Fluorine-containing polymerized HMDSO applications for OLED thin film encapsulation

Patent metadata

Field	Value
Publication number	US-10224507-B2
Application number	US-201615277353-A
Country	US
Kind code	B2
Filing date	Sep 27, 2016
Priority date	Jul 3, 2014
Publication date	Mar 5, 2019
Grant date	Mar 5, 2019

Abstract

Methods for forming an OLED device are described. An encapsulation structure having organic buffer layer and an interface layer disposed on the organic buffer layer sandwiched between barrier layers is deposited over an OLED structure. In one example, an OLED device includes a first barrier layer disposed on a region of a substrate having an OLED structure disposed thereon, a fluorinated buffer layer including a polymer material containing fluorine disposed on the first barrier layer, an interface layer including the polymer material on the fluorinated buffer layer, and a second barrier layer disposed on the interface layer.

First claim

The invention claimed is:

1. An OLED device, comprising:
a first barrier layer disposed on a region of a substrate having an OLED structure disposed thereon;
a fluorinated buffer layer including a polymer material containing fluorine disposed on the first barrier layer;
an interface layer including the polymer material on the fluorinated buffer layer, wherein the interface layer has a gradually fade-out fluorine concentration; and
a second barrier layer disposed on the interface layer.

2. The device of claim 1 , wherein the interface layer is a fluorine free hexamethyldisiloxane (pp-HMDSO) layer or a gradient hexamethyldisiloxane (pp-HMDSO) layer with varying fluorine concentration.

3. The device of claim 1 , wherein the fluorinated buffer layer comprises fluorinated plasma-polymerized hexamethyldisiloxane (pp-HMDSO:F).

4. The device of claim 1 , wherein the first barrier layer is a dielectric layer fabricated from silicon nitride (SiN), silicon oxynitride (SiON), silicon dioxide (SiO 2 ), aluminum oxide (Al 2 O 3 ), or aluminum nitride (AIN).

5. The device of claim 1 , wherein the second barrier layer is a dielectric layer fabricated from silicon nitride (SiN), silicon oxynitride (SiON), or silicon dioxide (SiO 2 ).

6. The device of claim 1 , wherein the fluorinated buffer layer has a fluorine content less than 10 atomic percent.

7. The device of claim 1 further comprising:
a buffer adhesion layer formed between the first barrier layer and the fluorinated buffer layer.

8. The device of claim 7 , wherein the buffer adhesion layer is a silicon oxynitride or a silicon nitride layer.

9. The device of claim 1 further comprising:
a stress reduction layer formed between the interface layer and the second barrier layer.

10. The device of claim 9 , wherein the stress reduce layer is a silicon oxynitride layer.

11. The device of claim 1 , wherein the interface layer has a thickness of about 10 percent of a thickness of the fluorinated buffer layer.

12. The device of claim 1 , wherein the polymer material comprises plasma-polymerized hexamethyldisiloxane (pp-HMDSO).

13. An OLED device, comprising:
a first barrier layer disposed on a region of a substrate having an OLED structure disposed thereon;
a fluorinated plasma-polymerized hexamethyldisiloxane (pp-HMDSO:F) material formed on the barrier layer; and
a plasma-polymerized hexamethyldisiloxane (pp-HMDSO) material formed on the fluorinated plasma-polymerized hexamethyldisiloxane (pp-HMDSO:F) material.

14. The device of claim 13 further comprising:
a second barrier layer formed on the plasma-polymerized hexamethyldisiloxane (pp-HMDSO) material.

15. The device of claim 13 , the plasma-polymerized hexamethyldisiloxane (pp-HMDSO) material is a fluorine free material.

16. The device of claim 13 , wherein the plasma-polymerized hexamethyldisiloxane (pp-HMDSO) material has a gradually fade-out fluorine concentration.

17. The device of claim 13 , wherein the fluorinated plasma-polymerized hexamethyldisiloxane (pp-HMDSO:F) material has a fluorine content less than 10 atomic percent.

18. The device of claim 13 , wherein the plasma-polymerized hexamethyldisiloxane (pp-HMDSO) material has a thickness of about 10 percent of a thickness of the fluorinated plasma-polymerized hexamethyldisiloxane (pp-HMDSO:F) material.

Assignees

• Applied Materials Inc

Inventors

• Chen Jrjyan Jerry
• Choi Soo Young

Classifications

• H01L51/5256 Primary

  Electricity · mapped topic

• H01L2251/558

  Electricity · mapped topic

• H01L2251/5346

  Electricity · mapped topic

• H01L51/56

  Electricity · mapped topic

• H10K2101/80

  Composition varying spatially, e.g. having a spatial gradient · CPC title