Light detection device

Patent metadata

Field	Value
Publication number	US-10224437-B2
Application number	US-201515551099-A
Country	US
Kind code	B2
Filing date	Dec 14, 2015
Priority date	Mar 18, 2015
Publication date	Mar 5, 2019
Grant date	Mar 5, 2019

Abstract

A semiconductor substrate includes a first region in which a plurality of pixels are disposed and a second region located inside the first region to be surrounded by the first region when viewed from a direction in which a principal surface and a principal surface oppose each other. A through-hole penetrating through the semiconductor substrate is formed in the second region of the semiconductor substrate. An electrode disposed on a side of the principal surface of the semiconductor substrate and electrically connected to the plurality of pixels and an electrode disposed on a side of a principal surface of a mount substrate are connected to each other via a bonding wire inserted through the through-hole.

First claim

The invention claimed is:

1. A photodetecting device comprising:
a semiconductor photodetecting element including a semiconductor substrate in which a photodiode array including a plurality of pixels is formed, the semiconductor substrate having a first principal surface and a second principal surface opposing each other; and
a mount substrate disposed to oppose the semiconductor photodetecting element, and having a third principal surface opposing the second principal surface of the semiconductor substrate and a fourth principal surface opposing the third principal surface,
wherein the semiconductor substrate includes a first region in which the plurality of pixels are disposed and a second region located inside the first region to be surrounded by the first region when viewed from a direction in which the first principal surface and the second principal surface oppose each other,
a through hole penetrating through the semiconductor substrate is formed in the second region of the semiconductor substrate,
a first electrode disposed on a side of the first principal surface of the semiconductor substrate and electrically connected to the plurality of pixels and a second electrode disposed on a side of the third principal surface of the mount substrate are connected to each other via a first wire inserted through the through-hole, and
an electrode disposed on a side of the second principal surface of the semiconductor substrate and electrically connected to the semiconductor substrate and an electrode disposed on the third principal surface of the mount substrate are in surface contact with a conductive material to thermally connect the second principal surface and the third principal surface.

2. The photodetecting device according to claim 1 , wherein
the semiconductor photodetecting element includes a plurality of semiconductor photodetecting elements,
each of the semiconductor photodetecting elements is disposed on the mount substrate in such a manner that the second principal surface and the third principal surface oppose each other, and
the first electrode and the second electrode are connected to each other via the first wire for each of the semiconductor photodetecting elements.

3. The photodetecting device according to claim 1 , wherein
the semiconductor photodetecting element includes a plurality of channels, the single channel being constituted by the single photodiode array, and
the first electrode and the second electrode are connected to each other via the first wire for each of the channels.

4. The photodetecting device according to claim 1 , wherein
a third electrode disposed on the side of first principal surface of the semiconductor substrate and electrically connected to the semiconductor substrate and a fourth electrode disposed on the side of third principal surface of the mount substrate are connected to each other via a second wire inserted through the through-hole.

5. The photodetecting device according to claim 1 , wherein
the second region is located substantially at a center of the first region when viewed from the direction in which, the first principal surface and the second principal surface oppose each other.

6. The photodetecting device according to claim 1 , wherein
an opening of the through-hole has a circular shape.

7. The photodetecting device according to claim 1 , wherein
an opening of the through-hole has a rectangular shape.

8. The photodetecting device according to claim 1 , wherein
the photodiode array includes:
a plurality of avalanche photodiodes operating in a Geiger mode and formed in the semiconductor substrate;
quenching resistors connected in series to the respective avalanche photodiodes and disposed on the side of first principal surface of the semiconductor substrate; and
a signal line to which the quenching resistors are connected in parallel, and that disposed on the side of first principal surface of the semiconductor substrate, and
the signal line is connected to the first electrode.

9. The photodetecting device according to claim 1 , wherein
the entire second electrode is exposed inside the through hole when viewed from the direction in which the first principal surface and the second principal surface oppose each other.

10. The photodetecting device according to claim 1 , wherein
the semiconductor photodetecting element is molded with resin and the through-hole is filled with the resin.

Assignees

• Hamamatsu Photonics Kk

Inventors

• Kamakura Shogo
• Yamada Ryuta
• Sato Kenichi

Classifications

• H10W90/754

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W90/734

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W72/5525

  comprising copper [Cu] · CPC title

• H10W72/5524

  comprising aluminium [Al] · CPC title

• H10W72/5522

  comprising gold [Au] · CPC title