Inert anode electroplating processor and replenisher

Patent metadata

Field	Value
Publication number	US-10227707-B2
Application number	US-201514802859-A
Country	US
Kind code	B2
Filing date	Jul 17, 2015
Priority date	Jul 17, 2015
Publication date	Mar 12, 2019
Grant date	Mar 12, 2019

Abstract

An electroplating processor has a vessel holding an electrolyte. An inert anode in the vessel has an anode wire within an anode membrane tube. A head for holds a wafer in contact with the electrolyte in the vessel. The wafer is connected to a cathode. A catholyte replenisher is connected to the vessel. The catholyte replenisher adds metal ions into the catholyte by moving ions of a bulk metal through a catholyte membrane in the catholyte replenisher.

First claim

The invention claimed is:

1. A copper electroplating system comprising:
at least one electroplating vessel with at least one inert anode in contact with a process anolyte in a process anolyte compartment of the vessel, the at least one inert anode including process anolyte within at least one anode membrane tube;
a head for holding a wafer with a conductive seed layer in contact with a vessel-catholyte containing copper ions in a vessel-catholyte compartment of the vessel, with the wafer in a non-vertical orientation;
a current thief membrane tube in the process anolyte in the vessel and positioned to flow thief current around the wafer, the current thief membrane tube containing thiefolyte;
a contact ring having electrical contacts for making electrical contact to the conductive seed layer and for sealing to the wafer;
a first voltage source connecting the at least one inert anode to the conductive seed layer, with the first voltage source causing electrical current to flow between the anode and the conductive seed layer, which causes a conversion of water at the inert anode into oxygen gas and hydrogen ions and the deposit of copper ions from the vessel-catholyte onto the wafer;
a second voltage source connecting to the thiefolyte in the current thief membrane tube, the second negative voltage source controllable independently of the first positive voltage source, the second negative voltage source reducing current density at the edge of the wafer;
an external three-compartment processor for replenishing the vessel-catholyte, including:
a first replenisher compartment having supply and return lines to the vessel-catholyte compartment in the vessel, the first replenisher compartment containing bulk copper material and vessel catholyte;
a second replenisher compartment having supply and return lines to the process anolyte compartment in the vessel, the second replenisher compartment containing process anolyte and separated from the first replenisher compartment by a first membrane;
a third replenisher compartment having supply and return lines to the current thief membrane tube, the third replenisher compartment containing an inert cathode and thiefolyte, the third replenisher compartment separated from the second replenisher compartment by a second membrane; and
a third voltage source connecting the bulk copper material to the inert cathode, with the third voltage source controllable independently of the first voltage source and the second voltage source, the third voltage source causing electrical current to flow between the inert cathode and the conductive seed layer, which causes erosion of bulk copper material into copper ions that replenish the vessel-catholyte.

2. The system of claim 1 with the contact ring moveable vertically to engage contact fingers on the contact ring onto a down facing surface of a wafer.

3. The system of claim 1 further wherein the inert anode comprises an inert wire inside an anode membrane tube containing the process anolyte.

4. The system of claim 1 further including a current thief wire inside of the current thief membrane tube.

5. The system of claim 1 with the inert cathode material comprising a platinum clad wire mesh or plate.

6. The system of claim 1 further including a nitrogen sparging outlet in the third compartment for agitation and dilution of hydrogen gas.

7. The system of claim 1 further including a nitrogen sparging outlet in the first compartment for agitation and reduced oxidation of bulk copper material.

8. The system of claim 1 further including a nitrogen sparging outlet in the second compartment for agitation.

9. The system of claim 1 further including a deionized water source connected to the second compartment.

Assignees

• Applied Materials Inc

Inventors

• Wilson Gregory J
• Mchugh Paul R
• Klocke John L

Classifications

• C25D21/14

  Controlled addition of electrolyte components · CPC title

• C25D21/10

  Agitating of electrolytes; Moving of racks · CPC title

• C25D17/10

  Electrodes {, e.g. composition, counter electrode} · CPC title

• C25D17/001 Primary

  Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells · CPC title

• C25D7/123

  Semiconductors first coated with a seed layer or a conductive layer · CPC title