Imaging element, solid-state imaging device, and electronic device having first and second buffer layers

Patent metadata

Field	Value
Publication number	US-10211145-B2
Application number	US-201515509282-A
Country	US
Kind code	B2
Filing date	Jun 16, 2015
Priority date	Sep 16, 2014
Publication date	Feb 19, 2019
Grant date	Feb 19, 2019

Abstract

An imaging element includes a layered structural body formed of a first electrode, a light receiving layer formed on the first electrode, and a second electrode formed on the light receiving layer, and a single first buffer layer formed of an amorphous organic material and a single second buffer layer formed of an amorphous inorganic material are provided between the light receiving layer and the second electrode from the light receiving layer side.

First claim

What is claimed is:

1. An imaging element comprising a layered structural body formed of: a first electrode; a light receiving layer formed on the first electrode; and a second electrode formed on the light receiving layer,
wherein a single first buffer layer formed of an amorphous organic material and a single second buffer layer formed of an amorphous inorganic material are provided between the light receiving layer and the second electrode from the light receiving layer side, and wherein a refraction index of the second electrode and a refraction index of the second buffer layer are 1.9 to 2.2.

2. The imaging element according to claim 1 , wherein the second buffer layer is formed of a metal oxide or an oxide semiconductor.

3. The imaging element according to claim 2 , wherein the second buffer layer is formed of at least two kinds of materials selected from a group consisting of a zinc oxide, a silicon oxide, a tin oxide, a niobium oxide, a titanium oxide, a molybdenum oxide, an aluminum oxide, an indium-doped gallium zinc oxide, a magnesium oxide, and a hafnium oxide.

4. The imaging element according to claim 3 , wherein the second buffer layer is formed of a zinc oxide, an aluminum oxide, and a magnesium oxide, or a zinc oxide, an aluminum oxide, and a silicon oxide.

5. The imaging element according to claim 1 , wherein the second buffer layer has a thickness of 3×10 −9 m to 3×10 −7 m.

6. The imaging element according to claim 1 , wherein the second buffer layer has a sheet resistance value of 1×10 5 Ω/□ or more.

7. The imaging element according to claim 1 , wherein the first buffer layer is formed of phenanthroline and a derivative thereof or anthracene and a derivative thereof.

8. The imaging element according to claim 1 , wherein the first buffer layer has a thickness of 3×10 −9 m to 3×10 −7 m.

9. The imaging element according to claim 1 , wherein the second electrode is formed of an amorphous oxide that is transparent and has conductivity.

10. The imaging element according to claim 1 , wherein the second electrode is formed of a material obtained by adding or doping at least one kind of material selected from a group consisting of aluminum, gallium, tin, and indium to one kind of material selected from a group consisting of an indium oxide, a tin oxide, and a zinc oxide.

11. The imaging element according to claim 10 , wherein a work function value of the second electrode has a work function of 4.5 eV or less.

12. The imaging element according to claim 1 , wherein the second electrode has a thickness of 1×10 −8 m to 1.5×10 − m.

13. The imaging element according to claim 12 , wherein the second electrode has a thickness of 2×10 −8 m to 1×10 −7 m.

14. The imaging element according to claim 1 , wherein the second electrode has surface roughnesses Ra of 1.5 nm or less and Rq of 2.5 nm or less.

15. The imaging element according to claim 1 , wherein the second electrode has an electric resistance value of 1×10 −6 Ω·cm or less.

16. The imaging element according to claim 1 , wherein internal compressive stress of a layered structural object formed of the first buffer layer, the second buffer layer, and the second electrode is 10 MPa to 80 MPa.

17. The imaging element according to claim 1 , wherein transparency of the second buffer layer is controlled by controlling oxygen gas partial pressure at the time of forming the second buffer layer on the basis of a sputtering method.

18. A solid-state imaging device comprising a plurality of imaging elements, wherein
each of the imaging elements has a layered structural body formed of: a first electrode; a light receiving layer formed on the first electrode; and a second electrode formed on the light receiving layer, and
a single first buffer layer formed of an amorphous organic material and a single second buffer layer formed of an amorphous inorganic material are provided between the light receiving layer and the second electrode from the light receiving layer side, and
wherein a refraction index of the second electrode and a refraction index of the second buffer layer are 1.9 to 2.2.

19. An electronic device comprising: a light emitting/light receiving layer; a first electrode electrically connected to the light emitting/light receiving layer; and a second electrode formed on the light emitting/light receiving layer and formed of a transparent conductive material,
wherein a single first buffer layer formed of an amorphous organic material and a single second buffer layer formed of an amorphous inorganic material are provided between the light emitting/light receiving layer and the second electrode from the light emitting/light receiving layer side, and wherein a refraction index of the second electrode and a refraction index of the second buffer layer are 1.9 to 2.2.

Assignees

• Sony Corp

Inventors

• Moriwaki Toshiki

Classifications

• H10P14/40

  of conductive or resistive materials · CPC title

• H10W20/40 Primary

  Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes · CPC title

• H04N25/76

  Addressed sensors, e.g. MOS or CMOS sensors · CPC title

• H04N5/374

  Electricity · mapped topic

• H01L27/14

  Electricity · mapped topic