Negative-electrode active material, production process for the same and electric storage apparatus
US-2016006022-A1 · Jan 7, 2016 · US
US10217990B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10217990-B2 |
| Application number | US-201515314246-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 26, 2015 |
| Priority date | May 29, 2014 |
| Publication date | Feb 26, 2019 |
| Grant date | Feb 26, 2019 |
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A silicon material useful as a negative electrode active material is provided. The silicon material has an Si/O atom ratio within a range of greater than 1/0.5 and not greater than 1/0.1 and a band gap within a range of greater than 1.1 eV and not greater than 2.1 eV. A secondary battery in which this silicon material is used as a negative electrode active material has long life.
Opening claim text (preview).
The invention claimed is: 1. A silicon material having an Si/O atom ratio within a range of greater than 1/0.5 and not greater than 1/0.1 and a band gap within a range of greater than 1.1 eV and not greater than 2.1 eV, wherein the silicon material has a BET specific surface area of 3 to 100 m2/g. 2. The silicon material according to claim 1 , wherein the silicon material contains nano-sized silicon crystallites. 3. The silicon material according to claim 2 , wherein the silicon crystallites have a crystallite size of 0.5 nm to 300 nm. 4. The silicon material according to claim 2 , wherein the silicon material is complex particles further containing at least one of amorphous silicon, a silicon oxide (SiOx, 0 21 x<2), or a silicon compound. 5. The silicon material according to claim 4 , wherein the silicon crystallites are present on a surface of and/or within the at least one of the amorphous silicon, the silicon oxide (SiOx, 0<x<2), or the silicon compound. 6. The silicon material according to claim 4 , wherein the silicon crystallites are dispersed in an island state within a matrix mainly formed from amorphous silicon, or adhere to surfaces of particles mainly formed from amorphous silicon, in an island state. 7. The silicon material according to claim 1 , wherein a contained oxygen (O) amount in the silicon material is not greater than 20 mass %. 8. A negative electrode active material composed of the silicon material according to claim 1 . 9. A negative electrode containing the negative electrode active material according to claim 8 . 10. A secondary battery comprising the negative electrode according to claim 9 .
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