
• Kim Jaesung

Classifications

• Y02E10/50

  Photovoltaic [PV] energy · CPC title

• H01L31/1864

  Electricity · mapped topic

• H01L31/03685

  Electricity · mapped topic

• H01L31/022425

  Electricity · mapped topic

• H01L31/077

  Electricity · mapped topic