Ion implantation apparatus and ion implantation method

Patent metadata

Field	Value
Publication number	US-10217607-B2
Application number	US-201715695857-A
Country	US
Kind code	B2
Filing date	Sep 5, 2017
Priority date	Sep 6, 2016
Publication date	Feb 26, 2019
Grant date	Feb 26, 2019

Abstract

An ion implantation apparatus includes a beam scanner that provides a reciprocating beam scan in a beam scan direction in accordance with a scan waveform, a mechanical scanner that causes a wafer to reciprocate in a mechanical scan direction, and a control device that controls the beam scanner and the mechanical scanner to realize a target two-dimensional dose amount distribution on a surface of the wafer. The control device includes a scan frequency adjusting unit that determines a frequency of the scan waveform in accordance with the target two-dimensional dose amount distribution, and a beam scanner driving unit that drives the beam scanner by using the scan waveform having the frequency determined by the scan frequency adjusting unit.

First claim

What is claimed is:

1. An ion implantation apparatus comprising:
a beam scanner that provides a reciprocating beam scan in a beam scan direction in accordance with a scan waveform;
a mechanical scanner that causes a wafer to reciprocate in a mechanical scan direction; and
a control device that controls the beam scanner and the mechanical scanner to realize a target two-dimensional dose amount distribution on a surface of the wafer,
wherein the control device includes
a scan frequency adjusting unit that determines a frequency of the scan waveform in accordance with the target two-dimensional dose amount distribution, and
a beam scanner driving unit that drives the beam scanner by using the scan waveform having the frequency determined by the scan frequency adjusting unit,

wherein an upper limit change rate that is an upper limit value of a change in time of the scan waveform available for driving is determined in the beam scanner driving unit, and
wherein the scan frequency adjusting unit determines the frequency of the scan waveform to be less than or equal to an upper limit scan frequency that is the frequency of the scan waveform in a case that a maximum change rate of the scan waveform for realizing the target two-dimensional dose amount distribution is adjusted to match the upper limit change rate.

2. The ion implantation apparatus according to claim 1 ,
wherein the scan frequency adjusting unit determines the frequency of the scan waveform to be greater than or equal to a lower limit scan frequency that is determined based on a relationship between an amount of damage induced to the wafer by beam irradiation and a frequency of the reciprocating beam scan.

3. The ion implantation apparatus according to claim 1 ,
wherein the scan frequency adjusting unit determines the frequency of the scan waveform to be greater than or equal to a lower limit scan frequency that is determined based on a relationship between a difference of a dose amount distribution realized on the wafer by beam irradiation from the target two-dimensional dose amount distribution and a frequency of the reciprocating beam scan.

4. The ion implantation apparatus according to claim 1 ,
wherein the control device further includes a target setting unit that sets, based on the target two-dimensional dose amount distribution, a plurality of target dose amount distributions which is a dose amount distribution in the beam scan direction and respectively corresponds to different positions in the mechanical scan direction, and
the beam scanner driving unit selects, in accordance with a position of the wafer in the mechanical scan direction, any of a plurality of scan waveforms that has the frequency determined by the scan frequency adjusting unit and respectively corresponds to the plurality of target dose amount distributions, and drives the beam scanner by using the selected scan waveform.

5. The ion implantation apparatus according to claim 4 ,
wherein
the scan frequency adjusting unit determines the frequency of the scan waveform in such a manner that each of maximum change rates of the plurality of scan waveforms does not exceed the upper limit change rate.

6. The ion implantation apparatus according to claim 5 ,
wherein the scan frequency adjusting unit determines the frequency of the scan waveform in such a manner that each of the plurality of scan waveforms has a common scan frequency.

7. The ion implantation apparatus according to claim 4 , further comprising:
a beam current measuring unit that measures a beam current intensity distribution in the beam scan direction downstream of the beam scanner,
wherein the control device further includes a scan waveform generating unit that generates, based on the measurement by the beam current measuring unit, a scan waveform for acquiring a desired beam current intensity distribution, and
the scan waveform generating unit generates, by using a measurement result of the beam current measuring unit, a reference scan waveform for acquiring a uniform beam current intensity distribution in the beam scan direction and generates a scan waveform for realizing the target dose amount distribution by performing a predetermined calculation process for the generated reference scan waveform.

8. The ion implantation apparatus according to claim 4 , further comprising:
a beam current measuring unit that measures a beam current intensity distribution in the beam scan direction downstream of the beam scanner,
wherein the control device further includes a scan waveform generating unit that generates, based on the measurement by the beam current measuring unit, a scan waveform for acquiring a desired beam current intensity distribution, and
the scan waveform generating unit generates a scan waveform for realizing the target dose amount distribution by adjusting the scan waveform in such a manner that the beam current intensity distribution measured by the beam current measuring unit fits the target dose amount distribution.

9. The ion implantation apparatus according to claim 8 ,
wherein at least one of the plurality of target dose amount distributions is a target non-uniform dose amount distribution that includes a first precise implantation region where a first target dose amount is set, a second precise implantation region which is adjacent to the first precise implantation region in the beam scan direction and where a second target dose amount is set, and a transitional implantation region set between the first precise implantation region and the second precise implantation region, and
the scan waveform generating unit generates the scan waveform in such a manner that the beam current intensity distribution measured by the beam current measuring unit fits the target non-uniform dose amount distribution except for the transitional implantation region.

10. The ion implantation apparatus according to claim 4 ,
wherein at least one of the plurality of scan waveforms is configured to have a different scan range in the beam scan direction from the other scan waveforms.

11. The ion implantation apparatus according to claim 4 ,
wherein at least one of the plurality of scan waveforms is configured to have a scan range in the beam scan direction that is narrower than an implantation region in which the wafer is positioned.

12. The ion implantation apparatus according to claim 8 ,
wherein the beam scanner is configured to provide the reciprocating beam scan across a range including an implantation region in which the wafer is positioned and a non-implantation region outside of the implantation region,
the ion implantation apparatus further includes a beam current monitoring unit that monitors an intensity of a beam current in the non-implantation region during implantation into the wafer, and
at least one of the plurality of scan waveforms is configured to include a scan range in the beam scan direction that includes the non-implantation region in order to enable monitoring of the intensity of the beam current during implantation into the wafer.

13. The ion implantation apparatus according to claim 12 ,
wherein each of the plurality of scan waveforms is configured to have the same scan range in the beam scan direction.

14. The ion implantation apparatus according to claim 12 ,
wherein the target two-dimensional dose amount distribution includes a region that is not to be an implantation target, and
at least one of the plurality of scan waveforms is configured not to have a scan range that includes the implantation region in the beam scan direction.

15. The ion implantation apparatus accord

Assignees

• Sumitomo Heavy Industries Ion Tech Co Ltd

Inventors

• Ishibashi Kazuhisa
• Ninomiya Shiro
• Ochi Akihiro
• Yumiyama Toshio

Classifications

• H10P30/20

  into semiconductor materials, e.g. for doping · CPC title

• H01J2237/31701

  Ion implantation · CPC title

• H01J2237/30455

  Correction during exposure · CPC title

• H01J37/3171 Primary

  for ion implantation · CPC title

• H01J37/304 Primary

  Controlling tubes by information coming from the objects {or from the beam}, e.g. correction signals · CPC title