Etching method, article manufacturing method, and etching apparatus

Patent metadata

Field	Value
Publication number	US-10224209-B2
Application number	US-201615217466-A
Country	US
Kind code	B2
Filing date	Jul 22, 2016
Priority date	Sep 1, 2015
Publication date	Mar 5, 2019
Grant date	Mar 5, 2019

Abstract

An etching method according to an embodiment includes supplying an etchant containing hydrofluoric acid, an oxidizer, and a buffer to a semiconductor substrate including a first region covered with a metal layer made of one or more metals other than noble metals, and a second region covered with a catalyst layer made of a noble metal, such that the etchant comes in contact with the catalyst layer and the metal layer, thereby etching the semiconductor substrate at a position of the catalyst layer.

First claim

What is claimed is:

1. An etching method comprising:
supplying an etchant containing hydrofluoric acid, an oxidizer, and a buffer to a semiconductor substrate including a first region covered with a metal layer made of one or more metals other than noble metals, and a second region covered with a catalyst layer made of a noble metal, such that the etchant comes in contact with the catalyst layer and the metal layer, thereby etching the semiconductor substrate at a position of the catalyst layer, wherein
the metal layer is made of at least one metal selected from the group consisting of aluminum, copper, and nickel, the buffer contains at least one of ammonium fluoride and ammonia, a pH of the etchant is 2.5 to 5,and
etching the semiconductor substrate at the position of the catalyst layer is performed such that the semiconductor substrate is singulated into semiconductor chips, and the metal layer is an electrode of the semiconductor chips.

2. The method according to claim 1 , wherein the oxidizer contains at least one of hydrogen peroxide, nitric acid, AgNO3, KAuCl4, HAuCl4, K2PtCl6, H2PtCl6, Fe(NO3)3, Ni(NO3)2, Mg(NO3)2, Na2S2O8, K2S2O8, KMnO4, and K2Cr2O7.

3. The method according to claim 1 , wherein the buffer contains ammonium fluoride.

4. The method according to claim 1 , wherein the metal layer is made of aluminum.

5. The method according to claim 1 , wherein the semiconductor substrate is made of a material containing silicon.

6. The method according to claim 1 , wherein the pH of the etchant is 3 to 5.

7. The method according to claim 1 , wherein a concentration of the oxidizer in the etchant is not less than 0.5 mol/L.

8. The method according to claim 1 , further comprising:
forming the metal layer that is the electrode of the semiconductor chips and is made of one or more metals other than noble metals; and
forming the catalyst layer made of the noble metal on the second region.

9. The method according to claim 1 , wherein the catalyst layer is an aggregate of a plurality of catalyst particles each made of a noble metal, and a proportion of a total area occupied by the catalyst particles on an upper surface of the catalyst layer to an area of a field of view in a scanning electron microscope (SEM) at a magnification of 10,000 to 100,000 is 50% to 90%.

Assignees

• Toshiba Kk

Inventors

• Matsuo Keiichiro
• Asano Yusaku

Classifications

• H10P72/0426

  with the semiconductor substrates being dipped in baths or vessels · CPC title

• H10P54/00

  Cutting or separating of wafers, substrates or parts of devices · CPC title

• H10P50/644

  Anisotropic liquid etching (H10P50/61 takes precedence) · CPC title

• H10P50/264

  by chemical means · CPC title

• H10P50/642 Primary

  Chemical etching · CPC title