Flexible display including metal layer formed in opening of insulating layer

Patent metadata

Field	Value
Publication number	US-10229933-B2
Application number	US-201615178429-A
Country	US
Kind code	B2
Filing date	Jun 9, 2016
Priority date	Aug 4, 2015
Publication date	Mar 12, 2019
Grant date	Mar 12, 2019

Abstract

A flexible display and a method of manufacturing the same are disclosed. In one aspect, the display includes a flexible substrate including a display area and a peripheral area that surrounds the display area, and a thin-film transistor (TFT) layer formed on the flexible substrate and comprising an insulating layer and a TFT. The insulating layer is formed of an organic material and has an opening that surrounds the display area in the peripheral area; a pixel electrode electrically connected to the TFT. The display also includes a first metal layer formed in the opening and covering inner sides of the opening.

First claim

What is claimed is:

1. A flexible display comprising:
a flexible substrate including a display area and a peripheral area that surrounds the display area;
a thin-film transistor (TFT) layer disposed on the flexible substrate and comprising an insulating layer and a TFT, wherein the insulating layer comprises a first insulating layer and a second insulating layer on the first insulating layer and has an opening that surrounds the display area in the peripheral area;
a pixel electrode electrically connected to the TFT; and
a first metal layer formed in the opening and covering inner sides of the opening,
wherein the TFT comprises a semiconductor layer, a gate electrode having a portion overlapping the semiconductor layer, and source and drain electrodes electrically connected to the semiconductor layer via a plurality of contact holes,
wherein the first insulating layer is interposed between the semiconductor layer and the gate electrode, and the second insulating layer is interposed between the gate electrode and source and drain electrodes,
wherein the second insulating layer is formed of an organic material.

2. The flexible display of claim 1 , wherein the first metal layer has a closed polygonal form or a closed curve form and penetrates through the insulating layer.

3. The flexible display of claim 1 , wherein the first metal layer completely fills in the opening.

4. The flexible display of claim 1 , further comprising a buffer layer formed of an organic material or an inorganic material, wherein the buffer layer is interposed between the flexible substrate and the TFT layer, and wherein the buffer layer contacts the first metal layer through the opening.

5. The flexible display of claim 1 , further comprising a second metal layer disposed over the first metal layer.

6. The flexible display of claim 5 , wherein the second metal layer is formed of the same material as the pixel electrode.

7. The flexible display of claim 5 , wherein the flexible display further comprises a first material layer formed of the same material as the semiconductor layer, and wherein the first material layer is interposed between the flexible substrate and the first metal layer.

8. The flexible display of claim 7 , wherein a portion of a top surface of the first material layer contacts the first metal layer through the opening.

9. The flexible display of claim 7 , wherein the first metal layer is formed of the same material as the source and drain electrodes.

10. The flexible display of claim 7 , wherein the insulating layer is interposed between the semiconductor layer and the source and drain electrodes.

11. The flexible display of claim 5 , further comprising a first material layer and a second material layer, wherein the first material layer is interposed between the flexible substrate and the first metal layer, wherein the second material layer is interposed between the first and second metal layers.

12. The flexible display of claim 11 , further comprising a via layer interposed between the TFT and the pixel electrode, and wherein the first material layer is formed of the same material as the via layer.

13. The flexible display of claim 1 , further comprising a thin-film encapsulation layer formed over the pixel electrode, wherein the thin-film encapsulation layer is formed over the entire surface of the flexible substrate and extends over a top surface of the first metal layer so as to cover the first metal layer.

14. The flexible display of claim 1 , further comprising a first material layer interposed between the flexible substrate and the first metal layer.

15. A flexible display comprising:
a flexible substrate including a display area and a peripheral area that surrounds the display area;
a thin-film transistor (TFT) layer disposed on the flexible substrate and comprising an insulating layer and a TFT, wherein the insulating layer is formed of an organic material and has an opening that surrounds the display area in the peripheral area;
a pixel electrode electrically connected to the TFT;
a first metal layer formed in the opening and covering inner sides of the opening,
wherein the TFT comprises a semiconductor layer, a gate electrode having a portion overlapping the semiconductor layer, and source and drain electrodes electrically connected to the semiconductor layer via a plurality of contact holes,
wherein the insulating layer is interposed between the semiconductor layer and the source and drain electrodes;
a second metal layer disposed over the first metal layer; and
a first material layer formed of the same material as the semiconductor layer,
wherein the first material layer is interposed between the flexible substrate and the first metal layer.

16. A flexible display comprising:
a flexible substrate including a display area and a peripheral area that surrounds
the display area;
a thin-film transistor (TFT) layer disposed on the flexible substrate and comprising an insulating layer and a TFT, wherein the insulating layer is formed of an organic material and has an opening that surrounds the display area in the peripheral area;
a pixel electrode electrically connected to the TFT;
a first metal layer formed in the opening and covering inner sides of the opening,
wherein the TFT comprises a semiconductor layer, a gate electrode having a portion overlapping the semiconductor layer, and source and drain electrodes electrically connected to the semiconductor layer via a plurality of contact holes,
wherein the insulating layer is interposed between the semiconductor layer and the source and drain electrodes;
a second metal layer disposed over the first metal layer; and
a first material layer and a second material layer, wherein the first material layer is interposed between the flexible substrate and the first metal layer, and wherein the second material layer is interposed between the first and second metal layers.

17. The flexible display of claim 16 , further comprising a via layer interposed between the TFT and the pixel electrode, and wherein the first material layer is formed of the same material as the via layer.

18. A flexible display comprising:
a flexible substrate including a display area and a peripheral area adjacent to the
display area;
thin-film transistor (ITT) layer disposed on the flexible substrate and comprising an insulating layer and a TFT, wherein the insulating layer is formed of an organic material and has an opening adjacent to the display area in the peripheral area;
a pixel electrode electrically connected to the TFT; and
a first metal layer formed in the opening,
wherein the TFT comprises a semiconductor layer, a gate electrode having a portion overlapping the semiconductor layer, and source and drain electrodes electrically connected to the semiconductor layer,
wherein the insulating layer is disposed between the semiconductor layer and the source and drain electrodes, and
wherein the insulating layer is disposed between the semiconductor layer and the gate electrode.

19. The flexible display of claim 18 , wherein the first metal layer has a closed polygonal form or a closed curve form and penetrates through the insulating layer.

20. The flexible display of claim 18 , wherein the first metal layer completely fills in the opening.

Assignees

• Samsung Display Co Ltd

Inventors

• Seo Taean
• Kim Taewoong
• Seol Younggug
• Choi Jinhwan

Classifications

• H01L27/1259

  Electricity · mapped topic

• H01L27/1248

  Electricity · mapped topic

• H01L27/1218 Primary

  Electricity · mapped topic

• H01L2227/323

  Electricity · mapped topic

• H01L27/1262

  Electricity · mapped topic