Semiconductor device having an internal-field-guarded active region

Patent metadata

Field	Value
Publication number	US-10217898-B2
Application number	US-201615757501-A
Country	US
Kind code	B2
Filing date	Sep 9, 2016
Priority date	Sep 10, 2015
Publication date	Feb 26, 2019
Grant date	Feb 26, 2019

Abstract

A semiconductor device comprises a layer sequence formed by a plurality of polar single crystalline semiconductor material layers that each have a crystal axis pointing in a direction of crystalline polarity and a stacking direction of the layer sequence. A core layer sequence is formed by an active region made of an active layer stack or a plurality of repetitions of the active layer stack. The active layer stack has an active layer having a first material composition associated with a first band gap energy, and carrier-confinement layers embedding the active layer on at least two opposite sides thereof, having a second material composition associated with a second band gap energy larger than the first band gap energy. A pair of polarization guard layers is arranged adjacent to the active region and embedding the active region on opposite sides thereof. Both polarization guard layers have the first material composition.

First claim

The invention claimed is:

1. A semiconductor device, comprising a layer sequence formed by a plurality of polar single crystalline semiconductor material layers that each have a crystal axis pointing in a direction that coincides with a direction of crystalline polarity and with a stacking direction of the layer sequence; wherein
the layer sequence is formed by a core layer sequence and shell layer sequences on opposite sides of the core layer sequence in the stacking direction; and wherein the core layer sequence is formed by
an active region made of an active layer stack or a plurality of repetitions of the active layer stack, the active layer stack being formed by an active layer having a first material composition that is associated with a first band gap energy, and by carrier-confinement layers embedding the active layer on at least two opposite sides thereof and having a second material composition that is associated with a second band gap energy larger than the first band gap energy, wherein the active layer and the carrier-confinement layers are configured to effect a quantum-confinement of charge carriers in the active layer in one, two or three spatial dimensions; and
a pair of polarization guard layers adjacent to the active region and embedding the active region on opposite sides thereof, both polarization guard layers having the first material composition.

2. The semiconductor device of claim 1 , wherein the second material composition and a thickness of the carrier-confinement layers are selected to allow a tunneling transport of the charge carriers between the polarization guard layers and the carrier-confinement layers under application of the operating voltage.

3. The semiconductor device of claim 1 , wherein the active layer has a thickness of at least two monolayers.

4. The semiconductor device of claim 1 , wherein the active layer has a thickness of less than 25 nanometer.

5. The semiconductor device of claim 1 , wherein a thickness of the polarization guard layers is at least one monolayer.

6. The semiconductor device of claim 1 , wherein a thickness of the polarization guard layers is suitable for fully shielding an electrical polarization field in the active layer.

7. The semiconductor device of claim 1 , wherein a thickness of the polarization guard layer on at least one of the opposite sides of the active region is either smaller or at most equal to a thickness of the active layer.

8. The semiconductor device of claim 1 , wherein the shell layer sequences each comprise a respective outer layer, each outer layer forming one of two opposite end faces of the layer sequence, which end faces interface with a dielectric or a contact material of metallic electrical conductivity, and wherein each of the outer layers has the first material composition.

9. The semiconductor device of claim 8 , wherein the shell layer sequence comprises a first outer layer forming a top cover layer or second outer layer forming a bottom carrier layer of the layer sequence, the first or second outer layer having a thickness of at least 20 nanometer and having the first material composition.

10. The semiconductor device of claim 9 , wherein the layer sequence bridges a gap region between bridge posts arranged on a carrier, the carrier layer of the layer sequence being exposed to an ambient atmosphere in the gap region between the bridge posts.

11. The semiconductor device of claim 1 , wherein at least one of the shell layer sequences comprises one or more intermediate layers made of a material not having the first material composition, wherein the one or more intermediate layers are embedded between two shell polarization guard layers having the first material composition.

12. The semiconductor device of claim 11 , wherein the layer sequence bridges a gap region between bridge posts arranged on a carrier, the carrier layer of the layer sequence being exposed to an ambient atmosphere in the gap region between the bridge posts.

13. The semiconductor device of claim 1 , wherein the layer sequence forms a sequence of epitaxial layers deposited on a carrier layer.

14. The semiconductor device of claim 1 , wherein the first material composition is GaN and the second material composition is AlN.

15. The semiconductor device of claim 1 , wherein the layer sequence forms a diode and the active region comprises a layer stack configured to emit light under application of an operating voltage to the layer sequence, which operating voltage is suitable for allowing an electric current across the diode.

16. The semiconductor device of claim 15 , wherein the layer sequence is configured as a photonic crystal comprising an array of holes extending through the layer sequence between the end faces.

Assignees

• Univ Berlin Tech

Inventors

• Pahn Gerald
• Callsen Gordon
• Hoffmann Axel

Classifications

• H10P14/3466

  Crystal orientation · CPC title

• H10P14/3416

  Nitrides · CPC title

• H10P14/2925

  Surface structures · CPC title

• B82Y20/00

  Nanooptics, e.g. quantum optics or photonic crystals · CPC title

• H01L33/16

  Electricity · mapped topic