Radio frequency extraction system for charge neutralized ion beam

Patent metadata

Field	Value
Publication number	US-10224181-B2
Application number	US-201615133261-A
Country	US
Kind code	B2
Filing date	Apr 20, 2016
Priority date	Apr 20, 2016
Publication date	Mar 5, 2019
Grant date	Mar 5, 2019

Abstract

A processing apparatus may include a plasma chamber to house a plasma and having a main body portion comprising an electrical insulator; an extraction plate disposed along an extraction side of the plasma chamber, the extraction plate being electrically conductive and having an extraction aperture; a substrate stage disposed outside of the plasma chamber and adjacent the extraction aperture, the substrate stage being at ground potential; and an RF generator electrically coupled to the extraction plate, the RF generator establishing a positive dc self-bias voltage at the extraction plate with respect to ground potential when the plasma is present in the plasma chamber.

First claim

What is claimed is:

1. A processing apparatus comprising:
a plasma chamber to house a plasma and having a main body portion comprising an electrical insulator;
an extraction plate disposed along an extraction side of the plasma chamber, the extraction plate being electrically conductive and having an extraction aperture;
a substrate stage disposed outside of the plasma chamber and adjacent the extraction aperture, the substrate stage being at ground potential; and
an RF generator electrically coupled to the extraction plate, the RF generator establishing a positive dc self-bias voltage at the extraction plate with respect to ground potential when the plasma is present in the plasma chamber, wherein the RF generator comprises a bias RF generator, the processing apparatus further comprising:
an RF antenna disposed adjacent the plasma chamber
an inductively coupled plasma (ICP) matching network directly coupled to the RF antenna;
an ICP RF generator coupled to the ICP matching network; and
a bias matching network electrically coupled between the bias RF generator and the extraction plate.

2. The processing apparatus of claim 1 , further comprising:
a ground plate disposed between the extraction plate and substrate stage, the ground plate comprising an electrically conductive material and being coupled to ground potential, the ground plate further comprising a ground plate aperture, wherein the extraction aperture and ground plate aperture provide a line of sight between the plasma and substrate stage.

3. The processing apparatus of claim 2 , wherein the extraction aperture comprises a first elongated aperture having a first long axis, wherein the ground plate aperture comprises a second elongated aperture having a second long axis aligned parallel to the first long axis, wherein the extraction aperture comprises a first height along a short axis perpendicular to the first long axis, and wherein the ground plate aperture comprises a second height along the short axis less than the first height.

4. The processing apparatus of claim 1 , wherein the substrate stage defines a substrate plane lying parallel to the extraction plate, wherein a separation between the substrate plane and the extraction plate is less than 1 cm.

5. The processing apparatus of claim 2 wherein the ground plate defines a ground plane lying parallel to the extraction plate, wherein a separation between the ground plane and the extraction plate is less than 1 cm.

6. The processing apparatus of claim 5 , wherein the substrate stage is movable along a direction perpendicular to the ground plane, wherein a second separation between the substrate stage and the extraction plane is greater than 1 cm.

7. The processing apparatus of claim 1 , the RF generator comprising a circuit generating an RF voltage signal at the extraction plate having a frequency of 2 MHz to 60 MHz, the RF voltage signal comprising a waveform having a positive portion and a negative portion, wherein electrons are extracted through the extraction aperture and directed to the substrate stage during the negative portion.

8. A processing apparatus comprising:
a plasma chamber to house a plasma and having a main body portion comprising an electrical insulator;
an extraction plate disposed along an extraction side of the plasma chamber, the extraction plate being electrically conductive and having an extraction aperture;
a substrate stage disposed outside of the plasma chamber and adjacent the extraction aperture, the substrate stage being at ground potential;
an RF generator electrically coupled to the extraction plate, the RF generator establishing a positive dc self-bias voltage at the extraction plate with respect to ground potential when the plasma is present in the plasma chamber, and
a ground plate disposed between the extraction plate and substrate stage, the ground plate comprising an electrically conductive material and being coupled to ground potential, wherein the ground plate and extraction plate comprise an asymmetric electrode configuration where rf biased conductive asymmetric surfaces are brought in contact with the plasma,
the ground plate further comprising a ground plate aperture, wherein the extraction aperture and ground plate aperture provide a line of sight between the plasma and substrate stage, wherein the extraction plate comprises a first area A 1 , wherein the extraction aperture comprises a second area A 2 , wherein the ground plate aperture comprises a third area A 3 , wherein A 1 /(A 2 −A 3 ) is 10 or greater.

9. The processing apparatus of claim 8 , wherein the extraction aperture comprises a first elongated aperture having a first long axis, wherein the ground plate aperture comprises a second elongated aperture having a second long axis aligned parallel to the first long axis, wherein the extraction aperture comprises a first height along a short axis perpendicular to the first long axis, and wherein the ground plate aperture comprises a second height along the short axis less than the first height.

10. The processing apparatus of claim 8 , wherein the substrate stage defines a substrate plane lying parallel to the extraction plate, wherein a separation between the substrate plane and the extraction plate is less than 1 cm.

11. The processing apparatus of claim 8 wherein the ground plate defines a ground plane lying parallel to the extraction plate, wherein a separation between the ground plane and the extraction plate is less than 1 cm.

12. The processing apparatus of claim 11 , wherein the substrate stage is movable along a direction perpendicular to the ground plane, wherein a second separation between the substrate stage and the extraction plane is greater than 1 cm.

13. The processing apparatus of claim 8 , the RF generator comprising a circuit generating an RF voltage signal at the extraction plate having a frequency of 2 MHz to 60 MHz, the RF voltage signal comprising a waveform having a positive portion and a negative portion, wherein electrons are extracted through the extraction aperture and directed to the substrate stage during the negative portion.

Assignees

• Varian Semiconductor Equipment Ass Inc

Inventors

• Biloiu Costel
• Lubicki Piotr
• Rockwell Tyler
• Campbell Christopher
• Singh Vikram
• Daniels Kevin M
• Hertel Richard J
• Kurunczi Peter F
• Likhanskii Alexandre

Classifications

• H01J37/32422

  Arrangement for selecting ions or species in the plasma · CPC title

• H01J37/3244 Primary

  Gas supply means · CPC title

• H01J37/321

  the radio frequency energy being inductively coupled to the plasma · CPC title

• H01J37/32412

  Plasma immersion ion implantation · CPC title

• H01J37/32082 Primary

  Radio frequency generated discharge (H01J37/32357, H01J37/32366, H01J37/32394 and H01J37/32403 take precedence) · CPC title