Method of manufacturing semiconductor device

Patent metadata

Field	Value
Publication number	US-10217635-B2
Application number	US-201715411298-A
Country	US
Kind code	B2
Filing date	Jan 20, 2017
Priority date	Mar 25, 2016
Publication date	Feb 26, 2019
Grant date	Feb 26, 2019

Abstract

Provided is a method of manufacturing a semiconductor device. The method of manufacturing a semiconductor device includes forming a target etching layer on a substrate, patterning the target etching layer to form a pattern layer including a pattern portion having a first height and a first width and a recess portion having a second width, providing a first gas and a second gas on the pattern layer, and performing a reaction process including reacting the first and second gases with a surface of the pattern portion by irradiating a laser beam on the pattern layer. The performing the reaction process includes removing a portion of sidewalls of the pattern portion so that the pattern portion has a third width that is smaller than the first width.

First claim

What is claimed is:

1. A method of manufacturing a semiconductor device, the method comprising:
forming a target etching layer directly on a glass substrate;
patterning the target etching layer to form a pattern layer including a pattern portion having a first height and a first width and a recess portion having a second width;
providing a first gas and a second gas on the pattern layer; and
performing a reaction process including reacting the first and second gases with a surface of the pattern portion by irradiating a laser beam on the pattern layer,
wherein the performing the reaction process comprises:
removing a portion of sidewalls of the pattern portion so that the pattern portion has a third width that is smaller than the first width.

2. The method of claim 1 , wherein the irradiating the laser beam on the pattern layer comprises:
irradiating the laser beam having a width greater than the first width on the pattern portion.

3. The method of claim 1 , wherein the irradiating the laser beam on the pattern layer comprises:
irradiating the laser beam having a width equal to the second width on the recess portion.

4. The method of claim 3 , wherein the performing the reaction process comprises:
reacting the first and second gases with the sidewalls of the pattern portion.

5. The method of claim 1 , further comprising:
providing a third gas in the recess portion before providing the first gas and the second gas, wherein the third gas contributes to removing a portion of the pattern portion.

6. The method of claim 1 , wherein the substrate does not react with the first and second gases during the irradiating the laser beam on the pattern layer.

7. The method of claim 1 , wherein the first gas is a halogen compound gas, and the second gas is an oxygen gas.

8. The method of claim 1 , wherein the performing the reaction process comprises:
removing a portion of an upper portion of the pattern portion such that the pattern portion has a second height that is smaller than the first height.

9. The method of claim 8 , wherein a difference between the first height and the second height is at least 5 times greater than a difference between the first width and the third width.

10. The method of claim 1 , wherein the pattern layer includes a plurality of pattern portions each having the first height and the first width and a plurality of recess portions each having the second width,
the performing the reaction process comprises reacting the first and second gases with a surface of each pattern portion by irradiating a laser beam on the pattern layer, and
the performing the reaction process comprises removing a portion of sidewalls of each pattern portion so that each pattern portion has the third width that is smaller than the first width.

11. A method of manufacturing a semiconductor device, the method comprising:
forming a target etching layer on a substrate;
patterning the target etching layer to form a pattern layer including a plurality of pattern portions each having a first height and a first width and a plurality of recess portions each having a second width;
providing a third gas in each recess portion; then
providing a first as and a second gas on the pattern layer; and
performing a reaction process including reacting the first, second, and third gases with a surface of each pattern portion by irradiating a laser beam on the pattern layer,
wherein the performing the reaction process comprises:
removing a portion of sidewalls of each pattern portion so that each pattern portion has a third width that is smaller than the first width,
wherein the first gas is a halogen compound gas, the second gas is an oxygen gas, and the third gas is NO gas.

12. The method of claim 11 , wherein the third gas contributes to removing a portion of each pattern portion, and the same gas as the third gas is formed by the reaction process including reacting the first and second gases with the surface of each pattern portion.

13. The method of claim 11 , wherein the irradiating the laser beam on the pattern layer comprises:
irradiating the laser beam having a width greater than the first width on each pattern portion.

14. The method of claim 11 , wherein the irradiating the laser beam on the pattern layer comprises:
irradiating the laser beam having a width equal to the second width on each recess portion, and
wherein the performing the reaction process comprises:
reacting the first, second, and third gases with sidewalls of each pattern portion.

15. The method of claim 11 , wherein the substrate does not react with the first, second, and third gases during the irradiating the laser beam on the pattern layer.

16. The method of claim 11 , wherein the performing the reaction process comprises:
removing a portion of an upper portion of each pattern portion such that each pattern portion has a second height that is smaller than the first height, and
wherein a difference between the first height and the second height is at least 5 times greater than a difference between the first width and the third width.

17. A method of manufacturing a semiconductor device, the method comprising:
forming a photo mask layer directly on a light transmissive substrate;
patterning the photo mask layer to form a photo mask pattern layer including a plurality of pattern portions each having a first height and a first width and a plurality of recess portions each having a second width;
providing a first gas and a second gas on the photo mask pattern layer; and
generating a chemical reaction between the first and second gases and a surface of each pattern portion by irradiating a laser beam on the photo mask pattern layer to remove a portion of sidewalls of each pattern portion so that each pattern portion has a third width that is smaller than the first width.

18. The method of claim 17 , wherein the first gas is a halogen compound gas, and the second gas is an oxygen gas.

19. The method of claim 3 , further comprising increasing the width of the laser beam in accordance with an increase of the second width of the recess portion.

20. The method of claim 18 , further comprising:
providing a third gas on the photo mask pattern layer before providing the first gas and the second gas, wherein the third gas contributes to remove a portion of the sidewalls of each pattern portion,
wherein the third gas is NO gas.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Moon Yong Seung
• Kim Byung Gook
• Choi Jae Hyuck
• Kwon Sung Won

Classifications

• H10P52/00

  Grinding, lapping or polishing of wafers, substrates or parts of devices · CPC title

• H10P50/246

  of Group III-V materials · CPC title

• H10P14/3808

  using laser beams · CPC title

• H10P76/4085

  characterised by the processes involved to create the masks · CPC title

• H10P76/4083

  characterised by their behaviours during the lithography processes, e.g. soluble masks or redeposited masks · CPC title