Three level gate monitoring

Patent metadata

Field	Value
Publication number	US-10215795-B1
Application number	US-201815953146-A
Country	US
Kind code	B1
Filing date	Apr 13, 2018
Priority date	Apr 13, 2018
Publication date	Feb 26, 2019
Grant date	Feb 26, 2019

Abstract

A method of monitoring a gate of a transistor includes monitoring a gate voltage of the transistor; measuring a first time difference between when a gate control signal is asserted and when the gate voltage of the transistor crosses a first voltage threshold based on the monitoring; measuring a second time difference between when the gate voltage of the transistor crosses the first voltage threshold and when the gate voltage of the transistor crosses a second voltage threshold based on the monitoring; and determining whether the first time difference falls within a first time window, and whether the second time difference falls within a second time window.

First claim

What is claimed is:

1. A method of monitoring a gate of a transistor, the method comprising:
monitoring a gate voltage of the transistor;
measuring a first time difference between when a gate control signal is asserted and when the gate voltage of the transistor crosses a first voltage threshold based on the monitoring;
measuring a second time difference between when the gate voltage of the transistor crosses the first voltage threshold and when the gate voltage of the transistor crosses a second voltage threshold based on the monitoring; and
determining whether the first time difference falls within a first time window, and whether the second time difference falls within a second time window.

2. The method of claim 1 , further comprising asserting an error signal when the first time difference falls outside of the first time window or when the second time difference falls outside of the second time window.

3. The method of claim 2 , further comprising disabling a driver coupled to the gate of the transistor when the error signal is asserted.

4. The method of claim 1 , further comprising driving the gate of the transistor based on the gate control signal using a gate driver circuit.

5. The method of claim 4 , wherein the first time difference falling within the first time window and the second time difference falling within the second time window indicate that the gate driver circuit and the transistor are functioning without a fault.

6. The method of claim 1 , further comprising:
measuring a third time difference between when the gate control signal is de-asserted and when the gate voltage of the transistor crosses the second voltage threshold based on the monitoring;
measuring a fourth time difference between when the gate voltage of the transistor crosses the second voltage threshold and when the gate voltage of the transistor crosses the first voltage threshold based on the monitoring; and
determining whether the third time difference falls within a third time window, and whether the fourth time difference falls within a fourth time window.

7. The method of claim 1 , wherein monitoring the gate voltage of the transistor comprises:
comparing the gate voltage to the first voltage threshold using a first comparator; and
comparing the gate voltage to the second voltage threshold using a second comparator.

8. The method of claim 7 , wherein:
measuring the first time difference comprises activating a first shift register when the gate control signal is asserted, and deactivating the first shift register when an output of the first comparator is asserted;
determining whether the first time difference falls within the first time window comprises monitoring a state of the first shift register;
measuring the second time difference comprises activating a second shift register when the output of the first comparator is asserted, and deactivating the first shift register when an output of the second comparator is asserted; and
determining whether the second time difference falls within the first time window comprises monitoring a state of the second shift register.

9. The method of claim 7 , wherein:
measuring the first time difference comprises starting a first timer when the gate control signal is asserted, and stopping the first timer when an output of the first comparator is asserted; and
measuring the second time difference comprises starting a second timer when the gate control signal is asserted, stopping the second timer when an output of the second comparator is asserted, and subtracting the output of the first timer from an output of the second timer.

10. The method of claim 1 , wherein the first voltage threshold is 1.7 V and the second voltage threshold is 6.5V.

11. A circuit comprising:
a gate monitoring circuit having a first input configured to receive a gate voltage of a transistor, and a second input configured to receive a gate control signal, the gate monitoring circuit comprising:
a first comparator configured to compare the gate voltage of the transistor to a first voltage threshold;
a second comparator configured to compare the gate voltage of the transistor to a second voltage threshold; and
a timer circuit configured to
measure a first time difference between when a gate control signal is asserted and when an output of the first comparator is asserted,
measure a second time difference between when the output of the first comparator is asserted and an output of the second comparator is asserted,
determine whether the first time difference falls within a first time window, and whether the second time difference falls within a second time window, and
generate an error signal when the first time difference falls outside of the first time window or when the second time difference falls outside of the second time window.

12. The circuit of claim 11 , further comprising a gate driver circuit having an output coupled to the first input of the gate monitoring circuit, and an input coupled to the second input of the gate monitoring circuit.

13. The circuit of claim 12 , wherein the gate driver circuit is configured to be disabled when the error signal is asserted.

14. The circuit of claim 12 , further comprising a transistor having a gate coupled to the output of the gate driver circuit.

15. The circuit of claim 11 , wherein the timer circuit comprises:
a first shift register configured to be activated when the gate control signal is asserted and deactivated when the output of the first comparator is asserted, wherein whether the first time difference falls within a first time window is determined based on a state of the first shift register; and
a second shift register configured to be activated when the output of the first comparator is asserted and deactivated when an output of the second comparator is asserted, wherein whether the second time difference falls within a first time window is determined based on a state of the second shift register.

16. The circuit of claim 11 , wherein the timer circuit comprises:
a first timer configured to be activated when the gate control signal is asserted and deactivated when the output of the first comparator is asserted, wherein an output of the first timer is proportional to the first time difference;
a second timer configured to be activated when the gate control signal is asserted and deactivated when the output of the second comparator is asserted; and
a subtraction circuit having inputs coupled to the output of the first timer and the output of the second timer, wherein an output of the second timer is proportional to the second time difference.

17. A power control integrated circuit (IC) comprising:
a driver circuit having an output terminal configured to be electrically coupled to a control terminal of a power switch; and
a gate monitoring circuit electrically coupled to the output terminal of the driver circuit, the gate monitoring circuit comprising:
a first timer configured to measure a first time span, wherein the first time span is a duration between a first time instant the driver circuit is switched on or off to drive the power switch and a second time instant a control voltage at the output terminal of the driver circuit reaches a first pre-determined threshold;
a second timer configured to measure a second time span, wherein the second time span is a duration between the second time instant and a third time instant the control voltage reaches a second pre-determined threshold; and
a comparator configured to detect that the control voltage is above a third pre-determined t

Assignees

• Infineon Technologies Ag

Inventors

• Zannoth Markus
• Mejri Jaafar

Classifications

• H03K17/687

  the devices being field-effect transistors · CPC title

• G05B19/048

  Monitoring; Safety · CPC title

• H03K17/18

  Modifications for indicating state of switch · CPC title

• H03K2017/0806

  against excessive temperature · CPC title

• H02M1/32

  Means for protecting converters other than automatic disconnection · CPC title