Additively manufactured gas distribution manifold

Patent metadata

Field	Value
Publication number	US-10215317-B2
Application number	US-201615087889-A
Country	US
Kind code	B2
Filing date	Mar 31, 2016
Priority date	Jan 15, 2016
Publication date	Feb 26, 2019
Grant date	Feb 26, 2019

Abstract

Methods and apparatuses for additively manufactured tubular passages, additively manufactured manifolds, and additively manufactured heaters are provided.

First claim

What is claimed is:

1. An apparatus for use with a semiconductor processing chamber, the apparatus comprising:
a manifold constructed by additive manufacturing and including:
a mixing chamber, and
portions of a plurality of flow paths, each flow path including:
a first fluid flow component interface including a first fluid flow component interface inlet and a first fluid flow component interface outlet,
a first tubular passage fluidically connecting the first mixing chamber with the first fluid flow component interface outlet of that flow path, and
a second tubular passage fluidically connected to the first fluid flow component interface inlet of that flow path, wherein:
the first fluid flow component interface, the first tubular passage, and the second tubular passage of each flow path are a unitary body,
one or more of the first tubular passage and the second tubular passage for at least one of the flow paths follows a respective pathway and has an exterior surface that includes a first runway,
the pathway is a three-dimensional path, and
for each runway:
 that first runway includes a surface defined by a respective first profile that is swept along the respective pathway,
 the respective first profile is in a plane perpendicular to the respective pathway, and
 the respective first profile is substantially linear.

2. The apparatus of claim 1 , wherein the first profile is slightly curved so as to make the first runway concave.

3. The apparatus of claim 1 , wherein the first profile includes features that define opposing sidewalls along the length of the runway to form a trough.

4. The apparatus of claim 1 , wherein:
the exterior surface of the at least one tubular passage includes a second runway,
the second runway includes a surface defined by a second profile that is swept along the pathway,
the second profile is in a plane perpendicular to the pathway, and
the second profile is substantially linear.

5. The apparatus of claim 4 , wherein the second profile is at an oblique angle to the first profile when viewed normal to the plane perpendicular to the pathway.

6. The apparatus of claim 4 , wherein the second profile is substantially parallel to the first profile when viewed normal to the plane perpendicular to the pathway.

7. The apparatus of claim 4 , wherein the second profile is perpendicular to the first profile when viewed normal to the plane perpendicular to the pathway.

8. The apparatus of claim 1 , wherein the at least one tubular passage further includes a first dielectric layer that is adjacent to the first runway and extends along the first runway for substantially the entire length of the first runway.

9. The apparatus of claim 8 , wherein the at least one tubular passage further includes a resistive heating element layer that is adjacent to the first dielectric layer and extends along the first dielectric layer for substantially the entire length of the first dielectric layer.

10. The apparatus of claim 9 , wherein:
the at least one tubular passage further includes a second dielectric layer that is adjacent to the resistive heating element layer and extends along the first runway for substantially the entire length of the first runway, and
the resistive heating element layer is interposed between the first dielectric layer and the second dielectric layer.

11. The apparatus of claim 9 , wherein:
the resistive heating element layer includes a first heating zone that is configured to heat the tubular passage to a first temperature, and
the resistive heating element layer includes a second heating zone that is configured to heat the tubular passage to a second temperature that is different than the first temperature.

12. The apparatus of claim 1 , wherein:
the at least one flow path further comprises a heating element, and
the heating element is positioned on the first runway of one or more of the first tubular passage and the second tubular passage, and
the heating element extends along the respective pathway of one or more of the first tubular passage and the second tubular passage.

13. The apparatus of claim 12 , wherein:
the heating element is positioned on the first runway of both the first tubular passage and the second tubular passage, and
the heating element extends along the respective pathway of both the first tubular passage and the second tubular passage.

14. The apparatus of claim 12 , wherein:
each flow path of the plurality of flow paths follows a respective pathway, and has an exterior surface that includes a first runway,
each flow path of the plurality of flow paths includes a heating element,
for each flow path, the heating element is positioned on the first runway of one or more of the first tubular passage and the second tubular passage of that flow path, and
for each flow path, the heating element extends along the respective pathway of one or more of the first tubular passage and the second tubular passage of that flow path.

15. The apparatus of claim 14 , wherein:
for each flow path, the heating element is positioned on the first runway of both the first tubular passage and the second tubular passage of that flow path, and
for each flow path, the heating element extends along the respective pathway of both the first tubular passage and the second tubular passage of that flow path.

16. An apparatus for use with a semiconductor processing chamber, the apparatus comprising:
a manifold constructed by additive manufacturing and including:
a mixing chamber,
a resistive heating element layer, and
portions of a plurality of flow paths, each flow path including:
a first fluid flow component interface including a first fluid flow component interface inlet and a first fluid flow component interface outlet,
a first tubular passage fluidically connecting the first mixing chamber with the first fluid flow component interface outlet of that flow path, and
a second tubular passage fluidically connected to the first fluid flow component interface inlet of that flow path, wherein:
the first fluid flow component interface, the first tubular passage, and the second tubular passage of each flow path are a unitary body,
one or more of the first tubular passage and the second tubular passage for at least one of the flow paths follows a respective pathway, and
for the at least one flow path that follows a respective pathway, the resistive heating element layer is positioned on one or more of the first tubular passage and the second tubular passage, and extends along the respective pathway of one or more of the first tubular passage and the second tubular passage.

17. The apparatus of claim 16 , wherein for the at least one flow path that follows the respective pathway:
the one or more of the first tubular passage and the second tubular passage on which the resistive heating element is positioned further includes a first dielectric layer,
the first dielectric layer is positioned on and extends along the one or more of the first tubular passage and the second tubular passage on which the resistive heating element layer is positioned, and
the first dielectric layer is interposed between the resistive heating element layer and the one or more of the first tubular passage and the second tubular passage on which the resistive heating element layer is positioned.

18. The apparatus of claim 17 , wherein for the at least one flow path that follows the respective pathway:
the one or more of the first tubular passage and the second tubular passage on which the resistive heating

Assignees

• Lam Res Corp

Inventors

• Burkhart Christopher William
• Lee Andrew C
• Hemker David J

Classifications

• H10P72/0462

  characterised by the construction of the processing chambers, e.g. modular processing chambers · CPC title

• H10P72/0402

  Apparatus for fluid treatment (H10P72/0441, H10P72/0448 take precedence) · CPC title

• Y10T137/87676

  With flow control · CPC title

• H01J37/32449

  Gas control, e.g. control of the gas flow · CPC title

• H01J37/3244

  Gas supply means · CPC title