Electric connection and method of manufacturing the same

Patent metadata

Field	Value
Publication number	US-10213986-B2
Application number	US-201514930768-A
Country	US
Kind code	B2
Filing date	Nov 3, 2015
Priority date	Nov 3, 2014
Publication date	Feb 26, 2019
Grant date	Feb 26, 2019

Abstract

An electric connection is provided, and has a first copper (Cu) layer, a second Cu layer, and a composite metal layer disposed between the first Cu layer and the second Cu layer. The composite metal layer has 0.01 wt. %≤gallium (Ga)≤20 wt. %, 0.01 wt. %≤copper (Cu)≤50 wt. %, and 30 wt. %≤nickel (Ni)≤99.98 wt. %. Moreover, a method of manufacturing the electric connection is provided, and has the steps of: (1) providing a first Cu layer and a second Cu layer; (2) forming a first Ni layer on the first Cu layer; (3) forming a second Ni layer on the second Cu layer; (4) forming a Ga layer on the first Ni layer; and (5) keeping the second Ni layer in contact with the Ga layer and carrying out a thermo-compress bonding therebetween to form the electric connection.

First claim

What is claimed is:

1. An electric connection, comprising:
a first Cu layer;
a second Cu layer; and
a composite metal layer disposed between the first Cu layer and the second Cu layer, wherein the first Cu layer and the second Cu layer are connected with the composite metal layer,
wherein the composite metal layer consists essentially of:
0.01 wt. %≤Ga≤20 wt. %; 0.01 wt. %≤Cu≤50 wt. %; and 30 wt. %≤Ni≤99.98 wt. %, and
wherein the composite metal layer comprises no intermetallic compound, and the composite metal layer has a face-centered cubic crystal structure.

2. The electric connection according to claim 1 , wherein the composite metal layer comprises 0.01 wt. % to 10 wt. % of Ga, 0.01 wt. % to 10 wt. % of Cu, and 80 wt. % to 99.98 wt. % of Ni.

Assignees

• Univ Nat Cheng Kung

Inventors

• Lin Shih-Kang
• Chang Hao-Miao
• Wang mei-jun
• Cho Cheng-Liang
• Yeh Che-Yu

Classifications

• H10W20/40

  Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes · CPC title

• H10W20/20

  Interconnections within wafers or substrates, e.g. through-silicon vias [TSV] · CPC title

• H10W72/073

  of die-attach connectors · CPC title

• H10W72/30 Primary

  Die-attach connectors · CPC title

• H01B1/026

  Alloys based on copper · CPC title